IXFR55N50 Equivalent & Substitute Parts

Part Overview

The IXFR55N50 is an N-Channel MOSFET rated for 500V drain-to-source voltage with 48A continuous drain current at 25°C. This device is packaged in the ISOPLUS247™ (TO-247-3) through-hole format and is part of the HiPerFET™ series from IXYS. The part is currently classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support and procurement planning.

Substiute Parts

IXFR55N50

IXYSIn Stock: 1530IXFR55N50 Datasheet

Current PartRFQ

IXFR80N50P

IXYSIn Stock: 1045IXFR80N50P Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFR55N50 is determined by the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: The substitute part must maintain the 500V Vdss rating to ensure safe operation in the same circuit topology.

Current Handling Capability: The substitute part must support continuous drain current at or above the application requirement. The IXFR55N50 specifies 48A (Tc) at 25°C.

On-State Resistance (Rds On): The substitute part's Rds On characteristics must be compatible with thermal and power dissipation requirements of the target application.

Gate Drive Characteristics: Gate threshold voltage and gate charge must be compatible with existing gate drive circuitry.

Thermal Performance: Power dissipation rating and operating temperature range must meet or exceed application demands.

Package Compatibility: The substitute must use the same ISOPLUS247™ (TO-247-3) through-hole package to ensure mechanical and thermal interface compatibility.

The IXFR80N50P meets these substitution criteria as an active product within the same HiPerFET™ series, maintaining identical voltage rating and package format while offering comparable current and thermal specifications.

Parameter Comparison

Engineering Selection Recommendations

Product Status Consideration: The IXFR55N50 is classified as obsolete. The IXFR80N50P is an active product from the same manufacturer and series, ensuring continued availability and manufacturing support.

Compliance and Certifications: Both parts share identical REACH status (REACH Unaffected), ECCN classification (EAR99), and HTSUS code (8541.29.0095). The IXFR80N50P carries RoHS3 compliance, providing additional regulatory alignment for new designs.

Electrical Compatibility: Both devices maintain the 500V Vdss rating and TO-247-3 package format. The IXFR80N50P exhibits lower on-state resistance (72 mOhm vs. 90 mOhm) and reduced gate charge (197 nC vs. 330 nC), resulting in improved switching efficiency and reduced gate drive power requirements.

Thermal Performance: The IXFR80N50P supports an extended lower operating temperature limit (-55°C vs. -40°C), though its maximum power dissipation is slightly lower (360W vs. 400W). Applications operating within the -40°C to 150°C range are fully compatible.

Current Rating: The IXFR80N50P continuous drain current is 45A compared to 48A for the IXFR55N50. Applications requiring the full 48A rating must evaluate whether 45A meets system requirements.

Frequently Asked Questions (FAQ)

Q: Can the IXFR80N50P directly replace the IXFR55N50 in existing designs?

A: Direct replacement is possible for applications where the 45A continuous drain current rating of the IXFR80N50P meets or exceeds the design requirement. Both parts share identical 500V voltage rating, TO-247-3 package, and gate drive voltage specifications. Thermal design must account for the IXFR80N50P's 360W maximum power dissipation versus the IXFR55N50's 400W rating.

Q: What are the key differences in gate drive characteristics?

A: The IXFR80N50P has lower gate charge (197 nC vs. 330 nC) and lower input capacitance (12700 pF vs. 9400 pF), resulting in faster switching transitions and reduced gate drive power consumption. Gate threshold voltage is slightly higher (5V vs. 4.5V), and maximum gate voltage rating is increased (±30V vs. ±20V).

Q: Are there packaging or mounting differences?

A: Both parts use identical ISOPLUS247™ (TO-247-3) through-hole packaging. The IXFR55N50 is supplied in standard packaging, while the IXFR80N50P is supplied in tube packaging. No mechanical or thermal interface modifications are required for substitution.

Q: What is the significance of the extended temperature range in the IXFR80N50P?

A: The IXFR80N50P supports operation from -55°C to 150°C, compared to -40°C to 150°C for the IXFR55N50. This extended lower temperature limit provides additional design margin for applications operating in cold environments, though most industrial applications operate within the -40°C minimum.

Q: How does the lower on-state resistance of the IXFR80N50P affect system performance?

A: The IXFR80N50P's 72 mOhm Rds On (measured at 40A, 10V) compared to the IXFR55N50's 90 mOhm (measured at 27.5A, 10V) results in reduced conduction losses and lower junction temperature rise during operation. This improves overall system efficiency and thermal performance.

Q: Is the IXFR80N50P suitable for high-frequency switching applications?

A: The IXFR80N50P's reduced gate charge (197 nC) and lower input capacitance enable faster switching transitions compared to the IXFR55N50. This characteristic is beneficial for high-frequency applications, though the specific frequency capability depends on gate drive circuit design and thermal management.

Q: What compliance certifications apply to both parts?

A: Both the IXFR55N50 and IXFR80N50P are REACH Unaffected and classified under ECCN EAR99. The IXFR80N50P additionally carries RoHS3 compliance certification, making it suitable for applications with RoHS requirements.