IXFR180N15P N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IXFR180N15P is an N-Channel MOSFET manufactured by IXYS, rated for 150V drain-to-source voltage with 100A continuous drain current at 25°C. This device is packaged in the ISOPLUS247™ form factor and is designed for high-power switching applications requiring through-hole mounting. The part is currently in active production status with RoHS3 compliance and unlimited moisture sensitivity rating.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges while maintaining compatibility with the application's thermal, voltage, and current requirements.

Substiute Parts

IXFR180N15P

IXYSIn Stock: 1028IXFR180N15P Datasheet

Current PartRFQ

IRFP4321PBF

Infineon TechnologiesIn Stock: 2308IRFP4321PBF Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IXFR180N15P is determined by the following critical parameters:

Voltage Rating: The substitute part must maintain a Drain to Source Voltage (Vdss) rating of 150V or greater to ensure safe operation across the application's voltage envelope.

Current Capability: The substitute part must support continuous drain current (Id) at 25°C sufficient for the application. The IXFR180N15P specifies 100A; substitute parts with lower current ratings require application-level current derating analysis.

On-State Resistance (Rds On): Lower Rds On values reduce conduction losses and heat dissipation. Substitute parts with higher Rds On values increase power dissipation and may require thermal management adjustments.

Gate Charge (Qg): Gate charge affects switching speed and driver circuit requirements. Substitute parts with significantly different gate charge values may require driver circuit optimization.

Power Dissipation Rating: The substitute part must support the thermal load of the application. Higher power dissipation ratings provide additional thermal margin.

Package Compatibility: Both the main part (ISOPLUS247™) and substitute parts must use compatible through-hole mounting packages (TO-247-3 family) to ensure mechanical and thermal interface compatibility.

Compliance Status: All substitute parts must maintain active product status and equivalent RoHS3 compliance certification.

Parameter Comparison

Engineering Selection Recommendations

IRFP4321PBF as Substitute for IXFR180N15P:

The IRFP4321PBF is an active-status N-Channel MOSFET manufactured by Infineon Technologies with identical voltage rating (150V Vdss) and compatible TO-247-3 through-hole packaging. Both devices maintain RoHS3 compliance and unlimited moisture sensitivity classification.

Current Derating Consideration: The IRFP4321PBF specifies 78A continuous drain current compared to the IXFR180N15P's 100A rating. Applications requiring the full 100A continuous current cannot use this substitute without current derating or parallel device configuration.

On-State Resistance: The IRFP4321PBF exhibits 15.5 mOhm Rds On (measured at 33A, 10V) versus the IXFR180N15P's 13 mOhm (measured at 90A, 10V). The higher Rds On value increases conduction losses proportionally to the square of drain current.

Gate Charge and Switching Characteristics: The IRFP4321PBF features significantly lower gate charge (110 nC versus 240 nC) and lower input capacitance (4460 pF versus 7000 pF), resulting in faster switching transitions and reduced driver circuit stress.

Thermal Performance: Both devices support comparable power dissipation ratings (310W versus 300W), providing equivalent thermal headroom for the application.

Substitution Validity: The IRFP4321PBF is a valid substitute for applications operating below 78A continuous drain current or where current derating is acceptable. For applications requiring the full 100A specification, this substitute is not appropriate without circuit modification.

Frequently Asked Questions (FAQ)

Q: Can the IRFP4321PBF replace the IXFR180N15P in all applications?

A: No. The IRFP4321PBF is rated for 78A continuous drain current versus the IXFR180N15P's 100A. Substitution is valid only for applications operating at or below 78A continuous current. Applications requiring 100A operation require either the original part or parallel device configuration.

Q: What is the impact of the higher Rds On value in the IRFP4321PBF?

A: Higher on-state resistance increases conduction losses. Power dissipation increases proportionally to I²R. At equivalent current levels, the IRFP4321PBF will generate more heat than the IXFR180N15P. Thermal management design must account for this difference.

Q: Are the TO-247-3 packages mechanically interchangeable?

A: Yes. Both the ISOPLUS247™ (IXFR180N15P) and TO-247AC (IRFP4321PBF) packages use the TO-247-3 form factor with identical pin spacing and mounting hole patterns. Mechanical and thermal interface compatibility is maintained.

Q: Does the lower gate charge of the IRFP4321PBF affect driver circuit design?

A: Yes. Lower gate charge (110 nC versus 240 nC) reduces the charge that the gate driver must supply per switching cycle. Existing driver circuits designed for the IXFR180N15P will operate the IRFP4321PBF with reduced driver stress and potentially faster switching transitions. No driver circuit modification is required for compatibility.

Q: Are both parts RoHS3 compliant?

A: Yes. Both the IXFR180N15P and IRFP4321PBF carry RoHS3 compliance certification and are suitable for applications with RoHS compliance requirements.

Q: What is the voltage rating equivalence between these parts?

A: Both parts are rated for 150V Drain to Source Voltage (Vdss). Voltage rating equivalence is confirmed, and either part can be used in applications with voltage requirements up to 150V.