IXFR12N100Q Equivalent & Substitute Parts

Part Overview

The IXFR12N100Q is an N-Channel MOSFET rated for 1000V drain-to-source voltage with 10A continuous drain current at 25°C. Manufactured by IXYS, this device is part of the HiPerFET™ Q Class series and is housed in an ISOPLUS247™ package (TO-247-3). The component is Active in product status and fully compliant with RoHS3 and REACH regulations.

Substitute parts are identified when equivalent electrical and mechanical parameters allow direct replacement in circuit applications. Substitution necessity arises from inventory availability, manufacturing discontinuation, or application-specific performance requirements within the defined parameter envelope.

Substiute Parts

IXFR12N100Q

IXYSIn Stock: 2220IXFR12N100Q Datasheet

Current PartRFQ

IXFR15N100Q3

IXYSIn Stock: 950IXFR15N100Q3 Datasheet

SimilarRFQ

STW6N95K5

STMicroelectronicsIn Stock: 65303STW6N95K5 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IXFR12N100Q is determined by the following critical parameters:

Primary Substitution Criteria:

• Drain to Source Voltage (Vdss): Must equal or exceed 1000V
• Current - Continuous Drain (Id) @ 25°C: Must equal or exceed 10A
• Package / Case: Must be TO-247-3 or equivalent ISOPLUS247™
• Mounting Type: Must be Through Hole
• Operating Temperature Range: Must encompass -55°C to 150°C
• RoHS Status: Must maintain ROHS3 Compliance

Identified Substitutes:

The IXFR15N100Q3 (IXYS) qualifies as a direct substitute. It maintains identical Vdss (1000V) and Id (10A) ratings, shares the same TO-247-3 package, and operates across the same temperature range. Enhanced power dissipation (400W vs. 250W) and gate charge characteristics (64 nC vs. 90 nC) provide improved thermal performance.

The STW6N95K5 (STMicroelectronics) operates at reduced voltage (950V Vdss) and current (9A Id) specifications. While these parameters fall below the primary device ratings, the STW6N95K5 remains functionally compatible in applications where the full 1000V/10A envelope is not required. The TO-247-3 package and through-hole mounting are maintained.

Parameter Comparison

Engineering Selection Recommendations

IXFR15N100Q3 (IXYS)

The IXFR15N100Q3 is the primary equivalent substitute for the IXFR12N100Q. Both devices are manufactured by IXYS, share identical voltage and current ratings (1000V/10A), and maintain the same TO-247-3 package configuration. The IXFR15N100Q3 offers enhanced power dissipation capability (400W vs. 250W) and reduced gate charge (64 nC vs. 90 nC), resulting in improved thermal performance and faster switching characteristics. Both devices maintain Active product status and full RoHS3 and REACH compliance. This substitute is suitable for direct replacement in applications requiring the full 1000V/10A specification envelope.

STW6N95K5 (STMicroelectronics)

The STW6N95K5 is a secondary substitute option for applications where reduced voltage and current specifications are acceptable. This device operates at 950V Vdss and 9A Id, representing a 5% reduction in voltage rating and 10% reduction in current rating compared to the primary device. The STW6N95K5 maintains the TO-247-3 package and through-hole mounting configuration. This substitute is suitable only for circuits designed to operate within the 950V/9A parameter envelope. The device maintains Active product status and full RoHS3 and REACH compliance.

Frequently Asked Questions (FAQ)

Q: Can the IXFR15N100Q3 be used as a direct replacement for the IXFR12N100Q?

A: Yes. The IXFR15N100Q3 maintains identical Vdss (1000V) and Id (10A) ratings, shares the same TO-247-3 package, and operates across the same temperature range (-55°C to 150°C). Both devices are manufactured by IXYS and hold Active product status with full RoHS3 compliance.

Q: What are the limitations of using the STW6N95K5 as a substitute?

A: The STW6N95K5 operates at reduced specifications: 950V Vdss (50V lower) and 9A Id (1A lower) compared to the IXFR12N100Q. This substitute is suitable only for applications where the circuit design accommodates these reduced ratings. The device is not suitable for applications requiring the full 1000V/10A envelope.

Q: Are all substitute parts housed in the same package?

A: Yes. The IXFR12N100Q, IXFR15N100Q3, and STW6N95K5 are all housed in the TO-247-3 package with through-hole mounting configuration, ensuring mechanical compatibility in existing PCB layouts.

Q: Do all parts meet the same regulatory compliance standards?

A: Yes. The IXFR12N100Q, IXFR15N100Q3, and STW6N95K5 are all ROHS3 Compliant, REACH Unaffected, and carry Moisture Sensitivity Level 1 (Unlimited). All devices are classified under ECCN EAR99 and HTSUS 8541.29.0095.

Q: What is the primary difference between the IXFR12N100Q and IXFR15N100Q3?

A: The IXFR15N100Q3 provides enhanced power dissipation (400W vs. 250W) and lower gate charge (64 nC vs. 90 nC), resulting in improved thermal performance and faster switching response. Both devices maintain identical voltage and current ratings.

Q: Can the STW6N95K5 be used in high-voltage applications requiring 1000V operation?

A: No. The STW6N95K5 is rated for 950V maximum Vdss. Use in applications requiring 1000V operation exceeds the device specification and is not permitted.