IXFP8N85XM N-Channel 850V 8A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFP8N85XM is an N-Channel MOSFET manufactured by IXYS, rated for 850V drain-to-source voltage with 8A continuous drain current at 25°C. This device operates in the HiPerFET™ series and is housed in a TO-220 Isolated Tab package for through-hole mounting applications. The part is Active in product status with full RoHS3 compliance and REACH unaffected designation.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges while maintaining compatible package configurations and thermal characteristics. Alternative devices may be required due to inventory availability, supply chain considerations, or design optimization within acceptable performance margins.

Substiute Parts

IXFP8N85XM

IXYSIn Stock: 2526IXFP8N85XM Datasheet

Current PartRFQ

STF13N95K3

STMicroelectronicsIn Stock: 2194STF13N95K3 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IXFP8N85XM is determined by the following critical parameters:

Voltage Rating Compatibility: The substitute device must maintain a Vdss rating equal to or greater than 850V to ensure safe operation in the application circuit. Higher voltage ratings provide additional design margin.

Current Handling Capacity: The continuous drain current (Id) at 25°C must meet or exceed 8A to support the load requirements. Devices with higher current ratings provide thermal headroom.

On-State Resistance (Rds On): The maximum on-state resistance must not exceed the specified value at the rated gate-source voltage (10V) to maintain acceptable power dissipation and thermal performance.

Gate Charge (Qg): Lower gate charge values reduce switching losses and driver circuit stress. Devices with comparable or lower gate charge are preferred.

Power Dissipation Rating: The maximum power dissipation capability must support the thermal requirements of the application.

Package Configuration: The substitute must use a compatible through-hole package (TO-220 variant) to ensure mechanical fit and thermal interface compatibility.

Compliance Status: Both RoHS3 compliance and REACH unaffected status must be maintained.

Parameter Comparison

Engineering Selection Recommendations

The STF13N95K3 manufactured by STMicroelectronics qualifies as a functional substitute for the IXFP8N85XM based on the following engineering criteria:

Voltage and Current Ratings: The STF13N95K3 provides a higher Vdss rating of 950V compared to the 850V specification of the IXFP8N85XM, offering increased voltage margin. The continuous drain current rating of 10A exceeds the 8A requirement, providing additional current capacity.

On-State Resistance: Both devices maintain identical Rds On specifications of 850 mOhm at 10V gate-source voltage, ensuring equivalent conduction losses within their respective current operating points.

Thermal Performance: The STF13N95K3 offers 40W maximum power dissipation compared to 33W for the IXFP8N85XM, supporting higher thermal loads.

Temperature Range: Both devices operate across the identical temperature range of -55°C to 150°C (TJ), ensuring consistent performance across environmental conditions.

Compliance and Status: Both parts maintain Active product status, RoHS3 compliance, and REACH unaffected designation, meeting regulatory requirements for equivalent applications.

Package Consideration: The STF13N95K3 uses a TO-220FP package (Full Pack) while the IXFP8N85XM uses TO-220 Isolated Tab. Both are through-hole TO-220 variants with compatible mechanical footprints and thermal interface characteristics for standard PCB mounting.

Frequently Asked Questions (FAQ)

Q: Can the STF13N95K3 directly replace the IXFP8N85XM in existing circuit designs?

A: The STF13N95K3 is electrically compatible as a substitute. Both devices share identical gate-source voltage limits (±30V), matching operating temperature ranges (-55°C to 150°C), and equivalent on-state resistance at 10V drive voltage. The higher voltage and current ratings of the STF13N95K3 provide design margin. PCB layout modifications are not required due to compatible TO-220 package footprints.

Q: What is the significance of the gate charge difference between these devices?

A: The IXFP8N85XM has a gate charge of 17 nC at 10V, while the STF13N95K3 has 51 nC at 10V. Gate charge directly affects switching speed and driver circuit requirements. The higher gate charge of the STF13N95K3 requires longer switching times and may increase driver power consumption. Applications with stringent switching frequency requirements should evaluate this parameter against circuit specifications.

Q: Are there package differences that affect thermal performance?

A: The IXFP8N85XM uses a TO-220 Isolated Tab package, while the STF13N95K3 uses a TO-220FP (Full Pack) configuration. Both are through-hole TO-220 variants with compatible mechanical mounting. The isolated tab design of the IXFP8N85XM provides electrical isolation between the tab and the drain connection, while the full pack design of the STF13N95K3 connects the tab directly to the drain. Thermal interface performance is comparable for standard heatsink mounting applications.

Q: Do both devices meet the same regulatory compliance standards?

A: Yes. Both the IXFP8N85XM and STF13N95K3 are RoHS3 compliant and REACH unaffected, meeting equivalent regulatory requirements for electronic component applications.

Q: What are the key parameters that determine substitution eligibility?

A: Substitution is determined by: (1) Drain-to-source voltage rating equal to or greater than 850V, (2) Continuous drain current at 25°C equal to or greater than 8A, (3) On-state resistance not exceeding 850 mOhm at 10V gate-source voltage, (4) Compatible through-hole TO-220 package configuration, (5) Operating temperature range of -55°C to 150°C, and (6) Active product status with RoHS3 and REACH compliance.

Q: How do the power dissipation ratings compare?

A: The IXFP8N85XM is rated for 33W maximum power dissipation at case temperature, while the STF13N95K3 is rated for 40W. The higher rating of the STF13N95K3 allows operation at higher power levels or provides additional thermal margin in existing applications. Heatsink selection should be based on the specific application's thermal requirements.