IXFR26N60Q N-Channel 600V 23A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFR26N60Q is an N-Channel 600V 23A MOSFET manufactured by IXYS in the HiPerFET™ series, housed in the ISOPLUS247™ package (TO-247-3). This device is rated for 310W power dissipation and operates across the temperature range of -55°C to 150°C. The part is currently listed as obsolete, making identification of equivalent and substitute components essential for design continuity and procurement planning.

Substitute parts are necessary due to the obsolete status of the IXFR26N60Q. Active alternatives with compatible electrical and mechanical specifications enable system designers to maintain performance requirements while sourcing from current product lines.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	23	A (Tc)
Rds On (Max) @ Id, Vgs	250	mOhm @ 13A, 10V
Gate Charge (Qg) @ Vgs	200	nC @ 10V
Input Capacitance (Ciss) @ Vds	5100	pF @ 25V
Power Dissipation (Max)	310	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-247-3	—
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitution of the IXFR26N60Q is determined by the following critical parameters:

Electrical Compatibility Requirements:

Drain to Source Voltage (Vdss): 600V minimum
Continuous Drain Current (Id): 23A or greater at 25°C
Rds On (Max): 250 mOhm or lower at specified gate voltage
Gate Charge (Qg): 200 nC or lower at 10V
Input Capacitance (Ciss): 5100 pF or lower at 25V
Power Dissipation: 310W or greater
Operating Temperature Range: -55°C to 150°C minimum

Mechanical Compatibility Requirements:

Mounting Type: Through Hole
Package / Case: TO-247-3 (includes ISOPLUS247™ and TO-247AC variants)

Substitute parts are grouped into two categories based on their relationship to the main part specifications:

Category 1: Direct Current Rating Equivalents (23A–26A) Parts with continuous drain current ratings between 23A and 26A, maintaining identical or superior electrical characteristics. These parts provide direct functional replacement with minimal design impact.

Category 2: Enhanced Current Rating Alternatives (25A–36A) Parts with continuous drain current ratings above 26A, offering increased current capacity while maintaining voltage and thermal specifications. These parts provide design margin and are suitable for applications requiring higher current headroom.

Parameter Comparison

Parameter	IXFR26N60Q (Main)	IRFP26N60LPBF	APT6025BLLG	APT6025BVRG	IXFR64N60P	STW19NM60N
Manufacturer	IXYS	Vishay Siliconix	Microchip Technology	Microchip Technology	IXYS	STMicroelectronics
Vdss (V)	600	600	600	600	600	600
Id @ 25°C (A)	23	26	24	25	36	13
Rds On (Max) (mOhm)	250 @ 13A, 10V	250 @ 16A, 10V	250 @ 12A, 10V	250 @ 500mA, 10V	105 @ 32A, 10V	285 @ 6.5A, 10V
Qg (Max) (nC)	200 @ 10V	180 @ 10V	65 @ 10V	275 @ 10V	200 @ 10V	35 @ 10V
Ciss (Max) (pF)	5100 @ 25V	5020 @ 25V	2910 @ 25V	5160 @ 25V	12000 @ 25V	1000 @ 50V
Power Dissipation (W)	310	470	—	—	320	110
Operating Temp (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3
Product Status	Obsolete	Active	Active	Active	Active	Active
RoHS Compliance	—	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3

Engineering Selection Recommendations

Primary Substitute: IRFP26N60LPBF

The IRFP26N60LPBF (Vishay Siliconix) is the closest functional equivalent to the IXFR26N60Q. It matches the 600V voltage rating and 26A continuous drain current, with identical 250 mOhm Rds On specification. Gate charge is lower at 180 nC, and input capacitance is nearly identical at 5020 pF. Power dissipation capability exceeds the original at 470W. The device is active in production, ROHS3 compliant, and housed in the TO-247-3 package. This part is suitable for direct replacement in existing designs.

Secondary Substitute: APT6025BVRG

The APT6025BVRG (Microchip Technology, POWER MOS V® series) provides 25A continuous drain current at 600V with 250 mOhm Rds On. Input capacitance is comparable at 5160 pF. This device is active, ROHS3 compliant, and available in TO-247-3 packaging. It is suitable for applications where the 1A current margin above the original specification is acceptable.

Alternative Substitute: APT6025BLLG

The APT6025BLLG (Microchip Technology, POWER MOS 7® series) offers 24A continuous drain current at 600V with 250 mOhm Rds On. Gate charge is significantly lower at 65 nC, and input capacitance is reduced to 2910 pF, resulting in lower switching losses. This device is active, ROHS3 compliant, and available in TO-247-3 packaging. It is suitable for applications prioritizing reduced switching losses.

