IXFT12N100F Equivalent & Substitute Parts

Part Overview

The IXFT12N100F is an N-Channel MOSFET rated for 1000V drain-to-source voltage with 12A continuous drain current at 25°C. Manufactured by IXYS, this device is housed in a TO-268 surface mount package and is part of the HiPerRF™ series. The part is currently classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design requirements and production continuity.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	1000	V
Continuous Drain Current (Id) @ 25°C	12	A
Rds On (Max) @ Id, Vgs	1.05 @ 6A, 10V	Ohm
Gate Threshold Voltage (Vgs(th)) (Max)	5.5 @ 4mA	V
Power Dissipation (Max)	300	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Surface Mount	—
Package	TO-268-3, D³Pak	—

Substitute Part Grouping Explanation

Substitution of the IXFT12N100F is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

Drain to Source Voltage (Vdss): Must equal or exceed 1000V
Continuous Drain Current (Id): Must meet or exceed 12A at 25°C
Gate Threshold Voltage (Vgs(th)): Must be compatible with existing gate drive circuits
On-State Resistance (Rds On): Lower values indicate improved performance; higher values require thermal evaluation
Power Dissipation: Must accommodate thermal requirements of the application
Operating Temperature Range: Must span -55°C to 150°C

Mechanical Compatibility Criteria:

Mounting Type: Surface Mount or Through Hole (application-dependent)
Package Type: TO-268 variants or equivalent footprints

The substitute parts identified maintain the 1000V voltage rating and N-Channel MOSFET technology. Variations in current rating, on-state resistance, and power dissipation reflect different device generations and manufacturing series within the high-voltage MOSFET category.

Parameter Comparison

Parameter	IXFT12N100F	IXFT15N100Q3	STW11NK100Z
Manufacturer	IXYS	IXYS	STMicroelectronics
FET Type	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000 V	1000 V	1000 V
Continuous Drain Current (Id) @ 25°C	12 A	15 A	8.3 A
Rds On (Max) @ Id, Vgs	1.05 Ω @ 6A, 10V	1.05 Ω @ 7.5A, 10V	1.38 Ω @ 4.15A, 10V
Gate Threshold Voltage (Vgs(th)) (Max)	5.5 V @ 4mA	6.5 V @ 4mA	4.5 V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	77 nC @ 10V	64 nC @ 10V	162 nC @ 10V
Vgs (Max)	±20 V	±30 V	±30 V
Input Capacitance (Ciss) (Max) @ Vds	2700 pF @ 25V	3250 pF @ 25V	3500 pF @ 25V
Power Dissipation (Max)	300 W	690 W	230 W
Operating Temperature Range	-55 to 150 °C	-55 to 150 °C	-55 to 150 °C
Mounting Type	Surface Mount	Surface Mount	Through Hole
Package / Case	TO-268-3, D³Pak	TO-268AA	TO-247-3
Product Status	Obsolete	Active	Active
RoHS Status	—	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

IXFT15N100Q3 (IXYS)

The IXFT15N100Q3 is the primary equivalent substitute for the IXFT12N100F. Both devices are manufactured by IXYS and share identical voltage ratings (1000V Vdss) and on-state resistance characteristics (1.05Ω). The IXFT15N100Q3 provides higher continuous drain current (15A versus 12A) and superior power dissipation capability (690W versus 300W), enabling operation in higher-current applications. The device maintains surface mount packaging in the TO-268AA variant and is classified as Active with ROHS3 compliance and REACH unaffected status. The increased gate charge (64nC versus 77nC) and higher maximum gate voltage (±30V versus ±20V) provide enhanced design flexibility.

STW11NK100Z (STMicroelectronics)

The STW11NK100Z is an alternative substitute manufactured by STMicroelectronics using SuperMESH™ technology. This device maintains the 1000V voltage rating but operates at a lower continuous drain current (8.3A versus 12A) and reduced power dissipation (230W versus 300W). The primary distinction is the through-hole TO-247-3 package, which differs from the surface mount TO-268 packaging of the original part. The STW11NK100Z exhibits higher on-state resistance (1.38Ω versus 1.05Ω) and significantly higher gate charge (162nC versus 77nC). This device is classified as Active with ROHS3 compliance and REACH unaffected status.

Selection Basis:

IXFT15N100Q3 is recommended for direct replacement in applications requiring surface mount packaging and equivalent or higher current ratings.
STW11NK100Z is suitable for applications where through-hole mounting is acceptable and lower current requirements are present.
Both substitute parts are Active products with current compliance certifications, ensuring long-term availability and regulatory adherence.

Frequently Asked Questions (FAQ)

Q: Can the IXFT15N100Q3 directly replace the IXFT12N100F in existing PCB designs?

A: The IXFT15N100Q3 is compatible with designs using the IXFT12N100F provided the PCB footprint accommodates the TO-268AA package variant. Both devices use surface mount TO-268 packaging with identical pin configurations. Electrical parameters are compatible, with the IXFT15N100Q3 offering higher current and power dissipation ratings.

Q: What are the implications of the higher gate charge in the STW11NK100Z?

A: The STW11NK100Z exhibits gate charge of 162nC at 10V, compared to 77nC for the IXFT12N100F. Higher gate charge requires increased energy from the gate drive circuit during switching transitions, potentially affecting switching frequency and efficiency. Gate drive circuit design must accommodate this parameter.

Q: Is the STW11NK100Z suitable for applications currently using the IXFT12N100F?

A: The STW11NK100Z is suitable only for applications where the continuous drain current requirement does not exceed 8.3A. The device's lower current rating (8.3A versus 12A) and higher on-state resistance (1.38Ω versus 1.05Ω) result in increased power dissipation at equivalent current levels. Additionally, the through-hole TO-247-3 package differs from the surface mount TO-268 packaging of the original part, requiring PCB redesign.

Q: Are both substitute parts compliant with current regulatory standards?

A: Both the IXFT15N100Q3 and STW11NK100Z are classified as Active products with ROHS3 compliance and REACH unaffected status. The original IXFT12N100F, classified as Obsolete, does not carry explicit compliance certifications in the provided data.

Q: What is the primary advantage of the IXFT15N100Q3 over the original IXFT12N100F?

A: The IXFT15N100Q3 provides higher continuous drain current (15A versus 12A), superior power dissipation capability (690W versus 300W), and Active product status with current regulatory compliance. The on-state resistance remains equivalent at 1.05Ω, maintaining electrical performance characteristics.

Q: How does the operating temperature range compare across all three devices?

A: All three devices—IXFT12N100F, IXFT15N100Q3, and STW11NK100Z—operate across the identical temperature range of -55°C to 150°C (TJ), ensuring thermal compatibility in equivalent applications.

Q: What packaging considerations should be evaluated when selecting a substitute?

A: The IXFT12N100F and IXFT15N100Q3 both use surface mount TO-268 packaging, enabling direct PCB footprint compatibility. The STW11NK100Z uses through-hole TO-247-3 packaging, requiring PCB redesign and different mounting techniques. Package selection depends on existing PCB layout and manufacturing capabilities.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message