IXFQ10N80P Equivalent & Substitute Parts

Part Overview

The IXFQ10N80P is an N-Channel MOSFET rated for 800V drain-to-source voltage with 10A continuous drain current at 25°C. Manufactured by IXYS as part of the HiPerFET™ series, this device is packaged in TO-3P and features 300W maximum power dissipation. The part is classified as obsolete, necessitating identification of equivalent alternatives for ongoing system support and new designs requiring similar electrical characteristics.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	800	V
Continuous Drain Current (Id) @ 25°C	10	A
Rds On (Max) @ Id, Vgs	1.1	Ohm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs	40	nC @ 10V
Vgs (Max)	±30	V
Power Dissipation (Max)	300	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Through Hole
Package	TO-3P

Substitute Part Grouping Explanation

Substitution of the IXFQ10N80P is determined by the following critical electrical parameters: Drain-to-Source Voltage (Vdss) of 800V, N-Channel FET type, MOSFET technology, and Through Hole mounting configuration. Substitute parts must maintain the 800V Vdss rating to ensure compatibility in high-voltage applications. The continuous drain current, on-resistance characteristics, gate charge, and power dissipation ratings are secondary selection criteria that determine suitability for specific circuit requirements.

The identified substitute parts share the core voltage rating and FET topology while offering variations in current handling, on-resistance, and thermal performance. These variations allow selection based on application-specific demands such as switching frequency, thermal management capability, and current requirements.

Parameter Comparison

Parameter	IXFQ10N80P	APT11F80B	STW10NK80Z
Manufacturer	IXYS	Microchip Technology	STMicroelectronics
Drain to Source Voltage (Vdss)	800V	800V	800V
Continuous Drain Current (Id) @ 25°C	10A	12A	9A
Rds On (Max) @ Id, Vgs	1.1Ω @ 5A, 10V	900mΩ @ 6A, 10V	900mΩ @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs	40nC @ 10V	80nC @ 10V	72nC @ 10V
Vgs (Max)	±30V	±30V	±30V
Power Dissipation (Max)	300W	337W	160W
Operating Temperature Range	-55 to 150°C	-55 to 150°C	-55 to 150°C
Mounting Type	Through Hole	Through Hole	Through Hole
Package	TO-3P	TO-247 [B]	TO-247-3
Product Status	Obsolete	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Both APT11F80B and STW10NK80Z are active products with ROHS3 compliance and REACH unaffected status, providing long-term availability and regulatory compliance advantages over the obsolete IXFQ10N80P.

The APT11F80B (Microchip Technology) offers the highest continuous drain current at 12A and maximum power dissipation at 337W, making it suitable for applications requiring higher current capacity or thermal headroom. The lower on-resistance of 900mΩ at 6A, 10V reduces conduction losses compared to the IXFQ10N80P. However, the gate charge is doubled at 80nC, which may increase switching losses in high-frequency applications.

The STW10NK80Z (STMicroelectronics) provides a current rating of 9A, which approaches the original 10A specification. The on-resistance of 900mΩ at 4.5A, 10V is comparable to the APT11F80B. The gate charge of 72nC is lower than the APT11F80B but higher than the original part, representing a compromise between switching speed and current handling. The maximum power dissipation of 160W is lower than both alternatives, requiring thermal design consideration in high-power applications.

Package differences exist: the IXFQ10N80P uses TO-3P, while both substitutes use TO-247 variants. PCB layout and thermal management modifications are necessary when transitioning between these packages.

Frequently Asked Questions (FAQ)

Q: Can the APT11F80B directly replace the IXFQ10N80P without circuit modifications?

A: Electrical substitution is possible due to matching Vdss (800V), Vgs (±30V), and operating temperature range (-55 to 150°C). However, package differences between TO-3P and TO-247 [B] require PCB layout changes and thermal management reassessment. The higher gate charge (80nC vs. 40nC) may affect gate driver performance in high-frequency switching circuits.

Q: What are the implications of the lower power dissipation rating of the STW10NK80Z?

A: The STW10NK80Z is rated for 160W maximum power dissipation compared to 300W for the IXFQ10N80P. Applications operating near the original thermal limits require thermal design verification. The lower rating does not preclude substitution in applications with adequate thermal management or lower power requirements.

Q: How do on-resistance differences affect circuit performance?

A: The IXFQ10N80P has 1.1Ω on-resistance at 5A, 10V. Both substitutes offer 900mΩ at their respective current ratings, representing lower conduction losses. This improvement reduces heat generation and improves efficiency, particularly in high-current applications.

Q: Are there gate driver compatibility concerns with the substitute parts?

A: All three parts share identical maximum gate voltage (±30V) and similar gate threshold voltage ranges. Gate charge differences (40nC for IXFQ10N80P, 72-80nC for substitutes) may require gate driver current capability verification. Higher gate charge demands increased driver current for equivalent switching speed.

Q: What package considerations apply when substituting TO-3P with TO-247?

A: TO-3P and TO-247 packages have different pin configurations, mounting footprints, and thermal characteristics. PCB redesign is required. TO-247 packages typically offer improved thermal performance through enhanced lead design. Mechanical mounting and heatsink interfaces must be re-evaluated.

Q: Are all substitute parts compliant with current regulatory standards?

A: Both APT11F80B and STW10NK80Z are ROHS3 compliant and REACH unaffected, meeting current regulatory requirements. The obsolete IXFQ10N80P does not provide equivalent long-term compliance assurance for new designs.

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