Higher Current Alternative: IXFR64N60P

The IXFR64N60P (IXYS, HiPerFET™ series) provides 36A continuous drain current at 600V with superior Rds On of 105 mOhm. This device offers significant design margin for current capacity and is active in production with ROHS3 compliance. It is suitable for applications requiring higher current headroom or where thermal performance is critical.

Lower Current Alternatives: STW19NM60N, STW18NM60N, STW18N60M2

The STMicroelectronics MDmesh™ II series devices (STW19NM60N, STW18NM60N, STW18N60M2) provide 13A continuous drain current at 600V. These devices feature significantly lower gate charge (21.5–35 nC) and reduced input capacitance (791–1000 pF), resulting in lower switching losses and reduced driver requirements. STW19NM60N includes AEC-Q101 automotive qualification. These parts are suitable for applications where the original 23A rating exceeds system requirements and lower switching losses are beneficial.

All recommended substitutes maintain the -55°C to 150°C operating temperature range and TO-247-3 package compatibility with the IXFR26N60Q.

Frequently Asked Questions (FAQ)

Q: Can the IRFP26N60LPBF directly replace the IXFR26N60Q without circuit modifications?

A: Yes. The IRFP26N60LPBF matches the critical electrical parameters: 600V Vdss, 26A continuous drain current, and 250 mOhm Rds On. Both devices use the TO-247-3 package with identical pinout. Gate charge and input capacitance are comparable, requiring no driver circuit changes. The higher power dissipation rating (470W vs. 310W) provides additional thermal margin.

Q: What is the difference between ISOPLUS247™ and TO-247-3 packaging?

A: ISOPLUS247™ is IXYS's proprietary designation for the TO-247-3 package. The physical dimensions, pinout, and thermal characteristics are identical to the standard TO-247-3 package used by other manufacturers. Devices in either designation are mechanically and electrically interchangeable.

Q: Why do the STMicroelectronics alternatives (STW19NM60N, STW18NM60N) have lower current ratings (13A) than the original IXFR26N60Q (23A)?

A: The STMicroelectronics devices are from a different product family (MDmesh™ II) optimized for lower switching losses rather than maximum current capacity. They are suitable only for applications where the 13A rating meets system requirements. For applications requiring 23A or higher, use IRFP26N60LPBF, APT6025BVRG, or IXFR64N60P.

Q: Is the APT6025BLLG suitable for applications requiring the full 23A rating of the IXFR26N60Q?

A: The APT6025BLLG is rated for 24A continuous drain current, which exceeds the 23A requirement of the original part. It is suitable for direct replacement. The lower gate charge (65 nC vs. 200 nC) and reduced input capacitance (2910 pF vs. 5100 pF) provide the additional benefit of reduced switching losses.

Q: What is the significance of the IXFR64N60P having 105 mOhm Rds On compared to 250 mOhm in the original part?

A: Lower Rds On reduces conduction losses and heat generation during operation. The IXFR64N60P's 105 mOhm Rds On results in approximately 58% lower conduction losses at the same current level. This device is suitable for applications where thermal performance or efficiency is critical, or where higher current capacity is required.

Q: Are all substitute parts ROHS3 compliant?

A: All active substitute parts listed (IRFP26N60LPBF, APT6025BLLG, APT6025BVRG, IXFR64N60P, STW19NM60N, STW18NM60N, STW18N60M2) are ROHS3 compliant. The original IXFR26N60Q does not list RoHS compliance status due to its obsolete status.

Q: Can the IXFR64N60P be used in place of the IXFR26N60Q if the application only requires 23A?

A: Yes. The IXFR64N60P is rated for 36A continuous drain current, which exceeds the 23A requirement. All other electrical parameters (600V Vdss, operating temperature range, TO-247-3 package) are compatible. The higher current rating and superior Rds On provide design margin and improved thermal performance.

Q: What is the impact of using APT6025BLLG with lower gate charge (65 nC vs. 200 nC)?

A: Lower gate charge reduces the energy required to switch the device on and off, resulting in lower switching losses and reduced driver power requirements. This is beneficial in high-frequency switching applications. The APT6025BLLG is suitable for designs where switching efficiency is a priority.

Q: Are there any thermal considerations when substituting the IXFR26N60Q?

A: All substitute parts maintain the same -55°C to 150°C operating temperature range. The IRFP26N60LPBF and IXFR64N60P offer higher power dissipation ratings (470W and 320W respectively) compared to the original 310W, providing additional thermal margin. Thermal performance depends on PCB layout, heatsinking, and application duty cycle. Verify that the selected substitute's thermal characteristics meet system requirements.

Q: Is STW19NM60N automotive-qualified?

A: Yes. STW19NM60N includes AEC-Q101 automotive qualification. This device is suitable for automotive applications requiring qualified components. Other substitutes do not list automotive qualification.

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