IXFR32N100P N-Channel 1000V 18A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFR32N100P is an N-Channel MOSFET manufactured by IXYS, rated for 1000V drain-to-source voltage with 18A continuous drain current at 25°C. This device is packaged in the ISOPLUS247™ through-hole format and is designed for high-voltage switching applications requiring robust thermal performance up to 320W at the case temperature. The part is Active status and ROHS3 compliant.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges while maintaining compatibility with through-hole mounting requirements and voltage/current ratings.

Substiute Parts

IXFR32N100P

IXYSIn Stock: 1013IXFR32N100P Datasheet

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APT17F100B

Microchip TechnologyIn Stock: 1129APT17F100B Datasheet

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APT18M100B

Microchip TechnologyIn Stock: 820APT18M100B Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IXFR32N100P are qualified based on the following criteria:

Electrical Compatibility Requirements:

• Drain to Source Voltage (Vdss): 1000V (exact match required)
• FET Type: N-Channel (exact match required)
• Technology: MOSFET (Metal Oxide) (exact match required)
• Current - Continuous Drain (Id) @ 25°C: 17A or higher
• Drive Voltage (Max Rds On): 10V (exact match required)
• Vgs (Max): ±30V (exact match required)
• Operating Temperature Range: -55°C to 150°C (exact match required)

Mechanical Compatibility Requirements:

• Mounting Type: Through Hole (exact match required)
• Package / Case: TO-247-3 (exact match required)

Compliance Requirements:

• RoHS Status: ROHS3 Compliant
• Product Status: Active

The substitute parts APT17F100B and APT18M100B meet all electrical and mechanical compatibility criteria. Both devices are manufactured by Microchip Technology and maintain the same voltage rating, gate voltage specifications, and operating temperature range as the IXFR32N100P.

Parameter Comparison

Engineering Selection Recommendations

IXFR32N100P (Primary Part)

The IXFR32N100P is the primary selection when the specific electrical characteristics of the IXYS HiPerFET™ series are required. This device offers the lowest on-resistance specification at the rated current and gate voltage (340 mOhm @ 16A, 10V), making it suitable for applications where conduction losses must be minimized. The part is Active status and ROHS3 compliant with unlimited moisture sensitivity level.

APT18M100B (Preferred Substitute)

The APT18M100B is the preferred substitute when direct current rating equivalence is required. This Microchip Technology device matches the 18A continuous drain current specification of the IXFR32N100P while maintaining identical voltage ratings and operating temperature range. The APT18M100B is Active status and ROHS3 compliant. The higher power dissipation rating (625W vs. 320W) provides additional thermal margin in applications with elevated ambient temperatures or extended duty cycles.

APT17F100B (Alternative Substitute)

The APT17F100B is an alternative substitute when a 1A reduction in continuous drain current is acceptable for the application. This device is rated for 17A continuous drain current and shares all other critical electrical parameters with the primary part. The APT17F100B is Active status and ROHS3 compliant with the same thermal and voltage specifications as the APT18M100B.

All substitute parts maintain TO-247-3 through-hole packaging compatibility and identical gate voltage specifications (±30V maximum), ensuring direct mechanical and electrical interchangeability within the specified parameter constraints.

Frequently Asked Questions (FAQ)

Q: Can the APT17F100B be used as a direct replacement for the IXFR32N100P?

A: The APT17F100B is electrically compatible with the IXFR32N100P for applications where the continuous drain current requirement does not exceed 17A. Both devices share identical 1000V voltage ratings, ±30V gate voltage specifications, and -55°C to 150°C operating temperature ranges. The primary difference is the 1A reduction in continuous drain current rating. Mechanical compatibility is confirmed through identical TO-247-3 packaging.

Q: What is the difference between the APT17F100B and APT18M100B?

A: Both devices are Microchip Technology N-Channel 1000V MOSFETs in TO-247-3 packaging. The APT18M100B is rated for 18A continuous drain current, matching the IXFR32N100P specification, while the APT17F100B is rated for 17A. The APT18M100B has a lower on-resistance specification (700 mOhm @ 9A, 10V) compared to the APT17F100B (800 mOhm @ 9A, 10V). Both devices share identical gate charge, input capacitance, and power dissipation ratings.

Q: Are there package compatibility concerns when substituting these parts?

A: No. All three devices use TO-247-3 through-hole packaging. The IXFR32N100P uses the ISOPLUS247™ supplier package designation, while the Microchip devices use the TO-247 [B] designation. Both designations conform to the TO-247-3 case outline, ensuring mechanical interchangeability in PCB layouts and socket configurations.

Q: How do the on-resistance specifications compare?

A: The IXFR32N100P specifies 340 mOhm maximum on-resistance at 16A and 10V gate voltage. The APT18M100B specifies 700 mOhm at 9A and 10V, while the APT17F100B specifies 800 mOhm at 9A and 10V. The IXFR32N100P exhibits lower on-resistance at higher current levels, which reduces conduction losses in high-current applications.

Q: What are the compliance and regulatory considerations?

A: All three devices are ROHS3 compliant and carry Active product status. The IXFR32N100P has unlimited moisture sensitivity level (MSL 1), as do the Microchip substitutes. All devices are REACH unaffected and classified under ECCN EAR99 with HTSUS code 8541.29.0095.

Q: Can these parts be used interchangeably in existing designs?

A: Interchangeability depends on the specific application current requirements and thermal design. The APT18M100B provides direct current rating equivalence with the IXFR32N100P. The APT17F100B is suitable for applications where 17A continuous drain current is sufficient. Both Microchip devices offer higher power dissipation ratings (625W vs. 320W), which may improve thermal performance in thermally constrained designs.