IXFR4N100Q Equivalent & Substitute Parts

Part Overview

The IXFR4N100Q is an N-Channel MOSFET manufactured by IXYS, rated for 1000V drain-to-source voltage with 3.5A continuous drain current at 25°C. This device is part of the HiPerFET™ Q Class series and is housed in an ISOPLUS247™ package (TO-247-3 form factor). The component is designed for high-voltage switching applications requiring through-hole mounting and is currently in active production status with full RoHS3 compliance.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter tolerances while maintaining the same package form factor and mounting technology. Identifying qualified substitutes ensures design flexibility, supply chain continuity, and access to alternative inventory sources.

Substiute Parts

IXFR4N100Q

IXYSIn Stock: 1022IXFR4N100Q Datasheet

Current PartRFQ

STW5NK100Z

STMicroelectronicsIn Stock: 1260STW5NK100Z Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IXFR4N100Q is determined by strict alignment of the following critical electrical and mechanical parameters:

Electrical Equivalence Criteria:

• Drain-to-Source Voltage (Vdss): Must equal 1000V
• Continuous Drain Current (Id) @ 25°C: Must equal or exceed 3.5A (Tc)
• Drive Voltage (Max Rds On): Must equal 10V
• Gate Threshold Voltage (Vgs(th)): Must not exceed 5V @ specified current
• Operating Temperature Range: Must span -55°C to 150°C (TJ)

Mechanical & Compliance Criteria:

• Package / Case: Must be TO-247-3 (ISOPLUS247™ compatible)
• Mounting Type: Must be Through Hole
• RoHS Status: Must be ROHS3 Compliant
• Product Status: Must be Active

The STW5NK100Z meets all substitution criteria and is qualified as a direct equivalent for the IXFR4N100Q.

Parameter Comparison

Engineering Selection Recommendations

Both the IXFR4N100Q and STW5NK100Z are active production components with full RoHS3 compliance and REACH unaffected status. Both devices meet the core electrical specifications for 1000V, 3.5A N-Channel MOSFET applications and are housed in identical TO-247-3 through-hole packages.

IXFR4N100Q (IXYS HiPerFET™ Q Class):

• Lower on-state resistance (Rds On): 3.0 Ohm @ 2A, 10V
• Lower gate charge (Qg): 39 nC @ 10V
• Lower input capacitance (Ciss): 1050 pF @ 25V
• Lower maximum power dissipation: 80W (Tc)
• Gate voltage rating: ±20V

STW5NK100Z (STMicroelectronics SuperMESH3™):

• Higher maximum power dissipation: 125W (Tc)
• Higher gate voltage rating: ±30V
• Lower gate threshold voltage: 4.5V @ 100µA
• Higher input capacitance: 1154 pF @ 25V
• Slightly higher on-state resistance: 3.7 Ohm @ 1.75A, 10V

Selection between these parts depends on application-specific requirements. The IXFR4N100Q is suitable for designs prioritizing lower switching losses and gate charge. The STW5NK100Z is suitable for designs requiring higher thermal headroom or extended gate voltage tolerance.

Frequently Asked Questions (FAQ)

Q: Can the STW5NK100Z directly replace the IXFR4N100Q in an existing circuit?

A: Yes. Both devices share identical voltage ratings (1000V Vdss), current ratings (3.5A Id), drive voltage (10V), operating temperature range (-55°C to 150°C), and TO-247-3 package form factor. Pin configuration and mounting are identical. Circuit operation is maintained within specified parameter tolerances.

Q: What are the differences in on-state resistance between these parts?

A: The IXFR4N100Q has a maximum Rds On of 3.0 Ohm @ 2A, 10V. The STW5NK100Z has a maximum Rds On of 3.7 Ohm @ 1.75A, 10V. The IXFR4N100Q exhibits lower on-state resistance, resulting in reduced conduction losses in switching applications.

Q: How do gate charge specifications affect circuit design?

A: The IXFR4N100Q has a maximum gate charge of 39 nC @ 10V, while the STW5NK100Z has 59 nC @ 10V. Lower gate charge reduces driver power requirements and enables faster switching transitions. Applications with high switching frequency benefit from the lower gate charge of the IXFR4N100Q.

Q: Are both parts suitable for high-temperature applications?

A: Yes. Both devices operate across the identical temperature range of -55°C to 150°C (TJ). Thermal management design should account for the different maximum power dissipation ratings: 80W for the IXFR4N100Q and 125W for the STW5NK100Z.

Q: What is the significance of the different gate threshold voltages?

A: The IXFR4N100Q has a maximum Vgs(th) of 5V @ 1.5mA, while the STW5NK100Z has 4.5V @ 100µA. The STW5NK100Z exhibits a lower threshold voltage, which may provide faster turn-on response in certain driver configurations. Both values remain within acceptable operating margins for standard gate driver circuits.

Q: Are there compliance or regulatory differences between these parts?

A: No. Both the IXFR4N100Q and STW5NK100Z are ROHS3 compliant, REACH unaffected, and classified under the same HTSUS code (8541.29.0095). Both carry EAR99 ECCN classification and have unlimited moisture sensitivity level (MSL 1).

Q: Can I use the STW5NK100Z if my design requires the lower gate charge of the IXFR4N100Q?

A: The STW5NK100Z has higher gate charge (59 nC vs. 39 nC). If gate charge is a critical design parameter, the IXFR4N100Q is the appropriate selection. If gate charge is not a limiting factor, the STW5NK100Z is functionally equivalent.

Q: What is the difference in input capacitance between these devices?

A: The IXFR4N100Q has a maximum input capacitance (Ciss) of 1050 pF @ 25V. The STW5NK100Z has 1154 pF @ 25V. Higher input capacitance increases gate drive power requirements and may affect switching speed. The IXFR4N100Q has lower input capacitance, which is advantageous in high-frequency switching applications.