IXFR66N50Q2 Equivalent & Substitute Parts

Part Overview

The IXFR66N50Q2 is an N-Channel MOSFET rated for 500V drain-to-source voltage with 50A continuous drain current at 25°C. This device is manufactured by IXYS in the HiPerFET™ series and is housed in an ISOPLUS247™ package (TO-247-3). The part is classified as obsolete, necessitating identification of active equivalent and substitute components for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating packaging and certification differences.

Substiute Parts

IXFR66N50Q2

IXYSIn Stock: 10052IXFR66N50Q2 Datasheet

Current PartRFQ

IXFR80N50Q3

IXYSIn Stock: 7081IXFR80N50Q3 Datasheet

SimilarRFQ

APT56F50B2

Microchip TechnologyIn Stock: 987APT56F50B2 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IXFR66N50Q2 is determined by the following critical parameters:

Mandatory Matching Criteria:

• Drain to Source Voltage (Vdss): 500V minimum
• Continuous Drain Current (Id): 50A or greater at 25°C
• FET Type: N-Channel MOSFET
• Package Type: TO-247-3 or compatible variant
• Operating Temperature Range: -55°C to 150°C or wider

Allowable Variation Parameters:

• Power Dissipation: Equal to or greater than 500W
• Rds On (Max): Equal to or lower (improved performance)
• Gate Charge (Qg): Equal to or lower (improved switching characteristics)
• Input Capacitance (Ciss): Variation acceptable within application constraints

The identified substitute parts meet or exceed the mandatory criteria while offering improved electrical characteristics in specific parameters. Both substitute parts are active products with current manufacturing status and RoHS3 compliance, addressing the obsolescence of the original IXFR66N50Q2.

Parameter Comparison

Engineering Selection Recommendations

IXFR80N50Q3 (IXYS)

The IXFR80N50Q3 is the primary substitute for the IXFR66N50Q2. Both devices are manufactured by IXYS within the HiPerFET™ series and share identical voltage and current ratings. The IXFR80N50Q3 is an active product with ROHS3 compliance and offers improved on-resistance (72 mOhm versus 85 mOhm), resulting in lower conduction losses. The device maintains the same gate charge specification and operating temperature range. The ISOPLUS247™ package is directly compatible with existing PCB layouts. This substitute is recommended for applications requiring direct form-fit-function replacement with enhanced thermal performance (570W versus 500W).

APT56F50B2 (Microchip Technology)

The APT56F50B2 is a secondary substitute manufactured by Microchip Technology in the POWER MOS 8™ series. This device exceeds the original specifications with 56A continuous drain current and 780W power dissipation capability. The T-MAX™ [B2] package is a TO-247-3 variant, requiring verification of PCB footprint compatibility. The APT56F50B2 is an active product with ROHS3 compliance. Selection of this substitute is appropriate for applications where increased current capacity and thermal headroom provide design margin benefits. The higher gate charge specification (220 nC versus 200 nC) may require gate driver adjustment in high-frequency switching applications.

Both substitute parts maintain the 500V voltage rating, support the -55°C to 150°C operating temperature range, and are available in through-hole TO-247-3 packages. Selection between substitutes depends on application-specific requirements for on-resistance, power dissipation, and package compatibility.

Frequently Asked Questions (FAQ)

Q: Can the IXFR80N50Q3 be used as a direct replacement for the IXFR66N50Q2?

A: Yes. Both devices share identical voltage (500V) and current (50A) ratings, the same gate charge specification (200 nC), and compatible ISOPLUS247™ packaging. The IXFR80N50Q3 offers improved on-resistance and higher power dissipation capability. PCB layout and thermal management remain unchanged.

Q: What are the key differences between the IXFR80N50Q3 and APT56F50B2?

A: The IXFR80N50Q3 maintains exact current and gate charge specifications of the original part with lower on-resistance. The APT56F50B2 provides higher current capacity (56A versus 50A) and greater power dissipation (780W versus 500W), but features slightly higher on-resistance (100 mOhm) and gate charge (220 nC). Package variants differ: ISOPLUS247™ versus T-MAX™ [B2].

Q: Is the APT56F50B2 package compatible with existing PCB designs?

A: The APT56F50B2 uses a TO-247-3 variant package. While mechanically similar to the standard TO-247-3, the T-MAX™ [B2] package requires verification of PCB footprint compatibility before implementation. Consult package drawings and thermal pad specifications.

Q: Why is the IXFR66N50Q2 classified as obsolete?

A: The IXFR66N50Q2 is no longer in active production. The IXFR80N50Q3 represents the current generation equivalent within the IXYS HiPerFET™ series, offering improved performance characteristics while maintaining electrical compatibility.

Q: Are both substitute parts RoHS3 compliant?

A: Yes. Both the IXFR80N50Q3 and APT56F50B2 are ROHS3 compliant. The original IXFR66N50Q2 RoHS status is not specified in available documentation.

Q: What impact does the higher gate charge of the APT56F50B2 have on circuit design?

A: The APT56F50B2 gate charge is 220 nC compared to 200 nC for the original part. This 10% increase may require gate driver output current adjustment in high-frequency switching applications to maintain switching speed and efficiency. Verify gate driver specifications support the higher charge requirement.

Q: Can both substitute parts operate across the full -55°C to 150°C temperature range?

A: Yes. Both the IXFR80N50Q3 and APT56F50B2 maintain the -55°C to 150°C operating temperature range of the original IXFR66N50Q2.