IXFR80N10Q Equivalent & Substitute Parts

Part Overview

The IXFR80N10Q is an N-Channel MOSFET manufactured by IXYS, rated for 100V drain-to-source voltage with 76A continuous drain current at 25°C. This device is packaged in the ISOPLUS247™ form factor and is designed for high-power switching applications requiring through-hole mounting. The part is currently classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing system support and new designs.

Substiute Parts

IXFR80N10Q

IXYSIn Stock: 1145IXFR80N10Q Datasheet

Current PartRFQ

IRFB4321PBF

Infineon TechnologiesIn Stock: 18462IRFB4321PBF Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFR80N10Q is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

• Drain-to-Source Voltage (Vdss) must equal or exceed 100V
• Continuous Drain Current (Id) must equal or exceed 76A at 25°C
• On-state resistance (Rds On) must not exceed 15 mOhm at the specified gate voltage
• Gate charge (Qg) and input capacitance (Ciss) must be compatible with existing drive circuitry
• Maximum gate voltage (Vgs Max) must accommodate ±20V or higher
• Operating temperature range must encompass -55°C to 150°C minimum

Mechanical Compatibility Criteria:

• Through-hole mounting requirement
• Package footprint compatibility with ISOPLUS247™ or equivalent TO-247 form factor

The IRFB4321PBF meets these substitution criteria with electrical ratings that exceed the IXFR80N10Q specifications while maintaining compatible package geometry and through-hole mounting configuration.

Parameter Comparison

Engineering Selection Recommendations

The IRFB4321PBF is a direct functional substitute for the IXFR80N10Q based on the following engineering criteria:

Electrical Performance: The IRFB4321PBF exceeds the IXFR80N10Q in all critical electrical parameters. The 150V Vdss rating provides 50V additional margin over the 100V requirement. The 85A continuous drain current exceeds the 76A specification. Gate charge is reduced to 110 nC from 180 nC, resulting in lower drive power requirements. The ±30V maximum gate voltage provides enhanced gate drive margin compared to ±20V.

Product Status and Availability: The IRFB4321PBF is classified as Active with 18,400 units in stock, ensuring long-term availability and supply chain continuity. The IXFR80N10Q is obsolete with limited remaining inventory.

Compliance and Certifications: The IRFB4321PBF is RoHS3 Compliant and REACH Unaffected, meeting current regulatory requirements. Both devices share identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications.

Package Consideration: The IRFB4321PBF uses TO-220-3 packaging versus the ISOPLUS247™ (TO-247-3) of the original part. Both are through-hole packages with compatible thermal and electrical characteristics. PCB layout modifications may be required to accommodate the different package footprint.

Frequently Asked Questions (FAQ)

Q: Can the IRFB4321PBF directly replace the IXFR80N10Q without circuit modifications?

A: Electrical substitution is valid. The IRFB4321PBF meets or exceeds all electrical specifications of the IXFR80N10Q. However, the package footprint differs (TO-220-3 versus ISOPLUS247™), requiring PCB layout changes. Gate drive circuitry will benefit from the lower gate charge (110 nC versus 180 nC) but requires no modifications for compatibility.

Q: What is the significance of the different Rds On measurement conditions between the two parts?

A: The IXFR80N10Q specifies Rds On at 76A and 10V gate voltage, while the IRFB4321PBF specifies it at 33A and 10V gate voltage. Both devices maintain the same 15 mOhm maximum specification at their respective measurement points. The IRFB4321PBF will exhibit lower on-state resistance at higher current levels due to superior device design, providing improved thermal performance.

Q: Are there thermal management differences between the two packages?

A: Both TO-220-3 and ISOPLUS247™ packages are designed for through-hole mounting with similar thermal dissipation capabilities. The IRFB4321PBF has a maximum power dissipation rating of 350W versus 310W for the IXFR80N10Q. Thermal performance depends on PCB copper area, heatsink design, and airflow conditions. Consult device datasheets for thermal resistance specifications (θJA, θJC).

Q: What are the gate drive implications of the reduced gate charge in the IRFB4321PBF?

A: The IRFB4321PBF gate charge of 110 nC is 39% lower than the IXFR80N10Q at 180 nC. This reduces the charge that must be supplied by the gate driver circuit, resulting in lower power dissipation in the driver and faster switching transitions. Existing gate drive circuits designed for the IXFR80N10Q will operate with improved performance margins using the IRFB4321PBF.

Q: Is the higher operating temperature range of the IRFB4321PBF (-55°C to 175°C) a requirement for substitution?

A: No. The IXFR80N10Q operating range of -55°C to 150°C is fully contained within the IRFB4321PBF range of -55°C to 175°C. The extended upper temperature limit of the IRFB4321PBF provides additional design margin but is not required for direct substitution in applications operating within the original -55°C to 150°C specification.

Q: What inventory and supply chain considerations apply to this substitution?

A: The IXFR80N10Q is obsolete with 1,052 units remaining in stock. The IRFB4321PBF is active with 18,400 units in stock, providing assured long-term availability. For new designs or production quantities exceeding remaining IXFR80N10Q inventory, the IRFB4321PBF is the recommended selection.