IXFR26N100P Equivalent & Substitute Parts

Part Overview

The IXFR26N100P is an N-Channel 1000V 15A MOSFET manufactured by IXYS in the HiPerFET™ series. This device is packaged in ISOPLUS247™ (TO-247-3) through-hole configuration and is rated for 290W maximum power dissipation. The part is Active in product status and fully compliant with RoHS3 and REACH regulations. Substitute parts are identified when equivalent electrical performance and mechanical compatibility are required due to inventory constraints, design flexibility, or application-specific requirements.

Substiute Parts

IXFR26N100P

IXYSIn Stock: 857IXFR26N100P Datasheet

Current PartRFQ

APT14F100B

Microchip TechnologyIn Stock: 767APT14F100B Datasheet

SimilarRFQ

STW22N95K5

STMicroelectronicsIn Stock: 2999STW22N95K5 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IXFR26N100P is determined by the following critical parameters:

Primary Substitution Criteria:

• Drain to Source Voltage (Vdss): Minimum 1000V
• Continuous Drain Current (Id): Minimum 15A at 25°C
• Package Type: TO-247-3 through-hole configuration
• Operating Temperature Range: -55°C to 150°C (TJ)
• Gate Drive Voltage: 10V maximum Rds On specification
• Regulatory Compliance: RoHS3 and REACH status

Secondary Compatibility Factors:

• Rds On performance within acceptable operating margins
• Gate Charge (Qg) characteristics for drive circuit compatibility
• Input Capacitance (Ciss) for switching speed considerations
• Power Dissipation capability relative to thermal design requirements

The identified substitute parts meet the primary substitution criteria while maintaining functional equivalence within the specified electrical and mechanical constraints.

Parameter Comparison

Engineering Selection Recommendations

IXFR26N100P (Primary Part)

The IXFR26N100P remains the primary selection when design specifications explicitly require 1000V Vdss with 15A continuous drain current and the ISOPLUS247™ package footprint. This part is Active in product status with full RoHS3 and REACH compliance. Current inventory of 776 pieces supports immediate procurement.

APT14F100B (Microchip Technology Substitute)

The APT14F100B is suitable for applications where 1000V Vdss and 14A continuous drain current satisfy design requirements. This part delivers higher power dissipation capability (500W vs. 290W) and lower gate charge (120nC vs. 197nC), enabling faster switching characteristics. The TO-247-3 package provides direct mechanical compatibility. Active product status and full regulatory compliance (RoHS3, REACH) are confirmed. Inventory of 700 pieces is available.

STW22N95K5 (STMicroelectronics Substitute)

The STW22N95K5 operates at 950V Vdss with 17.5A continuous drain current, suitable for applications where the voltage specification can accommodate a 50V reduction from the primary part. This device features superior Rds On performance (330mOhm vs. 430mOhm) and significantly lower gate charge (48nC vs. 197nC), resulting in improved efficiency and faster switching response. The TO-247-3 package ensures mechanical compatibility. This part carries AEC-Q101 automotive qualification and is Active in product status with full regulatory compliance. Inventory of 2980 pieces provides extended availability.

All three parts share identical operating temperature ranges (-55°C to 150°C), gate voltage ratings (±30V), and regulatory compliance status, ensuring functional interchangeability within their respective electrical specifications.

Frequently Asked Questions (FAQ)

Q: Can the APT14F100B replace the IXFR26N100P in all applications?

A: The APT14F100B is suitable for applications where 14A continuous drain current meets design requirements. Both parts maintain 1000V Vdss and TO-247-3 package compatibility. The APT14F100B exhibits lower gate charge (120nC vs. 197nC) and higher power dissipation capability (500W vs. 290W). Verify that the 1A reduction in continuous drain current does not exceed application current margins.

Q: What is the voltage difference between the IXFR26N100P and STW22N95K5?

A: The IXFR26N100P is rated for 1000V Vdss, while the STW22N95K5 is rated for 950V Vdss. This 50V difference may be acceptable in applications with adequate design margin. The STW22N95K5 provides higher continuous drain current (17.5A vs. 15A) and superior Rds On performance (330mOhm vs. 430mOhm).

Q: Are all three parts mechanically compatible?

A: Yes. All three parts use the TO-247-3 through-hole package configuration, ensuring identical PCB footprint and mounting requirements. No mechanical redesign is required for substitution.

Q: What are the gate charge implications for drive circuit design?

A: The IXFR26N100P requires 197nC gate charge at 10V. The APT14F100B requires 120nC, and the STW22N95K5 requires only 48nC. Lower gate charge reduces drive circuit power dissipation and enables faster switching transitions. Verify that existing gate drive circuits can accommodate these variations without exceeding maximum gate voltage (±30V) or current ratings.

Q: Do all substitute parts meet the same regulatory requirements?

A: Yes. All three parts are RoHS3 compliant and REACH unaffected. The STW22N95K5 additionally carries AEC-Q101 automotive qualification. All parts are classified as Active in product status.

Q: How does input capacitance affect circuit performance?

A: The IXFR26N100P exhibits 11900pF input capacitance at 25V, compared to 3965pF for the APT14F100B and 1550pF for the STW22N95K5. Lower input capacitance reduces gate drive circuit loading and improves switching speed. Applications with high-frequency switching may benefit from the lower capacitance characteristics of the substitute parts.

Q: What inventory considerations apply to these parts?

A: The IXFR26N100P has 776 pieces in stock, the APT14F100B has 700 pieces, and the STW22N95K5 has 2980 pieces available. The STW22N95K5 offers the highest inventory availability for extended production runs.