IXFR36N60P N-Channel 600V 20A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFR36N60P is an N-Channel 600V, 20A continuous drain current MOSFET manufactured by IXYS in the HiPerFET™ series. This device is packaged in ISOPLUS247™ (TO-247-3) through-hole configuration and is rated for 208W maximum power dissipation. The part is currently Active in product status with full RoHS3 compliance and unlimited moisture sensitivity rating.

Substitute parts are identified for applications requiring equivalent voltage and current handling capabilities, particularly when the primary part is unavailable, when alternative packaging formats are preferred, or when design optimization for specific electrical characteristics is necessary.

Substiute Parts

IXFR36N60P

IXYSIn Stock: 2514IXFR36N60P Datasheet

Current PartRFQ

FCH170N60

Fairchild SemiconductorIn Stock: 1380FCH170N60 Datasheet

SimilarRFQ

R6024KNZ1C9

Rohm SemiconductorIn Stock: 1467R6024KNZ1C9 Datasheet

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STW26NM60N

STMicroelectronicsIn Stock: 65181STW26NM60N Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IXFR36N60P are selected based on the following critical parameters that must remain within acceptable operating ranges:

Primary Matching Criteria:

• Drain to Source Voltage (Vdss): 600V (exact match required)
• FET Type: N-Channel (exact match required)
• Technology: MOSFET Metal Oxide (exact match required)
• Package Type: TO-247-3 through-hole configuration (exact match required)
• Operating Temperature Range: -55°C to 150°C minimum (exact match required)

Secondary Compatibility Parameters:

• Continuous Drain Current (Id): 20A or greater
• On-State Resistance (Rds On): Lower or equal values preferred for thermal performance
• Gate Charge (Qg): Lower values reduce switching losses
• Input Capacitance (Ciss): Lower values reduce gate drive requirements
• Maximum Gate Voltage (Vgs Max): ±20V or greater

All substitute parts listed maintain the 600V voltage rating, N-Channel configuration, and TO-247-3 package format. Variations in current rating, on-state resistance, and gate charge reflect different semiconductor technologies and manufacturing processes while preserving functional equivalence for the primary application.

Parameter Comparison

Engineering Selection Recommendations

IXFR36N60P (Primary Part) The IXFR36N60P remains the preferred selection for new designs. This part is Active in product status with confirmed RoHS3 compliance and REACH unaffected status. The device offers 2440 pieces in current inventory. The HiPerFET™ series technology provides established performance characteristics with a maximum gate voltage rating of ±30V, suitable for robust gate drive circuits.

FCH170N60 (Fairchild Semiconductor) The FCH170N60 is an Active product suitable for direct substitution. This SuperFET® II device provides 22A continuous drain current with improved on-state resistance (170 mOhm) compared to the IXFR36N60P. Gate charge is significantly lower at 55 nC, reducing switching losses. The maximum gate voltage is limited to ±20V. This part is available with 1350 pieces in inventory. RoHS3 compliance status is not specified in available documentation.

R6024KNZ1C9 (Rohm Semiconductor) The R6024KNZ1C9 is classified as Obsolete in product status. While this part offers the highest continuous drain current (24A) and lowest on-state resistance (165 mOhm) among the substitutes, its obsolete status presents long-term supply chain risk. The part is RoHS3 compliant with 1427 pieces currently in inventory. This device is suitable only for legacy system maintenance or short-term production runs where supply continuity is not critical.

STW26NM60N (STMicroelectronics) The STW26NM60N is an Active product with the lowest power dissipation rating (140W) among all listed devices. The MDmesh™ II technology provides excellent on-state resistance (165 mOhm) and low gate charge (60 nC). This part maintains ±30V maximum gate voltage compatibility with the IXFR36N60P. Inventory availability is highest at 65100 pieces. RoHS3 compliance is confirmed. The lower power dissipation rating may require thermal design verification for applications demanding the full 208W capability of the IXFR36N60P.

Selection Priority for New Designs:

1. IXFR36N60P (primary specification match)
2. STW26NM60N (Active status, high inventory, RoHS3 compliant, ±30V gate voltage)
3. FCH170N60 (Active status, improved electrical performance, lower gate charge)

Selection Priority for Legacy System Support:

1. IXFR36N60P (if available)
2. STW26NM60N (Active status, best long-term availability)
3. FCH170N60 (Active status, secondary option)

Frequently Asked Questions (FAQ)

Q: Can the FCH170N60 directly replace the IXFR36N60P in existing designs?

