IXFR20N100P N-Channel 1000V 11A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFR20N100P is an N-Channel 1000V 11A MOSFET manufactured by IXYS in the HiPerFET™ series, housed in the ISOPLUS247™ package (TO-247-3). This device is classified as obsolete product status. Due to its obsolete classification, equivalent and substitute parts from active product lines are necessary to maintain design continuity and ensure long-term component availability for new designs and production requirements.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	1000	V
Continuous Drain Current (Id) @ 25°C	11	A (Tc)
On-State Resistance (Rds On Max)	640	mOhm @ 10A, 10V
Gate Threshold Voltage (Vgs(th) Max)	6.5	V @ 1mA
Gate Charge (Qg Max)	126	nC @ 10V
Input Capacitance (Ciss Max)	7300	pF @ 25V
Power Dissipation (Max)	230	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-247-3	Through Hole
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the IXFR20N100P is determined by the following critical electrical and mechanical parameters:

Mandatory Matching Parameters:

Drain to Source Voltage (Vdss): 1000V
Package Type: TO-247-3 (Through Hole)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)

Flexible Parameters (allowing substitution with equal or superior ratings):

Continuous Drain Current (Id): Equal to or greater than 11A
On-State Resistance (Rds On): Equal to or lower values acceptable
Gate Charge (Qg): Higher values acceptable
Input Capacitance (Ciss): Higher values acceptable
Power Dissipation: Equal to or greater than 230W

Substitute parts must maintain the 1000V voltage rating and TO-247-3 package configuration. Current rating and on-state resistance may vary within acceptable design margins. All substitute parts must comply with RoHS3 and REACH requirements.

Parameter Comparison

Parameter	IXFR20N100P	IXFR26N100P	APT1001RBVRG	APT9F100B
Manufacturer	IXYS	IXYS	Microchip Technology	Microchip Technology
Vdss (V)	1000	1000	1000	1000
Id @ 25°C (A)	11	15	11	9
Rds On Max (mOhm)	640 @ 10A, 10V	430 @ 13A, 10V	1000 @ 500mA, 10V	1600 @ 5A, 10V
Vgs(th) Max (V)	6.5 @ 1mA	6.5 @ 1mA	4 @ 1mA	5 @ 1mA
Qg Max (nC)	126 @ 10V	197 @ 10V	225 @ 10V	80 @ 10V
Ciss Max (pF)	7300 @ 25V	11900 @ 25V	3660 @ 25V	2606 @ 25V
Power Dissipation Max (W)	230	290	—	337
Operating Temperature (°C)	-55 to 150	-55 to 150	—	-55 to 150
Package	TO-247-3 (ISOPLUS247™)	TO-247-3 (ISOPLUS247™)	TO-247-3	TO-247-3
Product Status	Obsolete	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IXFR26N100P (MFR Recommended Substitute)

The IXFR26N100P is the manufacturer-recommended substitute for the IXFR20N100P. Both devices are from the IXYS HiPerFET™ series and share identical voltage ratings (1000V) and package configuration (TO-247-3 ISOPLUS247™). The IXFR26N100P provides superior performance with 15A continuous drain current versus 11A, reduced on-state resistance (430mOhm versus 640mOhm), and increased power dissipation capability (290W versus 230W). The IXFR26N100P maintains active product status and full RoHS3 compliance, ensuring long-term availability and regulatory compliance.

APT1001RBVRG (Equivalent Current Rating)

The APT1001RBVRG from Microchip Technology is a direct current equivalent with 11A continuous drain current matching the IXFR20N100P. This device maintains the 1000V voltage rating and TO-247-3 package. The APT1001RBVRG is from the POWER MOS V® series and holds active product status with RoHS3 compliance. This substitute is suitable for applications where current rating equivalence is prioritized and the design can accommodate the different on-state resistance characteristics.

APT9F100B (Lower Current Alternative)

The APT9F100B from Microchip Technology provides a 9A continuous drain current rating, which is lower than the IXFR20N100P's 11A rating. This device maintains the 1000V voltage rating and TO-247-3 package configuration. The APT9F100B is from the POWER MOS 8™ series with active product status and RoHS3 compliance. This substitute is applicable only in applications where the 9A current rating is sufficient and design margins permit the lower current specification.

Frequently Asked Questions (FAQ)

Q: Can the IXFR26N100P directly replace the IXFR20N100P in all applications?

A: The IXFR26N100P is electrically and mechanically compatible with the IXFR20N100P. Both devices share identical 1000V voltage ratings, TO-247-3 package configuration, and operating temperature range. The IXFR26N100P provides equal or superior electrical performance across all critical parameters. Direct substitution is valid from an electrical standpoint. Physical board layout and thermal management design should be verified to ensure the increased power dissipation capability (290W versus 230W) does not create thermal management conflicts.

Q: What are the key differences between IXYS and Microchip substitute options?

A: The IXYS IXFR26N100P maintains the same product family lineage as the original IXFR20N100P (HiPerFET™ series) with identical package designation (ISOPLUS247™). Microchip alternatives (APT1001RBVRG and APT9F100B) use standard TO-247-3 packaging and different product series (POWER MOS V® and POWER MOS 8™). All options meet identical voltage, package, and compliance requirements. Selection between manufacturers depends on design-specific requirements for on-state resistance, gate charge, and input capacitance characteristics.

Q: Is the APT9F100B suitable as a substitute if my application requires 11A?

A: The APT9F100B provides only 9A continuous drain current, which is below the IXFR20N100P's 11A specification. This substitute is not appropriate for applications requiring the full 11A current rating. Use the APT9F100B only in applications where the design can operate safely at 9A or lower current levels.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. The IXFR26N100P, APT1001RBVRG, and APT9F100B are all RoHS3 compliant. All substitute parts meet REACH requirements and carry EAR99 ECCN classification, matching the regulatory status of the original IXFR20N100P.

Q: What is the significance of the different on-state resistance values?

A: On-state resistance (Rds On) directly affects power dissipation and thermal performance. The IXFR20N100P specifies 640mOhm maximum, the IXFR26N100P specifies 430mOhm maximum, the APT1001RBVRG specifies 1000mOhm maximum, and the APT9F100B specifies 1600mOhm maximum. Lower Rds On values result in reduced power dissipation and improved efficiency. Higher Rds On values increase power dissipation and require enhanced thermal management. Design thermal analysis must account for these differences when selecting substitutes.

Q: Can I use the IXFR26N100P in a design originally specified for the IXFR20N100P without circuit modifications?

A: The IXFR26N100P is a direct substitute requiring no circuit modifications. The device maintains identical voltage ratings, package configuration, gate threshold voltage, and operating temperature range. The improved electrical performance (higher current rating, lower on-state resistance, higher power dissipation capability) makes the IXFR26N100P a superior replacement. Verify that thermal management design accommodates the increased power dissipation capability if the application operates at maximum current levels.

Q: What is the moisture sensitivity level for all substitute parts?

A: All substitute parts, including the original IXFR20N100P, carry MSL 1 (Unlimited) classification, indicating unlimited shelf life without moisture control requirements.

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