IXFR50N50 Equivalent & Substitute Parts

Part Overview

The IXFR50N50 is an N-Channel MOSFET rated for 500V drain-to-source voltage with a continuous drain current of 43A at 25°C. This device is packaged in the ISOPLUS247™ (TO-247-3) through-hole configuration and is part of the HiPerFET™ series from IXYS. The IXFR50N50 is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support and component procurement.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	43	A
On-State Resistance (Rds On Max) @ Id, Vgs	100 mOhm @ 25A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id	4.5	V @ 8mA
Power Dissipation (Max)	400	W
Operating Temperature Range	-40 to 150	°C
Package Type	TO-247-3 (ISOPLUS247™)	Through Hole
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution of the IXFR50N50 is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

Drain-to-Source Voltage (Vdss) must equal or exceed 500V
Continuous Drain Current (Id) must meet or exceed 43A at 25°C
On-State Resistance (Rds On) must not exceed the maximum specified value to ensure thermal performance
Gate Threshold Voltage (Vgs(th)) must be compatible with existing gate drive circuits
Power Dissipation capability must support the application thermal requirements

Mechanical Compatibility Criteria:

Package type must be TO-247-3 (ISOPLUS247™) for through-hole mounting compatibility
FET type must be N-Channel
Technology must be MOSFET (Metal Oxide)

The IXFR80N50P meets these substitution criteria. It maintains the same 500V Vdss rating, exceeds the 43A continuous drain current requirement with 45A capability, operates within the same temperature range, and uses the identical TO-247-3 package configuration.

Parameter Comparison

Parameter	IXFR50N50	IXFR80N50P	Unit
Manufacturer	IXYS	IXYS
FET Type	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain-to-Source Voltage (Vdss)	500	500	V
Continuous Drain Current (Id) @ 25°C	43	45	A
On-State Resistance (Rds On Max)	100 mOhm @ 25A, 10V	72 mOhm @ 40A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id	4.5 @ 8mA	5 @ 8mA	V
Gate Charge (Qg) Max @ Vgs	330 @ 10V	197 @ 10V	nC
Input Capacitance (Ciss) Max @ Vds	9400 @ 25V	12700 @ 25V	pF
Power Dissipation (Max)	400	360	W
Operating Temperature Range	-40 to 150	-55 to 150	°C
Package Type	TO-247-3 (ISOPLUS247™)	TO-247-3 (ISOPLUS247™)
Mounting Type	Through Hole	Through Hole
Product Status	Obsolete	Active

Engineering Selection Recommendations

The IXFR80N50P is a direct substitute for the IXFR50N50 based on electrical and mechanical compatibility. The substitute part offers the following advantages:

Product Status: The IXFR80N50P is classified as Active, ensuring continued availability and long-term supply chain support compared to the obsolete IXFR50N50.

Electrical Performance: The IXFR80N50P provides improved on-state resistance (72 mOhm versus 100 mOhm), resulting in lower conduction losses and reduced thermal dissipation requirements. The gate charge is reduced (197 nC versus 330 nC), enabling faster switching characteristics.

Compliance: The IXFR80N50P is RoHS3 Compliant, whereas the IXFR50N50 compliance status is not specified. Both parts maintain REACH Unaffected status and EAR99 export classification.

Temperature Range: The IXFR80N50P extends the minimum operating temperature to -55°C, providing broader environmental operating capability.

Thermal Considerations: While the IXFR80N50P has a slightly lower maximum power dissipation rating (360W versus 400W), the improved on-state resistance typically results in lower actual power dissipation in typical applications.

Frequently Asked Questions (FAQ)

Q: Can the IXFR80N50P directly replace the IXFR50N50 in existing designs?

A: Yes. Both devices share identical drain-to-source voltage (500V), equivalent continuous drain current ratings (45A versus 43A), and the same TO-247-3 package configuration. The IXFR80N50P meets all electrical and mechanical requirements for direct substitution.

Q: What are the key differences between these two parts?

A: The primary differences are product status (Active versus Obsolete), on-state resistance (72 mOhm versus 100 mOhm), gate charge (197 nC versus 330 nC), and operating temperature range (-55°C to 150°C versus -40°C to 150°C). The IXFR80N50P also includes RoHS3 compliance certification.

Q: Will the improved on-state resistance of the IXFR80N50P affect circuit operation?

A: The lower on-state resistance of the IXFR80N50P reduces conduction losses, which typically improves overall circuit efficiency. This change is beneficial and does not introduce compatibility issues.

Q: Are there any gate drive circuit modifications required when switching from IXFR50N50 to IXFR80N50P?

A: No modifications are required. Both devices have compatible gate threshold voltages (4.5V versus 5V) and operate with the same ±20V to ±30V gate voltage range. The reduced gate charge of the IXFR80N50P may allow for faster switching with existing gate drive circuits.

Q: Is the TO-247-3 package identical between both parts?

A: Yes. Both the IXFR50N50 and IXFR80N50P use the TO-247-3 (ISOPLUS247™) through-hole package, ensuring mechanical and thermal interface compatibility on printed circuit boards.

Q: What is the impact of the lower power dissipation rating on the IXFR80N50P?

A: The IXFR80N50P has a maximum power dissipation rating of 360W compared to 400W for the IXFR50N50. However, due to the improved on-state resistance, actual power dissipation in typical applications is generally lower, making this rating difference non-critical for most applications.

Q: Are both parts available from the same manufacturer?

A: Yes. Both the IXFR50N50 and IXFR80N50P are manufactured by IXYS and are part of the HiPerFET™ series.

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