IXFR34N80 N-Channel 800V 28A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFR34N80 is an N-Channel 800V 28A MOSFET manufactured by IXYS in the HiPerFET™ series, housed in the ISOPLUS247™ package (TO-247-3 form factor). This device is rated for 416W power dissipation and operates across the temperature range of -55°C to 150°C. The part is currently classified as obsolete, making identification of functionally equivalent alternatives essential for design continuity, maintenance, and new production applications requiring this performance class.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	800	V
Continuous Drain Current (Id) @ 25°C	28	A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs	240 mOhm @ 17A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id	4	V @ 8mA
Gate Charge (Qg Max) @ Vgs	270	nC @ 10V
Input Capacitance (Ciss Max) @ Vds	7500	pF @ 25V
Power Dissipation (Max)	416	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-247-3	Through Hole
Gate Voltage (Vgs Max)	±20	V

Substitute Part Grouping Explanation

Substitution of the IXFR34N80 is determined by strict alignment of the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): Must equal 800V
Package Type: Must be TO-247-3 or compatible ISOPLUS247™ variant
FET Type: Must be N-Channel MOSFET
Mounting: Must be Through Hole

Secondary Compatibility Parameters:

Continuous Drain Current (Id): Substitute must meet or exceed 28A at 25°C
On-State Resistance (Rds On): Lower or equal values indicate improved performance
Gate Charge (Qg): Lower values reduce switching losses
Operating Temperature: Must support -55°C to 150°C range
Power Dissipation: Must support thermal requirements of the application

Substitutes are grouped by their ability to meet these criteria while maintaining electrical and mechanical compatibility within the same voltage class and package family.

Parameter Comparison

Parameter	IXFR34N80	IXFR44N80P	APT38F80B2	STW18NM80	STW25N80K5
Manufacturer	IXYS	IXYS	Microchip Technology	STMicroelectronics	STMicroelectronics
Vdss (V)	800	800	800	800	800
Id @ 25°C (A)	28	25	41	17	19.5
Rds On Max @ Id, Vgs (mOhm)	240 @ 17A, 10V	200 @ 22A, 10V	240 @ 20A, 10V	295 @ 8.5A, 10V	260 @ 19.5A, 10V
Vgs(th) Max @ Id (V)	4 @ 8mA	5 @ 8mA	5 @ 2.5mA	5 @ 250µA	5 @ 100µA
Qg Max @ Vgs (nC)	270 @ 10V	200 @ 10V	260 @ 10V	70 @ 10V	40 @ 10V
Ciss Max @ Vds (pF)	7500 @ 25V	12000 @ 25V	8070 @ 25V	2070 @ 50V	1600 @ 100V
Power Dissipation Max (W)	416	300	1040	190	250
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	to 150	-55 to 150
Package	TO-247-3 (ISOPLUS247™)	TO-247-3 (ISOPLUS247™)	TO-247-3 Variant (T-MAX™)	TO-247-3	TO-247-3
Product Status	Obsolete	Active	Active	Active	Active
RoHS Status	REACH Unaffected	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IXFR44N80P (IXYS)

The IXFR44N80P is an active-status alternative from the same manufacturer (IXYS) within the HiPerFET™ series. It maintains identical voltage rating (800V) and package format (ISOPLUS247™ TO-247-3). The continuous drain current is rated at 25A, which is lower than the IXFR34N80's 28A specification. On-state resistance is improved at 200 mOhm, and gate charge is reduced to 200 nC, resulting in lower switching losses. Power dissipation is rated at 300W, which is lower than the original 416W. This part is ROHS3 compliant and carries unlimited moisture sensitivity level (MSL 1). Selection of this part is appropriate for applications where the 25A current rating is sufficient and thermal dissipation requirements do not exceed 300W.

APT38F80B2 (Microchip Technology)

The APT38F80B2 is manufactured by Microchip Technology in the POWER MOS 8™ series and offers the highest continuous drain current rating at 41A. Voltage rating matches at 800V, and the package is a TO-247-3 variant (T-MAX™ [B2]). On-state resistance is 240 mOhm at 20A, matching the IXFR34N80 specification. Power dissipation capability is significantly higher at 1040W, providing substantial thermal headroom. Gate charge is 260 nC, comparable to the original part. This device is ROHS3 compliant with MSL 1 rating. Selection of this part is appropriate for applications requiring higher current capacity or greater thermal dissipation capability than the original IXFR34N80.

