IXFT14N100 Equivalent & Substitute Parts

Part Overview

The IXFT14N100 is an N-Channel 1000 V, 14 A (Tc) MOSFET manufactured by IXYS in the HiPerFET™ series, housed in a TO-268AA surface mount package. This device is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design requirements and production continuity. The part delivers 360 W maximum power dissipation and operates across a temperature range of -55°C to 150°C (TJ).

Substiute Parts

IXFT14N100

IXYSIn Stock: 831IXFT14N100 Datasheet

Current PartRFQ

IXFT15N100Q3

IXYSIn Stock: 1231IXFT15N100Q3 Datasheet

DirectRFQ

APT10078SLLG

Microchip TechnologyIn Stock: 1164APT10078SLLG Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFT14N100 is determined by strict alignment of the following critical electrical and mechanical parameters:

Mandatory Matching Parameters:

• Drain to Source Voltage (Vdss): 1000 V
• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
• Mounting Type: Surface Mount
• Operating Temperature Range: -55°C to 150°C (TJ)

Allowable Variation Parameters:

• Current - Continuous Drain (Id) @ 25°C: Equal to or greater than 14 A (Tc)
• Power Dissipation (Max): Equal to or greater than 360 W (Tc)
• Rds On (Max) @ Id, Vgs: Equal to or less than 750 mOhm (lower on-resistance is acceptable)

Two substitute parts meet these criteria: the IXFT15N100Q3 (direct manufacturer upgrade within the same IXYS HiPerFET™ series) and the APT10078SLLG (equivalent from Microchip Technology in the POWER MOS 7® series).

Parameter Comparison

Engineering Selection Recommendations

IXFT15N100Q3 (Direct Manufacturer Substitute)

The IXFT15N100Q3 is the primary substitute for the obsolete IXFT14N100. Both devices are manufactured by IXYS within the HiPerFET™ series and share identical voltage and package specifications. The IXFT15N100Q3 provides enhanced performance with 15 A continuous drain current (versus 14 A) and 690 W maximum power dissipation (versus 360 W). The device is classified as Active and carries ROHS3 compliance certification. The Q3 Class designation indicates qualification to higher reliability standards. Gate charge is reduced to 64 nC (from 220 nC), and input capacitance is lower at 3250 pF (from 4500 pF), resulting in improved switching characteristics. Vgs (Max) is increased to ±30 V (from ±20 V), providing greater gate drive margin.

APT10078SLLG (Cross-Manufacturer Equivalent)

The APT10078SLLG, manufactured by Microchip Technology in the POWER MOS 7® series, provides an equivalent alternative with matching 1000 V Vdss and 14 A continuous drain current. The device is Active and ROHS3 compliant. On-resistance is 780 mOhm (comparable to the original 750 mOhm specification), and power dissipation is 403 W (exceeding the 360 W requirement). Gate charge is significantly lower at 95 nC, and input capacitance is reduced to 2525 pF, offering improved switching performance. Vgs (Max) is ±30 V. This part is suitable for applications requiring cross-manufacturer qualification or where IXYS supply is constrained.

Both substitute parts are Active products with current manufacturing support and regulatory compliance, eliminating obsolescence risk associated with the IXFT14N100.

Frequently Asked Questions (FAQ)

Q: Can the IXFT15N100Q3 directly replace the IXFT14N100 in existing designs?

A: Yes. Both devices share identical Vdss (1000 V), package (TO-268AA), and operating temperature range (-55°C to 150°C). The IXFT15N100Q3 provides equal or superior electrical performance across all critical parameters. No PCB layout modifications are required.

Q: What are the key differences between the IXFT15N100Q3 and APT10078SLLG?

A: Both are functionally equivalent at the 1000 V, 14-15 A rating. The IXFT15N100Q3 is from IXYS (same manufacturer as the original part) and offers higher power dissipation (690 W). The APT10078SLLG is from Microchip Technology and provides comparable performance with lower gate charge (95 nC versus 64 nC). Selection depends on supply chain preference and manufacturer qualification requirements.

Q: Are there any thermal or electrical performance trade-offs when substituting?

A: No trade-offs exist. Both substitute parts meet or exceed the original IXFT14N100 specifications. The IXFT15N100Q3 provides significantly higher power dissipation capability (690 W versus 360 W), allowing for improved thermal margin in power-limited applications. The APT10078SLLG maintains equivalent thermal performance (403 W) while offering lower switching losses due to reduced gate charge.

Q: Is the TO-268AA package identical across all three parts?

A: Yes. All three devices use the TO-268-3, D³Pak (2 Leads + Tab), TO-268AA package. Pin configuration, lead spacing, and thermal pad dimensions are identical. Direct PCB substitution is possible without layout changes.

Q: What is the significance of the Q3 Class designation on the IXFT15N100Q3?

A: The Q3 Class indicates qualification to enhanced reliability and quality standards within the IXYS HiPerFET™ series. This classification provides assurance of tighter manufacturing tolerances and higher reliability margins compared to standard-grade devices.

Q: Are both substitute parts RoHS compliant?

A: Yes. Both the IXFT15N100Q3 and APT10078SLLG carry ROHS3 compliance certification. The original IXFT14N100 does not specify RoHS status. Substitution with either part ensures compliance with current environmental regulations.

Q: What is the Moisture Sensitivity Level (MSL) for all three parts?

A: All three devices are rated MSL 1 (Unlimited), indicating no moisture sensitivity restrictions. Standard handling and storage procedures apply without special desiccant or humidity control requirements.

Q: Can the APT10078SLLG be used in applications originally designed for IXYS devices?

A: Yes. The APT10078SLLG meets all electrical and mechanical substitution criteria. Cross-manufacturer qualification may be required depending on application criticality and existing design documentation. Electrical performance is equivalent or superior across all specified parameters.