IXFR64N60P N-Channel 600V 36A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFR64N60P is an N-Channel 600V 36A MOSFET manufactured by IXYS in the HiPerFET™ series. This device is packaged in ISOPLUS247™ (TO-247-3) through-hole configuration and is rated for 320W maximum power dissipation at case temperature. The part is Active status and RoHS3 compliant.

Equivalent and substitute parts are identified when applications require alternative sourcing due to inventory constraints, supply chain considerations, or when design specifications permit operation within the electrical and mechanical parameters of alternative devices. Substitute MOSFETs must maintain compatibility across drain-source voltage rating, continuous drain current capability, gate drive voltage, on-state resistance characteristics, and through-hole mounting configuration.

Substiute Parts

IXFR64N60P

IXYSIn Stock: 739IXFR64N60P Datasheet

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APT34F60B

Microchip TechnologyIn Stock: 1410APT34F60B Datasheet

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IPW60R099CPAFKSA1

Infineon TechnologiesIn Stock: 989IPW60R099CPAFKSA1 Datasheet

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STW34NM60N

STMicroelectronicsIn Stock: 4948STW34NM60N Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFR64N60P is determined by the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: All substitute parts must maintain a Drain to Source Voltage (Vdss) rating of 600V to ensure safe operation in the same circuit topology.

Current Capability: Substitute parts must support continuous drain current (Id) at or above the application requirement. The IXFR64N60P is rated for 36A continuous drain current.

On-State Resistance (Rds On): The maximum on-state resistance at specified gate-source voltage and drain current determines switching losses and thermal performance. Substitute parts with equivalent or lower Rds On values maintain thermal compatibility.

Gate Charge (Qg): Gate charge affects switching speed and driver circuit requirements. Substitute parts with comparable gate charge values ensure compatible gate drive performance.

Mounting Configuration: All substitute parts utilize through-hole TO-247-3 package configuration, ensuring mechanical and electrical pin compatibility.

Compliance Standards: All substitute parts maintain RoHS3 compliance and REACH unaffected status, consistent with the primary part.

Parameter Comparison

Engineering Selection Recommendations

APT34F60B (Microchip Technology): This substitute maintains 600V Vdss and 36A continuous drain current ratings identical to the IXFR64N60P. The APT34F60B exhibits higher power dissipation capability (624W vs. 320W) and lower gate charge (165nC vs. 200nC), resulting in reduced switching losses. The on-state resistance specification differs at measurement point (210mOhm @ 17A vs. 105mOhm @ 32A), requiring thermal analysis for specific application current levels. This part is Active status and RoHS3 compliant with 1334 units in stock.

IPW60R099CPAFKSA1 (Infineon Technologies): This substitute maintains 600V Vdss rating with reduced continuous drain current (31A vs. 36A). The IPW60R099CPAFKSA1 features significantly lower gate charge (80nC vs. 200nC) and input capacitance (2800pF vs. 12000pF), enabling faster switching performance. On-state resistance is equivalent at 105mOhm. This device carries AEC-Q101 automotive qualification and is suitable for applications where the 31A current rating is sufficient. Operating temperature minimum is -40°C versus -55°C for the primary part. This part is Active status and RoHS3 compliant with 951 units in stock.

STW34NM60N (STMicroelectronics): This substitute maintains 600V Vdss rating with reduced continuous drain current (29A vs. 36A). The STW34NM60N features significantly lower gate charge (80nC vs. 200nC) and input capacitance (2722pF vs. 12000pF), enabling faster switching performance. On-state resistance is equivalent at 105mOhm. This part is suitable for applications where the 29A current rating is sufficient. This part is Active status and RoHS3 compliant with 4933 units in stock, representing the highest inventory availability among substitute options.

Frequently Asked Questions (FAQ)

Q: Can the APT34F60B directly replace the IXFR64N60P in all applications?

A: The APT34F60B maintains identical 600V and 36A ratings as the IXFR64N60P with compatible TO-247-3 through-hole packaging. Both parts are RoHS3 compliant. The primary difference is on-state resistance measurement point (210mOhm @ 17A vs. 105mOhm @ 32A). Direct substitution is valid when application current levels and thermal requirements are verified against the specific Rds On characteristics of each device.

Q: What are the current limitations of the IPW60R099CPAFKSA1 and STW34NM60N substitutes?

A: The IPW60R099CPAFKSA1 is rated for 31A continuous drain current, and the STW34NM60N is rated for 29A continuous drain current, compared to 36A for the IXFR64N60P. These substitutes are suitable only for applications where the maximum required continuous drain current does not exceed their respective ratings. Applications requiring the full 36A capability must use the IXFR64N60P or APT34F60B.

Q: Are all substitute parts compatible with the same gate drive circuit?

A: All substitute parts operate at 10V drive voltage for maximum Rds On specification. However, gate charge values differ significantly: IXFR64N60P (200nC), APT34F60B (165nC), IPW60R099CPAFKSA1 (80nC), and STW34NM60N (80nC). Lower gate charge values enable faster switching but require verification that the gate driver circuit can supply the necessary peak gate current without exceeding driver specifications.

Q: What is the operating temperature range difference between substitutes?

A: The IXFR64N60P, APT34F60B, and STW34NM60N support -55°C to 150°C operating temperature range. The IPW60R099CPAFKSA1 supports -40°C to 150°C. Applications requiring operation below -40°C must use the IXFR64N60P, APT34F60B, or STW34NM60N.

Q: Does the IPW60R099CPAFKSA1 automotive qualification affect its use in non-automotive applications?

A: The IPW60R099CPAFKSA1 carries AEC-Q101 automotive qualification, indicating compliance with automotive reliability standards. This qualification does not restrict use in non-automotive applications. The device is suitable for any application within its electrical and thermal specifications.

Q: How do input capacitance differences affect circuit performance?

A: Input capacitance (Ciss) values vary significantly among substitutes: IXFR64N60P (12000pF @ 25V), APT34F60B (6640pF @ 25V), IPW60R099CPAFKSA1 (2800pF @ 100V), and STW34NM60N (2722pF @ 100V). Lower input capacitance reduces gate charge requirements and enables faster switching transitions. Applications with high-frequency switching benefit from lower Ciss values, while applications with slower switching may not require optimization for this parameter.

Q: Are all substitute parts available in the same packaging format?

A: All substitute parts utilize TO-247-3 through-hole package configuration, ensuring mechanical and electrical pin compatibility. The IXFR64N60P uses ISOPLUS247™ designation, while substitutes use standard TO-247 or PG-TO247-3 designations. These designations refer to the same physical package with identical pin configuration and mounting requirements.