IXFR140N30P N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IXFR140N30P is an N-Channel MOSFET manufactured by IXYS, rated for 300V drain-to-source voltage and 70A continuous drain current. This device is packaged in the ISOPLUS247™ form factor and is designed for high-power switching applications requiring through-hole mounting. The part is currently in active production status with 1,235 units in stock.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter tolerances and mechanical compatibility constraints. The IRFP4868PBF represents an alternative solution for applications where the IXFR140N30P is unavailable or where design flexibility permits component substitution.

Key Parameters

Parameter	IXFR140N30P	Unit
Drain-to-Source Voltage (Vdss)	300	V
Continuous Drain Current (Id) @ 25°C	70	A (Tc)
On-State Resistance (Rds On Max) @ 70A, 10V	26	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 8mA	5	V
Gate Charge (Qg Max) @ 10V	185	nC
Input Capacitance (Ciss Max) @ 25V	14800	pF
Power Dissipation (Max)	300	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	ISOPLUS247™ / TO-247-3	Through Hole
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitution eligibility for N-Channel MOSFETs in the 300V class is determined by the following critical parameters:

Voltage Rating: Both the main part and substitute must maintain a Vdss rating of 300V or greater to ensure safe operation in the target application circuit.

Current Rating: The continuous drain current (Id) must equal or exceed 70A at 25°C to support the specified load requirements.

On-State Resistance (Rds On): The maximum on-state resistance determines conduction losses. The IXFR140N30P specifies 26 mOhm at 70A and 10V gate drive. Substitute parts with higher Rds On values will increase power dissipation and heat generation.

Gate Charge (Qg): Gate charge affects switching speed and driver circuit requirements. The IXFR140N30P specifies 185 nC maximum at 10V.

Package Compatibility: Both parts utilize TO-247-3 through-hole packaging, ensuring mechanical and thermal interface compatibility with existing PCB layouts and heatsink mounting arrangements.

Regulatory Compliance: Both parts maintain ROHS3 compliance and REACH unaffected status, meeting environmental and hazardous substance restrictions.

The IRFP4868PBF meets the voltage and current requirements but exhibits higher on-state resistance (32 mOhm at 42A, 10V) and increased gate charge (270 nC at 10V), resulting in higher switching losses and thermal output.

Parameter Comparison

Parameter	IXFR140N30P	IRFP4868PBF	Unit	Notes
Manufacturer	IXYS	Infineon Technologies	-	Different manufacturers
Drain-to-Source Voltage (Vdss)	300	300	V	Equivalent
Continuous Drain Current (Id) @ 25°C	70	70	A (Tc)	Equivalent
Drive Voltage (Max Rds On)	10	10	V	Equivalent
Rds On (Max) @ Id, Vgs	26 @ 70A, 10V	32 @ 42A, 10V	mOhm	IXFR140N30P lower
Vgs(th) (Max) @ Id	5 @ 8mA	5 @ 250µA	V	Equivalent threshold
Gate Charge (Qg Max) @ Vgs	185 @ 10V	270 @ 10V	nC	IXFR140N30P lower
Input Capacitance (Ciss Max) @ Vds	14800 @ 25V	10774 @ 50V	pF	Measured at different Vds
Vgs (Max)	±20	±20	V	Equivalent
Power Dissipation (Max)	300	517	W (Tc)	IRFP4868PBF higher
Operating Temperature Range	-55 to 150	-55 to 175	°C (TJ)	IRFP4868PBF wider range
Package / Case	TO-247-3	TO-247-3	-	Equivalent
Mounting Type	Through Hole	Through Hole	-	Equivalent
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	-	Equivalent
Product Status	Active	Not For New Designs	-	IXFR140N30P preferred

Engineering Selection Recommendations

Primary Selection: The IXFR140N30P is the recommended component for new designs. This part maintains active production status, ensuring long-term availability and supply chain stability. The device exhibits superior on-state resistance characteristics (26 mOhm versus 32 mOhm) and lower gate charge (185 nC versus 270 nC), resulting in reduced conduction losses and improved switching efficiency.

Substitute Selection: The IRFP4868PBF is classified as "Not For New Designs" by the manufacturer. This designation indicates the part is in mature or declining production phase. Substitution with the IRFP4868PBF is permissible only in legacy system maintenance, repair, or retrofit applications where the IXFR140N30P is unavailable and design modification is not feasible.

Compliance Considerations: Both parts maintain equivalent regulatory compliance with ROHS3 and REACH requirements, ensuring environmental and hazardous substance conformance across both options.

Thermal Performance: The IRFP4868PBF supports a wider operating temperature range (-55°C to 175°C versus -55°C to 150°C) and higher maximum power dissipation rating (517W versus 300W). These characteristics may provide thermal margin in applications operating near the upper temperature limits of the IXFR140N30P.

Electrical Performance Trade-offs: The IRFP4868PBF exhibits higher on-state resistance and gate charge, which increase power dissipation during switching and conduction phases. Applications with stringent thermal budgets or high switching frequency requirements should prioritize the IXFR140N30P.

Frequently Asked Questions (FAQ)

Q: Can the IRFP4868PBF directly replace the IXFR140N30P in existing designs?

A: Mechanical compatibility is confirmed; both devices use TO-247-3 through-hole packaging. Electrical compatibility is partial. The IRFP4868PBF meets the 300V voltage rating and 70A current rating requirements. However, the higher on-state resistance (32 mOhm versus 26 mOhm) and increased gate charge (270 nC versus 185 nC) will increase power dissipation. Thermal analysis of the specific application is required to confirm acceptable heat dissipation with the substitute part.

Q: What are the primary differences in electrical performance between these two parts?

A: The IXFR140N30P exhibits lower on-state resistance and gate charge, resulting in lower conduction losses and faster switching response. The IRFP4868PBF provides higher power dissipation rating and extended operating temperature range. For applications prioritizing efficiency and switching speed, the IXFR140N30P is superior. For applications requiring extended temperature operation or higher thermal capacity, the IRFP4868PBF may offer advantages.

Q: Why is the IRFP4868PBF marked "Not For New Designs"?

A: This designation indicates the part is in mature production phase with declining availability. New designs should specify the IXFR140N30P to ensure long-term component availability and supply chain continuity.

Q: Are the gate drive requirements identical between these parts?

A: Both parts specify a 10V drive voltage for maximum on-state resistance performance. Gate charge differs significantly: IXFR140N30P requires 185 nC while IRFP4868PBF requires 270 nC. Gate drivers with higher current capacity may be required for the IRFP4868PBF to achieve equivalent switching speeds.

Q: Do both parts meet current environmental compliance standards?

A: Yes. Both the IXFR140N30P and IRFP4868PBF maintain ROHS3 compliance and REACH unaffected status, meeting current environmental and hazardous substance regulations.

Q: What is the impact of higher gate charge on circuit design?

A: Higher gate charge increases the energy required per switching cycle and extends switching transition times. This results in increased switching losses and may require gate driver circuits with higher current output capability. The IXFR140N30P's lower gate charge (185 nC) permits more efficient gate drive implementation.

Q: Are there thermal interface differences between the ISOPLUS247™ and TO-247AC packages?

A: Both parts utilize TO-247-3 through-hole packaging with equivalent mechanical and thermal interface characteristics. Heatsink mounting and PCB layout compatibility are identical.

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