IXFR24N100 Equivalent & Substitute Parts

Part Overview

The IXFR24N100 is an N-Channel 1000 V, 22A (Tc) MOSFET in ISOPLUS247™ packaging manufactured by IXYS. This device is rated for 416W (Tc) power dissipation and operates across the temperature range of -55°C to 150°C (TJ). The part is classified as Not For New Designs, indicating it has been superseded in the manufacturer's product roadmap. Equivalent and substitute parts are necessary for applications requiring continued supply, design flexibility, or performance optimization within the specified electrical and mechanical constraints.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	1000	V
Continuous Drain Current (Id) @ 25°C	22	A (Tc)
Rds On (Max) @ Id, Vgs	390	mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs	267	nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	8700	pF @ 25V
Power Dissipation (Max)	416	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-247-3 / ISOPLUS247™	Through Hole
Vgs (Max)	±20	V

Substitute Part Grouping Explanation

Substitution of the IXFR24N100 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): Must equal or exceed 1000 V
Continuous Drain Current (Id): Must equal or exceed 22 A (Tc)
Package Type: Must be TO-247-3 or ISOPLUS247™ (Through Hole)
Operating Temperature Range: Must encompass -55°C to 150°C (TJ)
On-State Resistance (Rds On): Lower values indicate improved performance
Gate Charge (Qg): Lower values reduce switching losses
Input Capacitance (Ciss): Lower values reduce gate drive requirements

Substitute Parts Identified:

IXFR32N100P (IXYS HiPerFET™ / Polar Series): Meets voltage and package requirements. Continuous drain current of 18A is below the 22A specification; however, lower Rds On (340 mOhm vs. 390 mOhm) and reduced gate charge (225 nC vs. 267 nC) provide switching efficiency benefits. Active product status ensures continued availability.

STW20N95K5 (STMicroelectronics SuperMESH5™ Series): Drain to Source Voltage of 950 V is below the 1000 V specification. Continuous drain current of 17.5A is below the 22A specification. Significantly lower gate charge (40 nC vs. 267 nC) and input capacitance (1500 pF vs. 8700 pF) reduce gate drive complexity. Active product status and higher inventory availability support long-term supply.

Parameter Comparison

Parameter	IXFR24N100	IXFR32N100P	STW20N95K5	Unit
Manufacturer	IXYS	IXYS	STMicroelectronics	—
Drain to Source Voltage (Vdss)	1000	1000	950	V
Continuous Drain Current (Id) @ 25°C	22	18	17.5	A (Tc)
Rds On (Max) @ Id, Vgs	390 @ 12A, 10V	340 @ 16A, 10V	330 @ 9A, 10V	mOhm
Gate Charge (Qg) (Max) @ Vgs	267 @ 10V	225 @ 10V	40 @ 10V	nC
Input Capacitance (Ciss) (Max) @ Vds	8700 @ 25V	14200 @ 25V	1500 @ 100V	pF
Power Dissipation (Max)	416	320	250	W (Tc)
Operating Temperature Range	-55 to 150	-55 to 150	-55 to 150	°C (TJ)
Package Type	TO-247-3	TO-247-3	TO-247-3	—
Vgs (Max)	±20	±30	±30	V
Product Status	Not For New Designs	Active	Active	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	—

Engineering Selection Recommendations

IXFR32N100P Selection Criteria:

The IXFR32N100P is suitable for applications where the IXFR24N100 is no longer available or where design optimization is required. This part maintains the 1000 V Vdss specification and TO-247-3 package compatibility. The reduced continuous drain current (18A vs. 22A) requires circuit-level evaluation to confirm adequate current margin. The lower Rds On (340 mOhm vs. 390 mOhm) and gate charge (225 nC vs. 267 nC) provide improved switching efficiency and reduced gate drive power. Active product status and ROHS3 compliance ensure regulatory alignment and long-term supply continuity.

STW20N95K5 Selection Criteria:

The STW20N95K5 is applicable in applications where voltage derating is acceptable and gate drive simplification is prioritized. The 950 V Vdss specification represents a 50 V reduction from the IXFR24N100 and requires system-level voltage margin analysis. The continuous drain current of 17.5A is below the 22A specification and necessitates thermal and current distribution review. The significantly reduced gate charge (40 nC vs. 267 nC) and input capacitance (1500 pF vs. 8700 pF) substantially reduce gate driver complexity and power consumption. Active product status, higher inventory availability (9648 Pcs), and ROHS3 compliance support production continuity and cost optimization.

Frequently Asked Questions (FAQ)

Q: Can the IXFR32N100P directly replace the IXFR24N100 in all applications?

A: The IXFR32N100P maintains electrical compatibility in voltage rating (1000 V) and package type (TO-247-3). However, the reduced continuous drain current (18A vs. 22A) requires verification that circuit operating current does not exceed 18A (Tc). Applications operating at or near 22A must be re-evaluated for thermal and current margin.

Q: What are the advantages of using the STW20N95K5 over the IXFR24N100?

A: The STW20N95K5 offers significantly reduced gate charge (40 nC vs. 267 nC) and input capacitance (1500 pF vs. 8700 pF), resulting in lower gate driver power consumption and simplified drive circuitry. The lower on-state resistance (330 mOhm vs. 390 mOhm) reduces conduction losses. These benefits are offset by lower voltage rating (950 V vs. 1000 V) and reduced current rating (17.5A vs. 22A), which require system-level evaluation.

Q: Are all substitute parts available in the same package?

A: Yes. The IXFR24N100, IXFR32N100P, and STW20N95K5 are all packaged in TO-247-3 (Through Hole) format, ensuring mechanical and thermal interface compatibility. Pin configuration remains identical across all three parts.

Q: What is the impact of the lower Vdss rating on the STW20N95K5?

A: The STW20N95K5 has a Vdss rating of 950 V compared to 1000 V for the IXFR24N100. This 50 V difference reduces the maximum voltage the device can withstand. Applications operating at voltages exceeding 950 V or with transient overvoltage conditions must retain the IXFR24N100 or IXFR32N100P.

Q: How do gate charge differences affect circuit design?

A: Gate charge (Qg) directly impacts gate driver power consumption and switching speed. The STW20N95K5 (40 nC) requires significantly less gate charge than the IXFR24N100 (267 nC), allowing use of lower-power gate drivers and reducing switching losses. The IXFR32N100P (225 nC) provides intermediate performance.

Q: Are all parts RoHS and REACH compliant?

A: Yes. The IXFR24N100, IXFR32N100P, and STW20N95K5 are all ROHS3 Compliant and REACH Unaffected, meeting current environmental and regulatory requirements.

Q: What is the significance of the IXFR24N100 being marked "Not For New Designs"?

A: This designation indicates the IXFR24N100 has been superseded in the manufacturer's product portfolio. While existing inventory remains available, IXYS recommends using the IXFR32N100P for new designs. Existing applications may continue using available stock, but long-term supply cannot be guaranteed.

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