IXFR30N60P N-Channel 600V 15A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFR30N60P is an N-Channel 600V 15A MOSFET manufactured by IXYS in the HiPerFET™ series. This device is housed in an ISOPLUS247™ package (TO-247-3 form factor) and is designed for through-hole mounting applications requiring high-voltage switching capability. The part is currently Active in product status with 2400 units in stock.

Substitute parts become necessary when the primary device is unavailable, when procurement lead times are extended, or when design flexibility across multiple suppliers is required. The substitute devices listed below maintain electrical compatibility within the specified parameter tolerances while offering alternative sourcing options from STMicroelectronics.

Substiute Parts

IXFR30N60P

IXYSIn Stock: 2427IXFR30N60P Datasheet

Current PartRFQ

STW18N60M2

STMicroelectronicsIn Stock: 1362STW18N60M2 Datasheet

SimilarRFQ

STW18NM60N

STMicroelectronicsIn Stock: 1804STW18NM60N Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IXFR30N60P is determined by the following critical parameters:

Voltage Rating Requirement: All substitute devices must maintain a Drain to Source Voltage (Vdss) rating of 600V to ensure safe operation in the intended application circuit.

Package Compatibility: All substitute devices must use the TO-247-3 through-hole package to ensure mechanical and thermal compatibility with existing PCB layouts and heatsink mounting configurations.

Operating Temperature Range: All substitute devices must support the full operating temperature range of -55°C to 150°C (TJ).

Regulatory Compliance: All substitute devices must maintain ROHS3 compliance and REACH unaffected status to satisfy environmental and regulatory requirements.

The substitute devices listed below meet these core substitution criteria. However, the IXFR30N60P delivers 15A continuous drain current, while the STMicroelectronics alternatives deliver 13A. This represents a current derating of approximately 13% and must be evaluated against application requirements.

Parameter Comparison

Engineering Selection Recommendations

Primary Selection: The IXFR30N60P remains the primary choice when available. This device delivers the highest continuous drain current (15A) and power dissipation rating (166W), providing maximum design margin for high-current switching applications.

Substitute Selection - STW18N60M2: This STMicroelectronics device is suitable for applications where the 13A continuous drain current rating is sufficient. The STW18N60M2 features the lowest gate charge (21.5 nC), which reduces switching losses and improves efficiency in high-frequency switching circuits. This device is ROHS3 compliant and REACH unaffected.

Substitute Selection - STW18NM60N: This STMicroelectronics device is also suitable for applications where the 13A continuous drain current rating is sufficient. The STW18NM60N features moderate gate charge (35 nC) and is ROHS3 compliant and REACH unaffected. This device represents an alternative within the MDmesh™ II series.

Compliance Verification: All listed devices maintain ROHS3 compliance and REACH unaffected status, satisfying environmental and regulatory requirements for commercial and industrial applications.

Frequently Asked Questions (FAQ)

Q: Can the STW18N60M2 or STW18NM60N be used as direct replacements for the IXFR30N60P?

A: Both STMicroelectronics devices are mechanically and electrically compatible within the specified parameter tolerances. However, the continuous drain current is reduced from 15A to 13A. Applications operating at or near the 15A maximum rating require evaluation to confirm that 13A is acceptable for the intended duty cycle and thermal conditions.

Q: What is the primary difference between the STW18N60M2 and STW18NM60N?

A: Both devices deliver identical voltage rating (600V), current rating (13A), and power dissipation (110W). The primary difference is gate charge: the STW18N60M2 features 21.5 nC (lower switching losses), while the STW18NM60N features 35 nC. The STW18N60M2 belongs to the MDmesh™ II Plus series, while the STW18NM60N belongs to the MDmesh™ II series.

Q: Are all substitute devices available in the same package?

A: Yes. The IXFR30N60P, STW18N60M2, and STW18NM60N all use the TO-247-3 through-hole package. No PCB layout modifications are required for mechanical compatibility.

Q: Do the substitute devices support the same operating temperature range?

A: Yes. All devices support the full operating temperature range of -55°C to 150°C (TJ), ensuring thermal compatibility across the specified application environment.

Q: What are the regulatory compliance differences between the main part and substitutes?

A: All devices are ROHS3 compliant and REACH unaffected. No regulatory differences exist between the IXFR30N60P and the listed substitute devices.

Q: How does the gate charge difference affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the device on and off. The STW18N60M2 (21.5 nC) requires less switching energy than the STW18NM60N (35 nC), resulting in lower switching losses and improved efficiency in high-frequency applications. The IXFR30N60P (85 nC) requires the most switching energy.

Q: What is the impact of the reduced current rating on thermal design?

A: The substitute devices deliver 13A versus the IXFR30N60P's 15A. At equivalent current levels, thermal dissipation is proportional to I²R. At 13A, the STMicroelectronics devices dissipate less heat than the IXFR30N60P at 15A, reducing heatsink requirements for applications operating below 13A.