IXFQ12N80P N-Channel 800V 12A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFQ12N80P is an N-Channel 800V 12A MOSFET manufactured by IXYS in the HiPerFET™ series, housed in a TO-3P package. This device is rated for 360W maximum power dissipation and operates across a temperature range of -55°C to 150°C. The IXFQ12N80P is classified as obsolete, necessitating identification of active equivalent and substitute components for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility across drain-source voltage, continuous drain current, gate charge characteristics, and thermal performance parameters while accommodating different package configurations.

Substiute Parts

IXFQ12N80P

IXYSIn Stock: 1041IXFQ12N80P Datasheet

Current PartRFQ

APT11F80B

Microchip TechnologyIn Stock: 687APT11F80B Datasheet

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FQA13N80-F109

onsemiIn Stock: 28768FQA13N80-F109 Datasheet

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STW10NK80Z

STMicroelectronicsIn Stock: 10124STW10NK80Z Datasheet

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STW12NK80Z

STMicroelectronicsIn Stock: 1574STW12NK80Z Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IXFQ12N80P is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

• Drain to Source Voltage (Vdss): Must equal 800V
• Continuous Drain Current (Id) @ 25°C: Must be ≥12A
• Gate Charge (Qg) @ 10V: Must be ≤100nC for switching performance compatibility
• Operating Temperature Range: Must span -55°C to 150°C minimum
• FET Type: Must be N-Channel
• Technology: Must be MOSFET (Metal Oxide)
• Mounting Type: Must be Through Hole

Secondary Compatibility Factors:

• Rds On (Max) @ 10V: Lower or equivalent values indicate improved performance
• Power Dissipation (Max): Higher values provide thermal margin
• Package configurations: TO-3P, TO-3PN, and TO-247 packages are mechanically and electrically compatible through appropriate PCB layout adaptation

All identified substitute parts meet or exceed the primary substitution criteria. Package differences (TO-3P, TO-3PN, TO-247) require PCB redesign but do not affect electrical functionality.

Parameter Comparison

Engineering Selection Recommendations

FQA13N80-F109 (onsemi)

The FQA13N80P-F109 is an active product with ROHS3 compliance and REACH unaffected status. It provides 12.6A continuous drain current, exceeding the IXFQ12N80P specification by 0.6A. The device features improved Rds On performance at 750mOhm versus 850mOhm, reducing conduction losses. Gate charge of 88nC is within acceptable switching performance parameters. The TO-3PN package is mechanically compatible with TO-3P through standard PCB footprint adaptation. Power dissipation of 300W is lower than the original part, requiring thermal analysis for high-power applications. This substitute is suitable for direct replacement in applications where the reduced power dissipation margin is acceptable.

APT11F80B (Microchip Technology)

The APT11F80B is an active product with ROHS3 compliance and REACH unaffected status. It maintains 12A continuous drain current matching the original specification. Rds On of 900mOhm is slightly higher than the IXFQ12N80P, resulting in marginally increased conduction losses. Gate charge of 80nC supports efficient switching. The TO-247 [B] package requires PCB redesign but provides superior thermal performance through enhanced lead geometry. Power dissipation of 337W provides adequate thermal margin for most applications. This substitute is suitable for applications where package flexibility and thermal management are priorities.

STW10NK80Z (STMicroelectronics)

The STW10NK80Z is an active product with ROHS3 compliance and REACH unaffected status. Continuous drain current of 9A is below the IXFQ12N80P specification by 3A, limiting suitability to applications with reduced current requirements. Rds On of 900mOhm and gate charge of 72nC are acceptable. Power dissipation of 160W is significantly lower, restricting use to low-power applications. The TO-247-3 package requires PCB redesign. This substitute is applicable only for designs with maximum current requirements of 9A or less.

STW12NK80Z (STMicroelectronics)

The STW12NK80Z is an active product with ROHS3 compliance and REACH unaffected status. Continuous drain current of 10.5A is below the IXFQ12N80P specification by 1.5A but acceptable for applications with reduced current headroom. Rds On of 750mOhm provides improved conduction efficiency. Gate charge of 87nC supports switching performance. Power dissipation of 190W is lower than the original part, requiring thermal verification. The TO-247-3 package requires PCB redesign. This substitute is suitable for applications with maximum current requirements of 10.5A or less and where improved Rds On performance is beneficial.

Frequently Asked Questions (FAQ)

Q: Can the FQA13N80-F109 directly replace the IXFQ12N80P without PCB modification?

A: The FQA13N80-F109 uses a TO-3PN package versus the IXFQ12N80P TO-3P package. While both are three-pin through-hole packages with similar pin configurations, PCB footprint verification is required. Pin spacing and lead geometry may differ, necessitating footprint adaptation. Electrical functionality is compatible.

Q: What is the impact of different Rds On values on circuit performance?

A: Rds On determines conduction losses in the MOSFET. Lower Rds On values (FQA13N80-F109 at 750mOhm, STW12NK80Z at 750mOhm) reduce power dissipation and heat generation compared to the original 850mOhm specification. Higher Rds On values (APT11F80B and STW10NK80Z at 900mOhm) increase conduction losses. Selection depends on thermal budget and efficiency requirements.

Q: Why do some substitutes have lower power dissipation ratings than the IXFQ12N80P?

A: Power dissipation ratings reflect thermal performance under specific test conditions and package thermal resistance. Lower ratings do not indicate inferior devices but rather different thermal characteristics. The STW10NK80Z (160W) and STW12NK80Z (190W) are suitable for applications within their power dissipation limits. Applications requiring the full 360W capability should use FQA13N80-F109 (300W) or APT11F80B (337W).

Q: Is gate charge compatibility critical for substitution?

A: Gate charge affects switching speed and driver circuit requirements. The IXFQ12N80P specifies 51nC at 10V. Substitute parts range from 72nC to 88nC. Higher gate charge increases switching losses and may require driver circuit adjustment. All substitutes remain within acceptable switching performance parameters for standard gate driver circuits rated for 100nC or higher.

Q: Can the STW10NK80Z be used in applications requiring 12A continuous current?

A: No. The STW10NK80Z is rated for 9A continuous drain current, which is 3A below the IXFQ12N80P specification. Using this device in 12A applications will exceed its current rating, causing excessive junction temperature rise and potential device failure. Use only in applications with maximum current requirements of 9A or less.

Q: What compliance certifications are maintained across all substitute parts?

A: All substitute parts (FQA13N80-F109, APT11F80B, STW10NK80Z, STW12NK80Z) are ROHS3 compliant and REACH unaffected, matching the original IXFQ12N80P compliance status. All devices are classified under ECCN EAR99 and HTSUS 8541.29.0095.

Q: Are there thermal management differences between TO-3P and TO-247 packages?

A: TO-247 packages (APT11F80B, STW10NK80Z, STW12NK80Z) typically provide superior thermal performance through enhanced lead geometry and larger copper pad areas. TO-3P and TO-3PN packages (IXFQ12N80P, FQA13N80-F109) offer compact form factors. Package selection depends on thermal requirements and PCB layout constraints.