IXFQ24N50P2 Equivalent & Substitute Parts

Part Overview

The IXFQ24N50P2 is an N-Channel MOSFET rated for 500V drain-to-source voltage with 24A continuous drain current at 25°C. This device is manufactured by IXYS and packaged in a TO-3P through-hole configuration. The part is designated as Last Time Buy, indicating that the original manufacturer has discontinued or will discontinue production. Identification of equivalent and substitute parts is necessary to ensure design continuity and maintain supply chain reliability for applications currently utilizing this component.

Substiute Parts

IXFQ24N50P2
IXYSIn Stock: 865IXFQ24N50P2 Datasheet
IXFQ24N50P2
Current Part
IXFQ26N50P3
IXYSIn Stock: 652IXFQ26N50P3 Datasheet
IXFQ26N50P3
MFR Recommended

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 500 V
Continuous Drain Current (Id) @ 25°C 24 A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs 270 mOhm @ 500mA, 10V
Gate Threshold Voltage (Vgs(th) Max) @ Id 4.5 V @ 1mA
Gate Charge (Qg Max) @ Vgs 48 nC @ 10V
Input Capacitance (Ciss Max) @ Vds 2890 pF @ 25V
Power Dissipation (Max) 480 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Mounting Type Through Hole -
Package / Case TO-3P-3, SC-65-3 -
Maximum Gate Voltage (Vgs Max) ±30 V

Substitute Part Grouping Explanation

Substitution of the IXFQ24N50P2 is based on electrical and mechanical compatibility within the N-Channel MOSFET category. The primary substitution criteria are:

Electrical Compatibility Requirements:

  • Drain to Source Voltage (Vdss) must equal or exceed 500V
  • Continuous Drain Current (Id) must equal or exceed 24A at 25°C
  • On-State Resistance (Rds On) must not exceed the original specification to maintain thermal performance
  • Gate Threshold Voltage (Vgs(th)) must be compatible with existing gate drive circuitry
  • Operating temperature range must encompass -55°C to 150°C

Mechanical Compatibility Requirements:

  • Mounting type must be Through Hole
  • Package must be TO-3P or equivalent footprint (TO-3P-3, SC-65-3)
  • Maximum gate voltage rating must be ±30V or greater

The IXFQ26N50P3 meets all substitution criteria as a manufacturer-recommended alternative, offering improved electrical performance while maintaining mechanical compatibility.

Parameter Comparison

Parameter IXFQ24N50P2 IXFQ26N50P3 Unit
Drain to Source Voltage (Vdss) 500 500 V
Continuous Drain Current (Id) @ 25°C 24 26 A (Tc)
On-State Resistance (Rds On Max) 270 @ 500mA, 10V 230 @ 13A, 10V mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id 4.5 @ 1mA 5.0 @ 4mA V
Gate Charge (Qg Max) @ Vgs 48 @ 10V 42 @ 10V nC
Input Capacitance (Ciss Max) @ Vds 2890 @ 25V 2220 @ 25V pF
Power Dissipation (Max) 480 500 W (Tc)
Operating Temperature Range -55 to 150 -55 to 150 °C (TJ)
Mounting Type Through Hole Through Hole -
Package / Case TO-3P-3, SC-65-3 TO-3P-3, SC-65-3 -
Maximum Gate Voltage (Vgs Max) ±30 ±30 V

Engineering Selection Recommendations

The IXFQ26N50P3 is the manufacturer-recommended substitute for the IXFQ24N50P2. This substitution is supported by the following factors:

Product Status Alignment: The IXFQ24N50P2 is designated Last Time Buy, indicating end-of-life status. The IXFQ26N50P3 carries Active product status, ensuring continued availability and supply chain stability.

Compliance and Certification: The IXFQ26N50P3 is ROHS3 Compliant, whereas the IXFQ24N50P2 is not applicable for RoHS classification. Both parts are REACH Unaffected and classified under ECCN EAR99. The improved compliance posture of the substitute part supports long-term design qualification.

Electrical Performance Enhancement: The IXFQ26N50P3 provides superior electrical characteristics within the same voltage and package class. The increased continuous drain current (26A versus 24A), reduced on-state resistance (230mOhm versus 270mOhm), and increased power dissipation rating (500W versus 480W) deliver improved thermal performance and current handling capacity. Gate charge reduction (42nC versus 48nC) and input capacitance reduction (2220pF versus 2890pF) result in faster switching characteristics.

Mechanical and Thermal Compatibility: Both parts utilize identical through-hole mounting and TO-3P packaging, ensuring direct mechanical substitution without PCB redesign. Operating temperature ranges are identical, maintaining thermal design margins.

Frequently Asked Questions (FAQ)

Q: Can the IXFQ26N50P3 be used as a direct replacement for the IXFQ24N50P2 without circuit modification?

A: Yes. The IXFQ26N50P3 is electrically and mechanically compatible with the IXFQ24N50P2. Both devices share identical drain-to-source voltage ratings (500V), compatible gate threshold voltages, identical maximum gate voltage (±30V), and identical TO-3P through-hole packaging. The substitute part meets or exceeds all electrical specifications of the original part.

Q: What are the key differences between these two parts?

A: The IXFQ26N50P3 offers improved performance in four areas: (1) higher continuous drain current rating (26A versus 24A), (2) lower on-state resistance (230mOhm versus 270mOhm), (3) reduced gate charge (42nC versus 48nC), and (4) lower input capacitance (2220pF versus 2890pF). These improvements result in better thermal performance and faster switching response.

Q: Are the packages physically identical?

A: Yes. Both the IXFQ24N50P2 and IXFQ26N50P3 use the TO-3P-3 and SC-65-3 package designations. The through-hole mounting configuration and physical dimensions are identical, allowing direct PCB substitution without layout changes.

Q: Why is the IXFQ24N50P2 designated as Last Time Buy?

A: Last Time Buy designation indicates that the manufacturer has discontinued or will discontinue production of this part. This status necessitates identification of alternative parts to maintain design continuity and ensure future supply availability.

Q: What is the compliance difference between these parts?

A: The IXFQ26N50P3 is ROHS3 Compliant, while the IXFQ24N50P2 is not applicable for RoHS classification. Both parts are REACH Unaffected. The improved compliance status of the substitute part supports regulatory alignment for new designs and long-term product qualification.

Q: Will the lower gate charge of the IXFQ26N50P3 affect gate drive circuit design?

A: The reduced gate charge (42nC versus 48nC) of the IXFQ26N50P3 is compatible with existing gate drive circuits designed for the IXFQ24N50P2. Lower gate charge results in faster switching and reduced gate drive power dissipation, both beneficial characteristics. No gate drive circuit modification is required.

Q: Are there any thermal design considerations when substituting these parts?

A: The IXFQ26N50P3 has a higher power dissipation rating (500W versus 480W) and lower on-state resistance, resulting in improved thermal performance. Existing thermal management solutions designed for the IXFQ24N50P2 remain adequate for the substitute part and may provide additional thermal margin.

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