IXFQ14N80P N-Channel 800V 14A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFQ14N80P is an N-Channel 800V 14A MOSFET manufactured by IXYS in the HiPerFET™ series, housed in a TO-3P package. This device is rated for 400W power dissipation and operates across a temperature range of -55°C to 150°C. The part is currently classified as obsolete, making equivalent and substitute parts necessary for ongoing system support and new design implementations.

Substitute parts must maintain compatibility with the primary electrical specifications: 800V drain-to-source voltage rating, N-Channel configuration, 10V gate drive voltage, and through-hole mounting capability. Package variations are acceptable when mechanical constraints permit.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	800	V
Continuous Drain Current (Id) @ 25°C	14	A
Rds On (Max) @ 500mA, 10V	720	mOhm
Gate Threshold Voltage (Vgs(th)) @ 4mA	5.5	V
Gate Charge (Qg) @ 10V	61	nC
Input Capacitance (Ciss) @ 25V	3900	pF
Power Dissipation (Max)	400	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-3P	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution eligibility is determined by strict adherence to the following electrical and mechanical criteria:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal 800V
FET Type: Must be N-Channel
Technology: Must be MOSFET (Metal Oxide)
Gate Drive Voltage: Must support 10V operation
Mounting Type: Must be Through Hole
Operating Temperature Range: Must encompass -55°C to 150°C minimum

Secondary Compatibility Factors:

Continuous Drain Current (Id): Substitute must meet or exceed 14A at 25°C
Rds On (Max): Lower values indicate improved performance; values up to 900mOhm are acceptable
Gate Charge (Qg): Lower values reduce switching losses
Power Dissipation: Substitute must support minimum 400W or application-specific thermal requirements
Package: TO-3P, TO-3PN, and TO-247 packages are mechanically compatible through-hole options

All four substitute parts meet the primary criteria. Variations in secondary parameters reflect different manufacturing technologies and design optimizations across manufacturers.

Parameter Comparison

Parameter	IXFQ14N80P (Main)	FQA13N80-F109	APT11F80B	STW12NK80Z	STW11NM80
Manufacturer	IXYS	onsemi	Microchip Technology	STMicroelectronics	STMicroelectronics
Vdss (V)	800	800	800	800	800
Id @ 25°C (A)	14	12.6	12	10.5	11
Rds On (Max) @ 10V (mOhm)	720 @ 500mA	750 @ 6.3A	900 @ 6A	750 @ 5.25A	400 @ 5.5A
Vgs(th) (Max) (V)	5.5	5	5	4.5	5
Gate Charge (Qg) @ 10V (nC)	61	88	80	87	43.6
Ciss @ 25V (pF)	3900	3500	2471	2620	1630
Power Dissipation (Max) (W)	400	300	337	190	150
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-65 to 150
Package	TO-3P	TO-3PN	TO-247 [B]	TO-247-3	TO-247-3
Product Status	Obsolete	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

FQA13N80-F109 (onsemi)

The FQA13N80-F109 is the closest electrical equivalent to the IXFQ14N80P. It maintains the same 800V Vdss rating, operates within the required temperature range, and is housed in a TO-3PN package compatible with TO-3P mounting footprints. The part is currently in active production status with extensive inventory availability (28,750 units). RoHS3 compliance and REACH unaffected status ensure regulatory alignment. The 12.6A continuous drain current and 750mOhm Rds On provide acceptable performance margins for most applications previously served by the IXFQ14N80P.

APT11F80B (Microchip Technology)

The APT11F80B offers active production status and full regulatory compliance. The TO-247 [B] package requires mechanical redesign compared to the TO-3P footprint but provides superior thermal characteristics through enhanced lead geometry. The 12A continuous drain current and 900mOhm Rds On represent acceptable trade-offs for applications with moderate current demands. This part is suitable for new designs where package transition is feasible.

STW12NK80Z (STMicroelectronics)

The STW12NK80Z is manufactured using SuperMESH™ technology and maintains active production status. The TO-247-3 package requires mechanical adaptation. The 10.5A continuous drain current and 750mOhm Rds On are suitable for applications with reduced current requirements. The 190W power dissipation rating necessitates thermal management evaluation for high-power applications.

