IXFR36N50P Equivalent & Substitute Parts

Part Overview

The IXFR36N50P is an N-Channel MOSFET manufactured by IXYS, rated for 500V drain-to-source voltage with 19A continuous drain current at 25°C. This device is packaged in the ISOPLUS247™ form factor and is designed for high-voltage switching applications requiring through-hole mounting. The part is Active in product status with full RoHS3 compliance and unlimited moisture sensitivity rating.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter tolerances while maintaining compatible mechanical packaging and thermal characteristics. Alternative devices may be required due to inventory availability, lead time considerations, or application-specific performance optimization.

Substiute Parts

IXFR36N50P

IXYSIn Stock: 2170IXFR36N50P Datasheet

Current PartRFQ

STW28NM50N

STMicroelectronicsIn Stock: 15231STW28NM50N Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for N-Channel MOSFETs in the 500V class is determined by the following critical parameters:

Voltage Rating Compatibility: The drain-to-source voltage (Vdss) must equal or exceed 500V. Both the main part and substitute maintain this specification.

Current Capacity: The continuous drain current (Id) at 25°C must support the application requirements. The IXFR36N50P specifies 19A; substitute parts with equal or higher current ratings are functionally compatible.

On-State Resistance (Rds On): This parameter directly affects conduction losses and thermal performance. Devices with lower Rds On values provide improved efficiency and reduced heat dissipation.

Gate Charge (Qg): Lower gate charge reduces switching losses and driver power requirements, improving overall circuit efficiency.

Input Capacitance (Ciss): This parameter influences gate drive circuit design and switching speed. Variations in Ciss affect the gate driver's current requirements.

Thermal Rating: Power dissipation capability must be adequate for the application. Devices with comparable or higher thermal ratings ensure safe operation.

Package Compatibility: Both devices utilize TO-247-3 through-hole packaging, ensuring mechanical and thermal interface compatibility.

Compliance Status: All substitute parts must maintain RoHS3 compliance and equivalent regulatory certifications.

Parameter Comparison

Engineering Selection Recommendations

IXFR36N50P Selection Criteria:

The IXFR36N50P remains the primary choice for applications requiring the specified electrical characteristics within the IXYS HiPerFET™ series. This device is Active in product status with confirmed inventory availability of 2104 pieces. The part maintains full RoHS3 compliance and REACH unaffected status, suitable for regulated markets. The ±30V maximum gate voltage specification provides additional margin for gate drive circuit design.

STW28NM50N Substitute Criteria:

The STW28NM50N from STMicroelectronics serves as a functional equivalent for applications where the following conditions are met:

The substitute provides higher continuous drain current (21A versus 19A), enabling operation at higher current levels without derating.

The STW28NM50N exhibits lower on-state resistance (158 mOhm versus 190 mOhm), resulting in reduced conduction losses and improved thermal efficiency.

Gate charge is significantly lower (50 nC versus 93 nC), reducing switching losses and gate driver power consumption.

Input capacitance is substantially lower (1735 pF versus 5500 pF), improving switching speed and reducing gate drive circuit complexity.

Both devices maintain identical 500V voltage rating and TO-247-3 packaging, ensuring direct mechanical and thermal compatibility.

Both devices are Active in product status with RoHS3 compliance and unlimited moisture sensitivity rating.

The STW28NM50N has higher inventory availability (15210 pieces), supporting supply chain flexibility.

Compatibility Constraints:

The STW28NM50N maximum gate voltage is ±25V compared to ±30V for the IXFR36N50P. Applications utilizing gate drive voltages exceeding ±25V require the main part.

The STW28NM50N maximum operating temperature specification does not include the lower bound; applications requiring -55°C operation should verify thermal performance with the substitute.

Frequently Asked Questions (FAQ)

Q: Can the STW28NM50N directly replace the IXFR36N50P in existing designs?

A: Direct replacement is possible when the application operates within the STW28NM50N parameter envelope. The TO-247-3 package ensures mechanical compatibility. Verify that gate drive voltage does not exceed ±25V and that the lower operating temperature requirement does not mandate -55°C operation. The improved electrical characteristics (lower Rds On, lower gate charge, lower input capacitance) typically provide performance benefits.

Q: What are the thermal implications of substitution?

A: The STW28NM50N exhibits lower on-state resistance (158 mOhm versus 190 mOhm), reducing conduction losses and heat generation. Power dissipation rating is 150W versus 156W for the main part. In most applications, the lower conduction losses offset the slightly lower thermal rating, resulting in improved thermal performance.

Q: How do gate charge differences affect circuit design?

A: The STW28NM50N gate charge is 50 nC compared to 93 nC for the IXFR36N50P. Lower gate charge reduces the energy required per switching cycle, decreasing gate driver power consumption and enabling faster switching transitions. Existing gate drive circuits designed for the IXFR36N50P will operate with improved performance margins when driving the STW28NM50N.

Q: Are there input capacitance considerations for substitution?

A: The STW28NM50N input capacitance is 1735 pF versus 5500 pF for the main part. Lower input capacitance reduces the gate driver's current requirements during switching transitions and improves switching speed. Gate drive circuits designed for the higher capacitance of the IXFR36N50P will experience reduced stress and improved performance with the substitute.

Q: What packaging considerations apply to these devices?

A: Both the IXFR36N50P and STW28NM50N utilize the TO-247-3 through-hole package. Mechanical mounting, PCB layout, and thermal interface requirements are identical. No design modifications are required for package compatibility.

Q: Are both devices suitable for regulated applications?

A: Both devices maintain RoHS3 compliance and REACH unaffected status, meeting regulatory requirements for most markets. Moisture sensitivity level is 1 (Unlimited) for both parts, indicating no special handling requirements during storage or assembly.

Q: What is the maximum gate voltage for each device?

A: The IXFR36N50P supports ±30V maximum gate voltage, while the STW28NM50N supports ±25V. Applications utilizing gate drive circuits that exceed ±25V require the main part to ensure reliable operation within specified limits.

Q: How do the devices compare in terms of switching performance?

A: The STW28NM50N provides superior switching performance due to lower gate charge (50 nC versus 93 nC) and significantly lower input capacitance (1735 pF versus 5500 pF). These characteristics enable faster switching transitions and reduced switching losses, benefiting high-frequency applications.