IXFR44N50Q3 Equivalent & Substitute Parts

Part Overview

The IXFR44N50Q3 is an N-Channel 500V 25A MOSFET manufactured by IXYS in the HiPerFET™ Q3 Class series. This device is packaged in ISOPLUS247™ (TO-247-3) configuration for through-hole mounting applications. The part is currently Active in product status with 1047 units in stock.

Substitute parts are identified based on matching electrical and mechanical parameters within the N-Channel MOSFET category. Alternative devices serve applications where the original part is unavailable, end-of-life, or where design flexibility permits operation within specified parameter ranges.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	25	A (Tc)
Rds On (Max) @ Id, Vgs	154	mOhm @ 22A, 10V
Gate Charge (Qg) (Max) @ Vgs	93	nC @ 10V
Power Dissipation (Max)	300	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package / Case	TO-247-3	Through Hole
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitute parts for the IXFR44N50Q3 are selected based on the following critical parameters:

Primary Matching Criteria:

Drain to Source Voltage (Vdss): 500V or higher
Continuous Drain Current (Id): 21A or higher
Package Type: TO-247-3 through-hole configuration
FET Type: N-Channel MOSFET
Operating Temperature Range: -55°C to 150°C (TJ)

Secondary Compatibility Factors:

Gate Charge (Qg): Lower values indicate faster switching
Rds On (Max): Lower on-resistance reduces power dissipation
Input Capacitance (Ciss): Affects gate drive requirements
Vgs(th) and Vgs (Max): Gate voltage thresholds and limits

Substitutes are grouped into two categories: direct replacements with matching Vdss (500V) and higher-voltage alternatives (550V) that provide additional voltage margin while maintaining compatible current ratings and thermal characteristics.

Parameter Comparison

Parameter	IXFR44N50Q3	IRFP32N50KPBF	IRFP31N50LPBF	STW28NM50N	IPW50R140CPFKSA1	IRFP360PBF
Manufacturer	IXYS	Vishay Siliconix	Vishay Siliconix	STMicroelectronics	Infineon Technologies	Vishay Siliconix
Vdss (V)	500	500	500	500	550	400
Id @ 25°C (A)	25	32	31	21	23	23
Rds On (Max) (mOhm)	154 @ 22A, 10V	160 @ 32A, 10V	180 @ 19A, 10V	158 @ 10.5A, 10V	140 @ 14A, 10V	200 @ 14A, 10V
Qg (Max) (nC)	93 @ 10V	190 @ 10V	210 @ 10V	50 @ 10V	64 @ 10V	210 @ 10V
Ciss (Max) (pF)	4800 @ 25V	5280 @ 25V	5000 @ 25V	1735 @ 25V	2540 @ 100V	4500 @ 25V
Power Dissipation (Max) (W)	300	460	460	150	192	280
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3
Product Status	Active	Active	Active	Active	Last Time Buy	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Substitutes (500V Vdss, Active Status):

IRFP32N50KPBF and IRFP31N50LPBF are the preferred substitutes for the IXFR44N50Q3. Both devices maintain the 500V voltage rating and exceed the 25A current requirement with 32A and 31A ratings respectively. Both parts are Active in product status with substantial inventory availability (7245 and 6841 units). These devices provide higher power dissipation capability (460W) compared to the original part (300W), enabling thermal margin in high-power applications. Gate charge specifications (190 nC and 210 nC) are higher than the original, requiring consideration in gate drive circuit design.

Alternative Substitute (500V Vdss, Active Status):

STW28NM50N from STMicroelectronics operates at 500V with 21A continuous current rating, slightly below the original 25A specification. This device features the lowest gate charge (50 nC) and input capacitance (1735 pF) among all substitutes, resulting in faster switching characteristics and reduced gate drive power requirements. Power dissipation is limited to 150W, restricting use to lower-power applications. Product status is Active with 15210 units in inventory.

Higher-Voltage Alternative (550V Vdss, Last Time Buy Status):

IPW50R140CPFKSA1 from Infineon Technologies provides 550V voltage rating with 23A continuous current and 192W power dissipation. This device exhibits the lowest on-resistance (140 mOhm) and moderate gate charge (64 nC). Product status is Last Time Buy, indicating limited future availability. This part is suitable for applications requiring voltage margin above 500V.

Lower-Voltage Alternative (400V Vdss, Active Status):

IRFP360PBF operates at 400V with 23A continuous current. This device is not recommended as a direct substitute due to reduced voltage rating. Use is limited to applications where maximum operating voltage does not exceed 400V. Product status is Active with highest inventory availability (18295 units).

Frequently Asked Questions (FAQ)

Q: Can IRFP32N50KPBF directly replace IXFR44N50Q3 in existing designs?

A: IRFP32N50KPBF is mechanically and electrically compatible as a substitute. Both devices use TO-247-3 packaging and operate within the same temperature range (-55°C to 150°C). The 32A current rating exceeds the original 25A specification. Gate charge is higher (190 nC vs. 93 nC), requiring verification that gate drive circuits can supply the additional charge without exceeding maximum gate voltage limits (±30V for both devices).

Q: What is the difference between the 500V and 550V rated substitutes?

A: IPW50R140CPFKSA1 (550V) provides 50V additional voltage margin compared to the original 500V rating. This higher rating accommodates transient overvoltage conditions in switching applications. The 550V device has lower on-resistance (140 mOhm) and gate charge (64 nC), improving efficiency and switching speed. However, product status is Last Time Buy, limiting long-term availability.

Q: Why does STW28NM50N have significantly lower gate charge?

A: STW28NM50N features MDmesh™ II technology with optimized gate structure, resulting in 50 nC gate charge compared to 93 nC for the original part. Lower gate charge reduces switching losses and gate drive power consumption. However, continuous current rating (21A) is below the original specification (25A), and power dissipation is limited to 150W, restricting application scope.

Q: Are all substitute parts RoHS3 compliant?

A: All listed substitutes are RoHS3 compliant. IRFP32N50KPBF has REACH Status listed as REACH Affected, while all other substitutes and the original part are REACH Unaffected. Verify REACH compliance requirements for your specific application and supply chain.

Q: What is the impact of higher input capacitance on circuit design?

A: IRFP32N50KPBF and IRFP31N50LPBF have input capacitance (Ciss) of 5280 pF and 5000 pF respectively, compared to 4800 pF for the original part. Higher capacitance increases gate charge and switching time, requiring gate drive circuits with sufficient current capability. STW28NM50N (1735 pF) and IPW50R140CPFKSA1 (2540 pF) have significantly lower capacitance, enabling faster switching with reduced gate drive requirements.

Q: Can IRFP360PBF be used as a substitute?

A: IRFP360PBF operates at 400V, which is 100V below the original 500V rating. This device is not suitable as a direct substitute for applications requiring 500V voltage withstand capability. Use is restricted to circuits where maximum operating voltage does not exceed 400V. The 23A current rating and 280W power dissipation are within acceptable ranges for lower-voltage applications.

Q: What inventory considerations should guide part selection?

A: IRFP32N50KPBF (7245 units) and IRFP31N50LPBF (6841 units) have substantial inventory availability. STW28NM50N (15210 units) and IRFP360PBF (18295 units) have the highest stock levels. IPW50R140CPFKSA1 (1083 units) has lower availability and Last Time Buy status, indicating future supply constraints. For long-term production requirements, prioritize Active status parts with higher inventory levels.

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