STW18NM80 (STMicroelectronics)

The STW18NM80 is manufactured by STMicroelectronics in the MDmesh™ series with an active product status. Voltage rating is 800V in standard TO-247-3 package. The continuous drain current is 17A, which is lower than the IXFR34N80. On-state resistance is 295 mOhm at 8.5A, representing higher resistance than the original part. Gate charge is significantly reduced to 70 nC, and input capacitance is substantially lower at 2070 pF, indicating improved switching characteristics. Power dissipation is rated at 190W. This part is ROHS3 compliant with MSL 1 rating. Selection of this part is appropriate only for applications where current requirements do not exceed 17A and thermal dissipation is limited to 190W or less.

STW25N80K5 (STMicroelectronics)

The STW25N80K5 is manufactured by STMicroelectronics in the SuperMESH5™ series with active product status. Voltage rating is 800V in standard TO-247-3 package. The continuous drain current is 19.5A, lower than the IXFR34N80's 28A. On-state resistance is 260 mOhm at 19.5A. Gate charge is significantly reduced to 40 nC, and input capacitance is very low at 1600 pF, indicating superior switching performance. Power dissipation is rated at 250W. This part is ROHS3 compliant with MSL 1 rating and supports the full -55°C to 150°C temperature range. Selection of this part is appropriate for applications where current requirements do not exceed 19.5A and switching efficiency is prioritized.

Frequently Asked Questions (FAQ)

Q: Can the IXFR44N80P directly replace the IXFR34N80 in all applications?

A: The IXFR44N80P shares the same manufacturer, voltage rating, and package type. However, the continuous drain current is rated at 25A versus the IXFR34N80's 28A, and power dissipation is 300W versus 416W. Direct replacement is possible only if the application's current and thermal requirements do not exceed these lower ratings. Verify that peak and continuous current demands remain below 25A and that thermal dissipation does not exceed 300W.

Q: Why does the APT38F80B2 have higher power dissipation than the IXFR34N80?

A: The APT38F80B2 is rated for 41A continuous drain current compared to the IXFR34N80's 28A. Higher current capacity results in higher absolute power dissipation capability (1040W versus 416W). This does not mean the device will dissipate more power in a given application; rather, it can safely handle higher power levels if required by the circuit design.

Q: Are all substitute parts ROHS3 compliant?

A: The IXFR34N80 is listed as REACH Unaffected. All four substitute parts (IXFR44N80P, APT38F80B2, STW18NM80, and STW25N80K5) are ROHS3 compliant with MSL 1 (Unlimited) moisture sensitivity level, making them suitable for modern manufacturing environments.

Q: What is the significance of lower gate charge in the STW25N80K5 and STW18NM80?

A: Gate charge (Qg) directly affects switching speed and driver circuit requirements. The STW25N80K5 (40 nC) and STW18NM80 (70 nC) have significantly lower gate charge compared to the IXFR34N80 (270 nC). Lower gate charge reduces switching losses and allows faster switching transitions, which can improve overall circuit efficiency. However, this requires verification that the gate driver circuit can accommodate the different charge requirements.

Q: Can I use the STW18NM80 if my application requires 28A continuous current?

A: No. The STW18NM80 is rated for only 17A continuous drain current at 25°C. Using this device in an application requiring 28A would exceed its electrical rating and result in device failure or reduced reliability. Current requirements must be met or exceeded by the substitute part.

Q: What is the difference between ISOPLUS247™ and standard TO-247-3 packages?

A: ISOPLUS247™ is IXYS's proprietary designation for their TO-247-3 package variant. All substitute parts listed use standard TO-247-3 or compatible variants (such as the T-MAX™ [B2] used by Microchip). These packages are mechanically and electrically compatible for through-hole mounting applications, though PCB layout and thermal management considerations may vary slightly between manufacturers.

Q: Which substitute part is the best overall replacement for the IXFR34N80?

A: Selection depends on application requirements. The IXFR44N80P is the closest match from the same manufacturer with active status. The APT38F80B2 offers superior current and thermal capacity. The STW25N80K5 provides excellent switching efficiency with lower gate charge. The STW18NM80 is suitable only for lower-current applications. Evaluate your specific current, thermal, and switching requirements against each part's ratings.

Q: Are there any temperature range limitations I should consider?

A: The IXFR34N80, IXFR44N80P, APT38F80B2, and STW25N80K5 all support the full -55°C to 150°C operating range. The STW18NM80 specification indicates operation to 150°C but does not explicitly state the lower temperature limit. Verify the complete temperature range requirement for your application before selecting this part.

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