IXFR80N15Q Equivalent & Substitute Parts

Part Overview

The IXFR80N15Q is an N-Channel MOSFET manufactured by IXYS, rated for 150V drain-to-source voltage and 75A continuous drain current at 25°C. This device is packaged in the ISOPLUS247™ form factor and belongs to the HiPerFET™ series. The part is currently classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support, maintenance, and production continuity. Substitute parts must maintain electrical compatibility within the specified voltage and current ratings while accommodating the through-hole ISOPLUS247™ or equivalent package format.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	150	V
Continuous Drain Current (Id) @ 25°C	75	A (Tc)
On-State Resistance (Rds On Max) @ 40A, 10V	22.5	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 4mA	4	V
Gate Charge (Qg Max) @ 10V	180	nC
Power Dissipation (Max)	310	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-247-3 (ISOPLUS247™)	Through Hole
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitute parts for the IXFR80N15Q are selected based on the following electrical and mechanical criteria:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss) equal to or greater than 150V
Continuous Drain Current (Id) equal to or greater than 75A at 25°C
On-State Resistance (Rds On) compatible with circuit requirements
Gate Threshold Voltage (Vgs(th)) within acceptable operating range
Package format: Through-hole TO-247-3 or ISOPLUS247™ compatible
FET Type: N-Channel MOSFET (Metal Oxide technology)

Substitution Logic: Parts meeting or exceeding the voltage and current ratings while maintaining compatible on-state resistance and gate characteristics are classified as direct substitutes. Parts with higher voltage ratings (200V) or higher current ratings (90A) are acceptable provided they fit the same package footprint and do not introduce thermal or circuit design conflicts. Parts with improved power dissipation ratings provide additional design margin.

Parameter Comparison

Parameter	IXFR80N15Q	IXFR140N20P	HUF75852G3	Unit
Manufacturer	IXYS	IXYS	Fairchild Semiconductor	—
Drain-to-Source Voltage (Vdss)	150	200	150	V
Continuous Drain Current (Id) @ 25°C	75	90	75	A (Tc)
On-State Resistance (Rds On Max)	22.5 @ 40A, 10V	22 @ 45A, 10V	16 @ 75A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max)	4 @ 4mA	5 @ 4mA	4 @ 250µA	V
Gate Charge (Qg Max)	180 @ 10V	240 @ 10V	480 @ 20V	nC
Input Capacitance (Ciss Max)	4600 @ 25V	7500 @ 25V	7690 @ 25V	pF
Power Dissipation (Max)	310	300	500	W (Tc)
Operating Temperature Range	-55 to 150	-55 to 175	-55 to 175	°C (TJ)
Package Type	TO-247-3 (ISOPLUS247™)	TO-247-3 (ISOPLUS247™)	TO-247-3	—
Product Status	Obsolete	Active	Active	—
Series	HiPerFET™	HiPerFET™, Polar	UltraFET™	—

Engineering Selection Recommendations

IXFR140N20P (IXYS): This part is an active product with higher voltage (200V) and current (90A) ratings compared to the IXFR80N15Q. It maintains compatible on-state resistance and gate characteristics. The IXFR140N20P is packaged in TO-247-3 ISOPLUS247™ format, ensuring mechanical compatibility. Operating temperature range extends to 175°C, providing improved thermal margin. RoHS3 compliance and REACH unaffected status support regulatory requirements. This substitute is suitable for applications where higher voltage headroom or current capacity is beneficial.

HUF75852G3 (Fairchild Semiconductor): This part matches the voltage (150V) and current (75A) ratings of the IXFR80N15Q, providing direct electrical equivalence. The HUF75852G3 features superior on-state resistance (16 mOhm at 75A, 10V) and significantly higher power dissipation capability (500W), enabling improved thermal performance. Operating temperature range extends to 175°C. The part is packaged in TO-247-3 format with mechanical compatibility to the original device. RoHS3 compliance is confirmed. REACH status is affected, requiring verification for specific regulatory jurisdictions. This substitute provides enhanced performance characteristics within the same electrical envelope.

Selection Basis: Both substitutes are active products with established supply chains, addressing the obsolescence of the IXFR80N15Q. Selection between IXFR140N20P and HUF75852G3 depends on circuit voltage requirements, thermal design constraints, and regulatory compliance needs. The IXFR140N20P offers higher voltage capability for circuits with elevated supply voltages. The HUF75852G3 provides superior thermal performance for high-current or high-frequency applications.

Frequently Asked Questions (FAQ)

Q: Can the IXFR140N20P be used as a direct replacement for the IXFR80N15Q?

A: The IXFR140N20P is electrically compatible with the IXFR80N15Q in applications operating at or below 150V. The higher voltage rating (200V) does not prevent operation at lower voltages. On-state resistance and gate characteristics are comparable. Mechanical compatibility is confirmed through identical TO-247-3 ISOPLUS247™ packaging. Verification of circuit design margins is required for applications operating near maximum voltage or current limits.

Q: What are the key differences between the HUF75852G3 and IXFR80N15Q?

A: The HUF75852G3 provides identical voltage (150V) and current (75A) ratings. Primary differences include lower on-state resistance (16 mOhm versus 22.5 mOhm), higher power dissipation capability (500W versus 310W), higher gate charge (480 nC versus 180 nC), and extended operating temperature range (-55°C to 175°C versus -55°C to 150°C). These differences result in improved thermal performance and higher temperature operation capability.

Q: Are both substitute parts available in the same package as the IXFR80N15Q?

A: Yes. Both the IXFR140N20P and HUF75852G3 are packaged in TO-247-3 format. The IXFR80N15Q uses ISOPLUS247™ packaging, which is mechanically equivalent to standard TO-247-3. Pin configuration and footprint compatibility are maintained across all three parts.

Q: Which substitute should be selected for high-temperature applications?

A: Both substitutes support extended operating temperature ranges to 175°C, compared to the IXFR80N15Q maximum of 150°C. Either part is suitable for high-temperature operation. The HUF75852G3 offers additional thermal margin through higher power dissipation capability (500W), making it preferable for applications combining high temperature with high power dissipation.

Q: What is the impact of higher gate charge in the HUF75852G3?

A: The HUF75852G3 exhibits higher gate charge (480 nC at 20V) compared to the IXFR80N15Q (180 nC at 10V). Higher gate charge requires increased gate drive energy and may extend switching times. Circuit designs with gate drive limitations or high-frequency switching requirements should account for this parameter. Gate drive circuits must provide sufficient current and voltage to meet the higher charge requirement.

Q: Are there compliance or regulatory differences between the substitutes?

A: The IXFR140N20P is RoHS3 compliant and REACH unaffected. The HUF75852G3 is RoHS3 compliant with REACH affected status. Applications subject to REACH regulations should verify the HUF75852G3 compliance status for specific jurisdictions. Both parts carry EAR99 export classification.

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