IXFR15N100Q3 Equivalent & Substitute Parts

Part Overview

The IXFR15N100Q3 is an N-Channel MOSFET rated for 1000V drain-to-source voltage with 10A continuous drain current at 25°C. Manufactured by IXYS, this device is part of the HiPerFET™ Q3 Class series and is housed in an ISOPLUS247™ package for through-hole mounting applications. The component is Active in product status and fully compliant with RoHS3 and REACH regulations.

Equivalent and substitute parts are identified when applications require alternative sourcing due to inventory constraints, supply chain considerations, or when design specifications permit operation within the electrical and mechanical parameters of alternative devices.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	1000	V
Current - Continuous Drain (Id) @ 25°C	10	A (Tc)
Rds On (Max) @ Id, Vgs	1.2	Ohm @ 7.5A, 10V
Power Dissipation (Max)	400	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-247-3	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitute parts for the IXFR15N100Q3 are identified based on the following electrical and mechanical criteria:

Primary Substitution Criteria:

FET Type: N-Channel topology
Package / Case: TO-247-3 through-hole mounting compatibility
Drain to Source Voltage (Vdss): Equal to or greater than 1000V
Current - Continuous Drain (Id) @ 25°C: Equal to or greater than 10A
Rds On (Max): Equal to or less than 1.2 Ohm at specified conditions
Power Dissipation (Max): Equal to or greater than 400W
Operating Temperature Range: Minimum -55°C to maximum 150°C
Regulatory Compliance: RoHS3 Compliant and REACH Unaffected

The APT14M120B from Microchip Technology meets these substitution criteria with enhanced electrical performance characteristics while maintaining mechanical and thermal compatibility.

Parameter Comparison

Parameter	IXFR15N100Q3	APT14M120B	Unit
Manufacturer	IXYS	Microchip Technology	—
FET Type	N-Channel	N-Channel	—
Drain to Source Voltage (Vdss)	1000	1200	V
Current - Continuous Drain (Id) @ 25°C	10	14	A (Tc)
Drive Voltage (Max Rds On)	10	10	V
Rds On (Max) @ Id, Vgs	1.2 @ 7.5A, 10V	1.2 @ 7A, 10V	Ohm
Vgs(th) (Max) @ Id	6.5 @ 4mA	5 @ 1mA	V
Gate Charge (Qg) (Max) @ Vgs	64	145	nC @ 10V
Vgs (Max)	±30	±30	V
Input Capacitance (Ciss) (Max) @ Vds	3250	4765	pF @ 25V
Power Dissipation (Max)	400	625	W (Tc)
Operating Temperature Range	-55 to 150	-55 to 150	°C (TJ)
Mounting Type	Through Hole	Through Hole	—
Package / Case	TO-247-3	TO-247-3	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	—
REACH Status	REACH Unaffected	REACH Unaffected	—

Engineering Selection Recommendations

IXFR15N100Q3 (Primary Selection)

The IXFR15N100Q3 remains the primary component choice when original specifications are required. This device is Active in product status with 878 pieces available in inventory. Full RoHS3 compliance and REACH Unaffected status confirm regulatory alignment for current and future applications.

APT14M120B (Substitute Selection)

The APT14M120B from Microchip Technology qualifies as a direct substitute when the IXFR15N100Q3 is unavailable. This device exceeds the minimum electrical requirements with 1200V Vdss rating and 14A continuous drain current, providing enhanced performance margin. The APT14M120B maintains identical TO-247-3 package compatibility and operating temperature range (-55°C to 150°C). Both devices share RoHS3 Compliant and REACH Unaffected certifications. Inventory availability of 1940 pieces supports supply chain continuity. The substitute device exhibits higher gate charge (145 nC versus 64 nC) and input capacitance (4765 pF versus 3250 pF), which may affect switching characteristics in high-frequency applications but does not prevent functional substitution within the specified electrical parameters.

Frequently Asked Questions (FAQ)

Q: Can the APT14M120B directly replace the IXFR15N100Q3 in existing designs?

A: Yes. The APT14M120B meets all minimum electrical and mechanical substitution criteria. Both devices feature N-Channel topology, TO-247-3 through-hole packaging, identical operating temperature range, and equivalent Rds On specifications at 10V drive voltage. The substitute device provides higher voltage and current ratings, which do not prevent direct substitution.

Q: What are the key differences between these two devices?

A: The APT14M120B provides higher Vdss (1200V versus 1000V), higher continuous drain current (14A versus 10A), and higher power dissipation capability (625W versus 400W). The substitute device exhibits higher gate charge and input capacitance, which may increase switching losses in applications operating at high switching frequencies. Both devices maintain identical maximum gate-source voltage (±30V) and operating temperature range.

Q: Are both devices RoHS3 compliant?

A: Yes. Both the IXFR15N100Q3 and APT14M120B are RoHS3 Compliant with Moisture Sensitivity Level 1 (Unlimited). Both devices are REACH Unaffected, confirming regulatory compliance for current and future procurement.

Q: Does the higher gate charge of the APT14M120B affect circuit design?

A: Gate charge (Qg) of 145 nC for the APT14M120B versus 64 nC for the IXFR15N100Q3 indicates increased switching energy requirements. Applications with fixed gate drive circuits may experience longer switching times with the substitute device. Circuit validation is necessary to confirm gate drive capability and switching performance alignment with application requirements.

Q: Are both devices available in the same packaging format?

A: Yes. Both devices use TO-247-3 through-hole packaging, ensuring mechanical and thermal interface compatibility. No PCB layout modifications are required for physical substitution.

Q: What is the Moisture Sensitivity Level for both devices?

A: Both the IXFR15N100Q3 and APT14M120B carry Moisture Sensitivity Level 1 (Unlimited), indicating no moisture sensitivity restrictions for storage, handling, or reflow processes.

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