STW11NM80 (STMicroelectronics)

The STW11NM80 employs MDmesh™ technology and is actively produced. The TO-247-3 package requires mechanical redesign. This part exhibits the lowest gate charge (43.6 nC) and input capacitance (1630 pF), resulting in reduced switching losses. The 11A continuous drain current and 400mOhm Rds On provide superior on-state performance. The 150W power dissipation rating limits application scope to lower-power circuits. The extended operating temperature range (-65°C to 150°C) provides additional thermal margin.

All substitute parts maintain RoHS3 compliance and REACH unaffected status, ensuring environmental and regulatory compatibility with the original IXFQ14N80P specification.

Frequently Asked Questions (FAQ)

Q: Can the FQA13N80-F109 be used as a direct replacement for the IXFQ14N80P without PCB modifications?

A: The FQA13N80-F109 uses a TO-3PN package, which shares the same three-pin through-hole configuration as the TO-3P package. Pin assignments are compatible, allowing direct socket substitution without PCB layout changes. Verify mechanical clearance around the package body, as dimensional tolerances may vary slightly between manufacturers.

Q: What are the implications of using a substitute part with lower continuous drain current rating?

A: All substitute parts (FQA13N80-F109 at 12.6A, APT11F80B at 12A, STW12NK80Z at 10.5A, STW11NM80 at 11A) have lower continuous drain current ratings than the IXFQ14N80P at 14A. Applications operating at or near 14A continuous current require thermal analysis to confirm the substitute part can dissipate the resulting power without exceeding junction temperature limits. Derating curves provided in manufacturer datasheets must be consulted for specific operating conditions.

Q: Are package transitions from TO-3P to TO-247 feasible for existing designs?

A: TO-247 packages (APT11F80B, STW12NK80Z, STW11NM80) require PCB footprint redesign and mechanical mounting modifications. These packages provide improved thermal performance through larger lead geometry and enhanced heat spreading. Package transition is feasible for new designs or redesign cycles but requires layout validation and thermal testing.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET. The IXFQ14N80P requires 61 nC, while substitutes range from 43.6 nC (STW11NM80) to 88 nC (FQA13N80-F109). Lower gate charge reduces switching losses and allows faster switching speeds. Higher gate charge increases driver power dissipation and may require gate driver circuit adjustments. Driver circuits must supply sufficient current to meet the specified gate charge within the required switching time.

Q: What is the significance of Rds On variation among substitute parts?

A: On-state resistance (Rds On) directly affects conduction losses and thermal dissipation. The IXFQ14N80P specifies 720mOhm at 500mA and 10V. Substitutes range from 400mOhm (STW11NM80) to 900mOhm (APT11F80B). Lower Rds On reduces I²R losses and junction temperature rise. Applications with high continuous current benefit from lower Rds On values. Thermal analysis must account for the specific Rds On value and operating current to ensure junction temperature remains within limits.

Q: Are all substitute parts suitable for high-temperature applications?

A: All parts support the -55°C to 150°C operating range of the IXFQ14N80P, with STW11NM80 extending to -65°C minimum. However, power dissipation ratings vary significantly. The IXFQ14N80P is rated for 400W, while substitutes range from 150W (STW11NM80) to 337W (APT11F80B). High-temperature operation combined with high power dissipation requires careful thermal management. Derating curves in manufacturer datasheets specify maximum power dissipation as a function of junction temperature.

Q: What compliance certifications apply to all substitute parts?

A: All substitute parts maintain RoHS3 compliance and REACH unaffected status, matching the regulatory posture of the IXFQ14N80P. These certifications ensure compatibility with environmental regulations and procurement requirements. Moisture sensitivity level (MSL) is 1 (Unlimited) for all parts except FQA13N80-F109 (Not Applicable), indicating standard handling procedures are sufficient.

Q: How should input capacitance differences be evaluated?

A: Input capacitance (Ciss) affects gate drive circuit design and switching speed. The IXFQ14N80P specifies 3900 pF at 25V. Substitutes range from 1630 pF (STW11NM80) to 3500 pF (FQA13N80-F109). Lower input capacitance reduces gate charge and switching losses. Gate driver circuits must supply sufficient current to charge the input capacitance within the required switching time. Circuits designed for the IXFQ14N80P may require adjustment when substituting parts with significantly different Ciss values.

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