IXFR44N60 Equivalent & Substitute Parts

Part Overview

The IXFR44N60 is an N-Channel 600V 38A MOSFET manufactured by IXYS in the HiPerFET™ series. This device is packaged in ISOPLUS247™ (TO-247-3) configuration and rated for 400W maximum power dissipation. The part is Active status and ROHS3 compliant, suitable for high-voltage switching applications requiring robust thermal performance and high current handling capability.

Substitute parts are identified when equivalent electrical specifications and mechanical compatibility exist, enabling direct replacement in circuit designs without functional degradation.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	38	A
Power Dissipation (Max)	400	W
Rds On (Max) @ 22A, 10V	130	mOhm
Gate Charge (Qg) @ 10V	330	nC
Input Capacitance (Ciss) @ 25V	8900	pF
Operating Temperature Range	-55 to 150	°C
Package Type	TO-247-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution eligibility for the IXFR44N60 is determined by the following critical parameters:

Mandatory Matching Criteria:

Drain to Source Voltage (Vdss): 600V
Package/Case: TO-247-3 (mechanical compatibility)
Mounting Type: Through Hole
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)

Allowable Variation Criteria:

Continuous Drain Current (Id): Substitute must meet or exceed 38A requirement
Power Dissipation: Substitute must meet or exceed 400W requirement
Rds On: Lower values are acceptable (improved performance)
Gate Charge (Qg): Lower values are acceptable (improved switching characteristics)
Input Capacitance (Ciss): Lower values are acceptable
Operating Temperature Range: Substitute must support minimum -55°C and maximum 150°C
Vgs(th) and Vgs(Max): Must be compatible with 10V drive voltage specification

The identified substitutes (IPW60R099CPAFKSA1 and STW34NM60N) meet the mandatory matching criteria. However, both substitutes present reduced continuous drain current and power dissipation ratings compared to the IXFR44N60, requiring application-level verification that circuit current and thermal demands do not exceed substitute specifications.

Parameter Comparison

Parameter	IXFR44N60	IPW60R099CPAFKSA1	STW34NM60N	Unit
Manufacturer	IXYS	Infineon Technologies	STMicroelectronics	—
Drain to Source Voltage (Vdss)	600	600	600	V
Continuous Drain Current (Id) @ 25°C	38	31	29	A
Power Dissipation (Max)	400	255	250	W
Rds On (Max) @ 10V	130 @ 22A	105 @ 18A	105 @ 14.5A	mOhm
Gate Charge (Qg) @ 10V	330	80	80	nC
Input Capacitance (Ciss)	8900 @ 25V	2800 @ 100V	2722 @ 100V	pF
Vgs(th) (Max)	4.5 @ 4mA	3.5 @ 1.2mA	4 @ 250µA	V
Vgs (Max)	±20	±20	±25	V
Operating Temperature Range	-55 to 150	-40 to 150	—	°C
Package / Case	TO-247-3	TO-247-3	TO-247-3	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—
Product Status	Active	Active	Active	—

Engineering Selection Recommendations

IXFR44N60 (Primary Part) The IXFR44N60 remains the optimal selection for applications requiring the full 38A continuous drain current and 400W power dissipation. This part is Active status, ROHS3 compliant, and available in high inventory (936 pcs). The HiPerFET™ series technology provides established performance characteristics for high-voltage switching applications.

IPW60R099CPAFKSA1 (Infineon Technologies) This substitute is suitable for applications where continuous drain current requirements do not exceed 31A and power dissipation does not exceed 255W. The IPW60R099CPAFKSA1 offers superior switching characteristics (80 nC gate charge versus 330 nC) and lower input capacitance (2800 pF versus 8900 pF), resulting in reduced switching losses. This part carries AEC-Q101 automotive qualification and is ROHS3 compliant. Operating temperature range is -40°C to 150°C, which does not extend to the -55°C minimum of the IXFR44N60. Inventory availability is 951 pcs.

STW34NM60N (STMicroelectronics) This substitute is suitable for applications where continuous drain current requirements do not exceed 29A and power dissipation does not exceed 250W. The STW34NM60N offers equivalent switching characteristics (80 nC gate charge) and comparable input capacitance (2722 pF) to the Infineon part. The MDmesh™ II series technology provides established performance in high-voltage applications. This part is ROHS3 compliant with unlimited moisture sensitivity level (MSL 1). Inventory availability is 4933 pcs, the highest among all three options. Operating temperature specification provided is 150°C maximum; minimum operating temperature is not specified in provided data.

Selection Criteria Summary:

Select IXFR44N60 for applications requiring 38A continuous current or 400W power dissipation
Select IPW60R099CPAFKSA1 for applications requiring automotive qualification (AEC-Q101) with current ≤31A and power ≤255W
Select STW34NM60N for high-volume applications with current ≤29A and power ≤250W, where superior inventory availability is advantageous

Frequently Asked Questions (FAQ)

Q: Can the IPW60R099CPAFKSA1 or STW34NM60N be used as direct replacements for the IXFR44N60?

A: Direct replacement is possible only if the application circuit operates at continuous drain currents ≤31A (for Infineon) or ≤29A (for STMicroelectronics) and power dissipation ≤255W or ≤250W respectively. The reduced current and power ratings of the substitutes must be verified against actual circuit operating conditions. If the application requires the full 38A or 400W capability of the IXFR44N60, substitution is not appropriate.

Q: Are all three parts mechanically compatible?

A: Yes. All three parts use the TO-247-3 package with through-hole mounting, enabling mechanical interchangeability on printed circuit boards designed for this footprint.

Q: What is the impact of lower gate charge in the substitute parts?

A: Lower gate charge (80 nC in substitutes versus 330 nC in IXFR44N60) reduces the charge required to switch the transistor on and off. This results in lower switching losses and potentially faster switching transitions, which can improve overall circuit efficiency. However, gate drive circuit design must remain compatible with the specified Vgs(th) and Vgs(Max) parameters.

Q: Does the IPW60R099CPAFKSA1 operating temperature range of -40°C to 150°C affect substitution suitability?

A: The IPW60R099CPAFKSA1 does not support the -55°C minimum operating temperature of the IXFR44N60. If the application requires operation below -40°C, the Infineon part is not suitable. The STMicroelectronics STW34NM60N minimum operating temperature is not specified in provided data.

Q: What is the significance of the lower input capacitance in the substitute parts?

A: Input capacitance (Ciss) affects gate drive circuit design and switching speed. The substitutes exhibit significantly lower Ciss (2800 pF and 2722 pF versus 8900 pF), which reduces the capacitive load on the gate driver and can improve switching performance. Gate drive circuits designed for the IXFR44N60 will operate with improved performance characteristics when driving the substitute parts.

Q: Are all three parts RoHS3 compliant?

A: Yes. The IXFR44N60, IPW60R099CPAFKSA1, and STW34NM60N are all ROHS3 compliant and REACH unaffected, meeting environmental regulatory requirements for electronic component manufacturing and use.

Q: Which substitute offers the best inventory availability?

A: The STW34NM60N offers the highest inventory availability at 4933 pcs, compared to 951 pcs for the Infineon part and 936 pcs for the original IXFR44N60. This may be advantageous for high-volume production requirements.

Q: Does the STW34NM60N support higher gate voltage than the other parts?

A: Yes. The STW34NM60N specifies Vgs(Max) of ±25V, compared to ±20V for both the IXFR44N60 and IPW60R099CPAFKSA1. This provides additional margin in gate drive circuit design, though all three parts are compatible with standard 10V gate drive specifications.

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