IXFT12N100Q Equivalent & Substitute Parts

Part Overview

The IXFT12N100Q is an N-Channel MOSFET rated for 1000V drain-to-source voltage with 12A continuous drain current at 25°C. Manufactured by IXYS as part of the HiPerFET™ series, this device is housed in a TO-268AA surface mount package and rated for 300W maximum power dissipation. The part is currently classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	1000	V
Continuous Drain Current (Id) @ 25°C	12	A (Tc)
Power Dissipation (Max)	300	W (Tc)
Rds On (Max) @ Id, Vgs	1.05	Ohm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs	90	nC @ 10V
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-268AA	Surface Mount
Vgs (Max)	±20	V

Substitute Part Grouping Explanation

Substitution of the IXFT12N100Q is based on electrical and mechanical parameter compatibility within the IXYS HiPerFET™ MOSFET family. The primary substitute, IXFT15N100Q3, maintains identical voltage ratings (1000V Vdss) and package configuration (TO-268AA surface mount). Both devices operate across the same temperature range (-55°C to 150°C). The substitute part is selected based on the following criteria:

Key Substitution Parameters:

Drain-to-Source Voltage (Vdss): 1000V (identical)
Package Type: TO-268AA (identical)
Mounting Type: Surface Mount (identical)
Operating Temperature Range: -55°C to 150°C (identical)
FET Technology: N-Channel MOSFET (identical)
Gate Drive Voltage: 10V (identical)

The IXFT15N100Q3 provides higher current capability (15A vs. 12A) and increased power dissipation rating (690W vs. 300W), making it suitable for applications requiring equal or greater performance margins.

Parameter Comparison

Parameter	IXFT12N100Q	IXFT15N100Q3	Unit
Drain to Source Voltage (Vdss)	1000	1000	V
Continuous Drain Current (Id) @ 25°C	12	15	A (Tc)
Power Dissipation (Max)	300	690	W (Tc)
Rds On (Max) @ Vgs 10V	1.05 @ 6A	1.05 @ 7.5A	Ohm
Gate Charge (Qg) (Max) @ 10V	90	64	nC
Vgs (Max)	±20	±30	V
Input Capacitance (Ciss) (Max) @ 25V	2900	3250	pF
Operating Temperature Range	-55 to 150	-55 to 150	°C (TJ)
Package Type	TO-268AA	TO-268AA	Surface Mount
Series	HiPerFET™	HiPerFET™ Q3 Class	-
Product Status	Obsolete	Active	-

Engineering Selection Recommendations

The IXFT15N100Q3 is the designated substitute for the obsolete IXFT12N100Q. Selection of this alternative is supported by the following factors:

Product Status: The IXFT15N100Q3 maintains active product status with IXYS, ensuring continued availability and manufacturing support. The original IXFT12N100Q is classified as obsolete, making the substitute necessary for new procurement and long-term design continuity.

Compliance and Certifications: The IXFT15N100Q3 is RoHS3 compliant, whereas the IXFT12N100Q does not specify RoHS compliance. Both devices are REACH unaffected and carry identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications, confirming regulatory equivalence for export and trade purposes.

Electrical Compatibility: Both devices share identical voltage ratings (1000V Vdss), gate drive voltage (10V), and operating temperature range (-55°C to 150°C). The substitute provides enhanced performance through higher continuous drain current (15A vs. 12A) and superior power dissipation capability (690W vs. 300W), enabling direct replacement in existing circuit topologies without derating.

Package Compatibility: Both parts utilize the TO-268AA surface mount package (D³Pak with 2 leads plus tab), ensuring mechanical and thermal interface compatibility with existing PCB layouts and thermal management solutions.

Frequently Asked Questions (FAQ)

Q: Can the IXFT15N100Q3 directly replace the IXFT12N100Q in existing designs?

A: Yes. Both devices share identical voltage ratings (1000V Vdss), package configuration (TO-268AA), and operating temperature range (-55°C to 150°C). The substitute provides higher current and power dissipation ratings, making it suitable for direct substitution without circuit modification.

Q: What are the key differences between these two MOSFETs?

A: The IXFT15N100Q3 provides higher continuous drain current (15A vs. 12A), increased power dissipation (690W vs. 300W), lower gate charge (64 nC vs. 90 nC), and higher maximum gate voltage (±30V vs. ±20V). The substitute also carries active product status and RoHS3 compliance, whereas the original is obsolete.

Q: Are the thermal characteristics compatible?

A: Yes. Both devices operate across the same temperature range (-55°C to 150°C junction temperature) and utilize identical TO-268AA surface mount packaging, which provides equivalent thermal interface characteristics. The IXFT15N100Q3 offers superior thermal performance due to higher power dissipation rating.

Q: Does the lower gate charge of the IXFT15N100Q3 affect circuit performance?

A: The lower gate charge (64 nC vs. 90 nC) of the substitute results in faster switching transitions and reduced gate drive power requirements. This represents an improvement over the original design and does not introduce compatibility issues.

Q: Are there any compliance or regulatory differences?

A: The IXFT15N100Q3 is RoHS3 compliant, providing enhanced environmental compliance. Both devices are REACH unaffected and carry identical export classifications (ECCN EAR99, HTSUS 8541.29.0095), confirming regulatory equivalence.

Q: What is the moisture sensitivity level for both parts?

A: Both the IXFT12N100Q and IXFT15N100Q3 carry MSL 1 (Unlimited) classification, indicating no moisture sensitivity restrictions for storage, handling, or assembly processes.

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