A: The FCH170N60 is electrically compatible for most applications. Both devices share the 600V Vdss rating, TO-247-3 package, and -55°C to 150°C operating temperature range. The FCH170N60 provides higher continuous drain current (22A vs 20A) and lower on-state resistance (170 mOhm vs 200 mOhm). However, the maximum gate voltage is reduced from ±30V to ±20V. Gate drive circuits designed for ±30V operation must be verified for ±20V compatibility. Gate charge is significantly lower (55 nC vs 102 nC), which may reduce switching losses but requires verification that gate drive circuits can accommodate the faster switching transients.

Q: Why is the R6024KNZ1C9 listed as Obsolete?

A: The R6024KNZ1C9 is classified as Obsolete in product status according to manufacturer documentation. Obsolete parts are no longer in active production and may have limited availability through authorized distributors. While current inventory of 1427 pieces exists, future procurement cannot be guaranteed. This part should be used only for maintenance of existing systems or short-term production runs where alternative parts cannot be qualified.

Q: What is the difference between the IXFR36N60P and STW26NM60N in terms of thermal performance?

A: The IXFR36N60P is rated for 208W maximum power dissipation, while the STW26NM60N is rated for 140W. This difference reflects different thermal characteristics of the semiconductor die and package design. The STW26NM60N achieves lower on-state resistance (165 mOhm vs 200 mOhm), which reduces conduction losses. However, the lower power dissipation rating indicates reduced thermal capacity. Applications requiring sustained operation near 200W must use the IXFR36N60P or verify that the STW26NM60N thermal design is adequate for the specific duty cycle.

Q: Are all substitute parts RoHS3 compliant?

A: The IXFR36N60P, R6024KNZ1C9, and STW26NM60N are confirmed RoHS3 compliant. The FCH170N60 RoHS3 compliance status is not specified in the provided documentation. For applications requiring RoHS3 certification, the IXFR36N60P, R6024KNZ1C9, or STW26NM60N are recommended. Verification with the FCH170N60 manufacturer is required if RoHS3 compliance is mandatory.

Q: What is the impact of different gate charge values on circuit design?

A: Gate charge (Qg) determines the total charge required to switch the MOSFET from off to on state. The IXFR36N60P requires 102 nC, while substitutes range from 45 nC (R6024KNZ1C9) to 60 nC (STW26NM60N). Lower gate charge reduces the energy required for switching and allows faster switching transitions. Gate drive circuits must supply sufficient current to charge the gate within the required switching time. Circuits designed for the IXFR36N60P's 102 nC specification will operate with lower switching losses when using lower gate charge substitutes, but faster switching may increase electromagnetic interference (EMI) if not properly managed.

Q: Can the IXFR36N60P be used in applications originally designed for the STW26NM60N?

A: Yes, the IXFR36N60P can replace the STW26NM60N. The IXFR36N60P provides higher power dissipation capability (208W vs 140W) and higher on-state resistance (200 mOhm vs 165 mOhm). The higher on-state resistance results in increased conduction losses, which may require thermal design verification. Both devices share the 600V Vdss rating, TO-247-3 package, and ±30V maximum gate voltage. Gate charge is higher on the IXFR36N60P (102 nC vs 60 nC), which may increase switching losses slightly.

Q: What packaging considerations apply to these substitute parts?

A: All listed parts use the TO-247-3 through-hole package format, ensuring mechanical and electrical compatibility. The IXFR36N60P and STW26NM60N are supplied in Tube packaging, while the FCH170N60 is supplied in Bulk packaging and the R6024KNZ1C9 is supplied in Tube packaging. Packaging format affects handling, storage, and automated assembly processes but does not impact electrical performance or thermal characteristics. PCB layout and heatsink mounting are identical across all TO-247-3 devices.

Q: Are there any gate voltage limitations when substituting parts?

A: The IXFR36N60P and STW26NM60N support ±30V maximum gate voltage, while the FCH170N60 and R6024KNZ1C9 support ±20V maximum gate voltage. Gate drive circuits designed for ±30V operation must be verified for compatibility with ±20V-rated devices. Exceeding the maximum gate voltage rating can cause permanent gate oxide damage. If the original design uses ±30V gate drive signals, the FCH170N60 and R6024KNZ1C9 are not suitable without gate drive circuit modification.