IXFR21N100Q Equivalent & Substitute Parts

Part Overview

The IXFR21N100Q is an N-Channel MOSFET rated for 1000V drain-to-source voltage with 18A continuous drain current at 25°C and 350W maximum power dissipation. Manufactured by IXYS, this device is part of the HiPerFET™ Q Class series and is packaged in the ISOPLUS247™ (TO-247-3) through-hole configuration. The part maintains Active product status with full RoHS3 compliance and unlimited moisture sensitivity rating.

Substitute parts are identified when equivalent electrical performance parameters align within acceptable tolerances for the application, or when higher-rated alternatives provide enhanced performance margins while maintaining compatible package and mounting specifications.

Substiute Parts

IXFR21N100Q

IXYSIn Stock: 985IXFR21N100Q Datasheet

Current PartRFQ

IXFR32N100Q3

IXYSIn Stock: 802IXFR32N100Q3 Datasheet

SimilarRFQ

FQAF13N80

onsemiIn Stock: 1296FQAF13N80 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IXFR21N100Q is determined by the following critical parameters:

Primary Substitution Criteria:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 1000V
• Continuous Drain Current (Id): Must equal or exceed 18A at 25°C
• Package Type: Must be ISOPLUS247™ (TO-247-3) through-hole configuration
• Operating Temperature Range: Must support -55°C to 150°C (TJ)
• Technology: N-Channel MOSFET (Metal Oxide)

Secondary Compatibility Factors:

• RoHS3 compliance status
• Gate charge characteristics
• On-resistance (Rds On) performance
• Input capacitance specifications

The IXFR32N100Q3 qualifies as a direct substitute with enhanced performance ratings across current, power dissipation, and on-resistance parameters while maintaining identical voltage class and package configuration. The FQAF13N80 is listed as a substitute option but operates at reduced voltage (800V) and current (8A) ratings, making it suitable only for applications with lower electrical requirements.

Parameter Comparison

Engineering Selection Recommendations

IXFR32N100Q3 (Primary Substitute)

The IXFR32N100Q3 is the preferred substitute for the IXFR21N100Q. Both devices are manufactured by IXYS, maintain Active product status, and share identical voltage class (1000V) and package configuration (ISOPLUS247™ TO-247-3). The IXFR32N100Q3 provides enhanced performance with 23A continuous drain current versus 18A, 570W power dissipation versus 350W, and improved on-resistance of 350mOhm versus 500mOhm. Both parts maintain RoHS3 compliance and unlimited moisture sensitivity rating. The IXFR32N100Q3 operates within the same temperature range (-55°C to 150°C) and is suitable for direct replacement in applications requiring equal or higher current and power handling capacity.

FQAF13N80 (Limited Substitution)

The FQAF13N80, manufactured by onsemi, carries Obsolete product status and operates at reduced electrical ratings (800V Vdss, 8A Id, 120W power dissipation). This device is not suitable as a substitute for the IXFR21N100Q in applications requiring 1000V voltage class or 18A current capacity. The FQAF13N80 features a different package configuration (TO-3P-3 Full Pack) and higher on-resistance (750mOhm). This part is listed only for reference in legacy system documentation and should not be selected for new designs or direct replacement scenarios.

Frequently Asked Questions (FAQ)

Q: Can the IXFR32N100Q3 directly replace the IXFR21N100Q in existing designs?

A: Yes. The IXFR32N100Q3 is a direct substitute with identical voltage rating (1000V), compatible package (ISOPLUS247™ TO-247-3), and enhanced current and power ratings. Both devices are Active products with RoHS3 compliance. The IXFR32N100Q3 provides superior performance margins and is suitable for direct board-level replacement.

Q: What are the key differences between IXFR21N100Q and IXFR32N100Q3?

A: The IXFR32N100Q3 provides higher continuous drain current (23A versus 18A), greater power dissipation capability (570W versus 350W), and lower on-resistance (350mOhm versus 500mOhm). Both maintain 1000V voltage rating and identical package configuration. The IXFR32N100Q3 belongs to the Q3 Class series versus Q Class for the IXFR21N100Q.

Q: Is the FQAF13N80 suitable as a replacement for the IXFR21N100Q?

A: No. The FQAF13N80 operates at 800V maximum voltage and 8A continuous current, both below the IXFR21N100Q specifications. Additionally, the FQAF13N80 carries Obsolete product status and uses a different package configuration (TO-3P-3). This device is not suitable for applications requiring 1000V or 18A ratings.

Q: Are there package compatibility concerns when substituting the IXFR32N100Q3?

A: No. Both the IXFR21N100Q and IXFR32N100Q3 use the ISOPLUS247™ package (TO-247-3) with identical through-hole mounting configuration. Pin assignments and thermal characteristics are compatible for direct board-level substitution.

Q: What compliance certifications apply to these substitute parts?

A: Both the IXFR21N100Q and IXFR32N100Q3 maintain RoHS3 compliance and REACH Unaffected status. Both carry unlimited moisture sensitivity rating (MSL 1). The FQAF13N80 also maintains RoHS3 compliance but carries Not Applicable moisture sensitivity classification due to its Obsolete status.

Q: How do gate charge characteristics affect substitution decisions?

A: Gate charge (Qg) affects switching speed and driver circuit requirements. The IXFR21N100Q specifies 170nC at 10V, while the IXFR32N100Q3 specifies 195nC at 10V. The 25nC difference is within typical driver circuit tolerance margins and does not preclude substitution. The FQAF13N80 specifies 88nC, reflecting its lower current rating.

Q: What is the significance of input capacitance (Ciss) in substitution?

A: Input capacitance affects gate drive circuit design and switching characteristics. The IXFR21N100Q specifies 5900pF at 25V, while the IXFR32N100Q3 specifies 9940pF. The higher capacitance in the IXFR32N100Q3 reflects its higher current rating. Existing gate drive circuits designed for the IXFR21N100Q remain functional with the IXFR32N100Q3 but may experience slightly increased switching times.