IXFR48N60P N-Channel 600V 32A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFR48N60P is an N-Channel 600V 32A MOSFET manufactured by IXYS in the HiPerFET™ series. This device is rated for 300W maximum power dissipation and features the ISOPLUS247™ package configuration. The part is Active in product status and RoHS3 compliant, making it suitable for industrial power conversion applications requiring high voltage switching capability.

Equivalent and substitute parts are identified when design requirements necessitate alternative sourcing, inventory constraints, or when performance specifications allow for compatible alternatives within defined electrical and mechanical parameters.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	32	A (Tc)
Rds On (Max) @ Id, Vgs	150	mOhm @ 24A, 10V
Gate Charge (Qg) (Max) @ Vgs	150	nC @ 10V
Power Dissipation (Max)	300	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-247-3	Through Hole
Vgs (Max)	±30	V

Substitute Part Grouping Explanation

Substitute parts for the IXFR48N60P are qualified based on the following critical parameters that determine functional compatibility:

Voltage Rating: All substitute parts maintain the 600V Drain to Source Voltage (Vdss) specification, ensuring compatibility with the same circuit voltage levels.

Package Configuration: All substitutes use the TO-247-3 through-hole package, maintaining mechanical and thermal interface compatibility with existing PCB designs.

Gate Drive Voltage: All parts operate with 10V drive voltage at maximum Rds On specification, ensuring compatibility with standard gate driver circuits.

Operating Temperature Range: All substitutes support the -55°C to 150°C operating temperature window or equivalent industrial temperature ranges.

Compliance Standards: All substitute parts are RoHS3 compliant and REACH unaffected, matching the regulatory status of the main part.

Substitutes are grouped by their continuous drain current capability and on-resistance characteristics, which determine their suitability for specific application current levels and thermal management requirements.

Parameter Comparison

Parameter	IXFR48N60P	APT34F60B	IPW60R099CPAFKSA1	STW26NM60N
Manufacturer	IXYS	Microchip Technology	Infineon Technologies	STMicroelectronics
Drain to Source Voltage (Vdss)	600V	600V	600V	600V
Continuous Drain Current (Id) @ 25°C	32A	36A	31A	20A
Rds On (Max) @ Id, Vgs	150mOhm @ 24A, 10V	210mOhm @ 17A, 10V	105mOhm @ 18A, 10V	165mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs	150nC @ 10V	165nC @ 10V	80nC @ 10V	60nC @ 10V
Power Dissipation (Max)	300W	624W	255W	140W
Operating Temperature Range	-55 to 150°C	-55 to 150°C	-40 to 150°C	-55 to 150°C
Package Type	TO-247-3	TO-247-3	TO-247-3	TO-247-3
Vgs (Max)	±30V	±30V	±20V	±30V
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Product Status	Active	Active	Active	Active

Engineering Selection Recommendations

APT34F60B (Microchip Technology): This substitute provides higher continuous drain current (36A) and superior power dissipation capability (624W) compared to the IXFR48N60P. The APT34F60B is suitable for applications requiring increased current handling or thermal margin. On-resistance is higher at 210mOhm, which may increase conduction losses. This part maintains full RoHS3 compliance and Active product status.

IPW60R099CPAFKSA1 (Infineon Technologies): This substitute offers the lowest on-resistance (105mOhm) and lowest gate charge (80nC) among the available options, resulting in reduced conduction and switching losses. The IPW60R099CPAFKSA1 is qualified to AEC-Q101 automotive standards and carries Automotive grade designation. Operating temperature minimum is -40°C, which is suitable for most industrial applications. Power dissipation is 255W, slightly lower than the main part. This part maintains full RoHS3 compliance and Active product status.

STW26NM60N (STMicroelectronics): This substitute is rated for lower continuous drain current (20A) and reduced power dissipation (140W). The STW26NM60N is suitable only for applications with current requirements at or below 20A. Gate charge is the lowest at 60nC, and on-resistance is 165mOhm. This part maintains full RoHS3 compliance and Active product status with the highest available inventory (65,100 pieces).

All substitute parts are through-hole mounted in TO-247-3 packages, maintaining mechanical compatibility with existing designs. Selection should be based on specific application current requirements, thermal management capabilities, and switching loss considerations.

Frequently Asked Questions (FAQ)

Q: Can the APT34F60B replace the IXFR48N60P in all applications?

A: The APT34F60B is electrically compatible for applications operating at or below 32A continuous drain current. The higher current rating (36A) and power dissipation (624W) provide additional margin. However, the higher on-resistance (210mOhm vs. 150mOhm) will result in increased conduction losses. Thermal design verification is required if the application operates near the IXFR48N60P's 300W limit.

Q: What are the advantages of the IPW60R099CPAFKSA1?

A: The IPW60R099CPAFKSA1 offers superior switching characteristics with the lowest on-resistance (105mOhm) and gate charge (80nC) among available substitutes. These characteristics reduce both conduction and switching losses, improving overall efficiency. The part carries AEC-Q101 automotive qualification, providing additional reliability assurance for demanding applications.

Q: Is the STW26NM60N suitable as a direct replacement?

A: The STW26NM60N is not a direct replacement for applications requiring the full 32A continuous drain current capability of the IXFR48N60P. This substitute is limited to 20A maximum continuous current and 140W power dissipation. It is suitable only for applications with current requirements at or below 20A.

Q: Are all substitute parts RoHS3 compliant?

A: Yes, all substitute parts listed (APT34F60B, IPW60R099CPAFKSA1, and STW26NM60N) are RoHS3 compliant and REACH unaffected, matching the regulatory status of the IXFR48N60P.

Q: What is the impact of different gate charge values on circuit design?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. Lower gate charge (IPW60R099CPAFKSA1 at 80nC) reduces gate driver power requirements and switching losses. Higher gate charge (APT34F60B at 165nC) requires more gate driver current but does not affect circuit compatibility if the gate driver is rated for the required charge delivery.

Q: Can I use these substitutes in circuits designed for -55°C minimum operating temperature?

A: The IPW60R099CPAFKSA1 has a minimum operating temperature of -40°C, which does not meet the -55°C requirement. The IXFR48N60P, APT34F60B, and STW26NM60N all support -55°C minimum operating temperature and are suitable for full temperature range applications.

Q: Are all substitutes available in the same package configuration?

A: Yes, all substitute parts use the TO-247-3 through-hole package, maintaining mechanical and thermal interface compatibility with PCB designs specified for the IXFR48N60P.

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