IXFP8N50P3 N-Channel MOSFET 500V 8A Equivalent & Substitute Parts

Part Overview

The IXFP8N50P3 is an N-Channel MOSFET rated for 500V drain-to-source voltage with 8A continuous drain current at 25°C. This device is packaged in a TO-220-3 through-hole configuration and is designed for high-voltage switching applications. The part operates across a temperature range of -55°C to 150°C (TJ) with a maximum power dissipation of 180W.

The IXFP8N50P3 is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this component.

Substiute Parts

IXFP8N50P3

IXYSIn Stock: 1051IXFP8N50P3 Datasheet

Current PartRFQ

IXFP12N50P

IXYSIn Stock: 1223IXFP12N50P Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFP8N50P3 is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

• Drain to Source Voltage (Vdss) must equal or exceed 500V
• FET type must be N-Channel
• Technology must be MOSFET (Metal Oxide)
• Gate voltage rating (Vgs Max) must be ±30V or greater
• Operating temperature range must encompass -55°C to 150°C

Mechanical Compatibility Criteria:

• Package type must be TO-220-3 through-hole configuration
• Mounting type must be through-hole

Performance Considerations:

• Continuous drain current (Id) at 25°C may be equal to or greater than 8A
• On-resistance (Rds On) characteristics must support the application's switching requirements
• Power dissipation capability must be sufficient for the thermal environment

The IXFP12N50P meets all substitution criteria and is classified as an active product with enhanced current and power handling capabilities.

Parameter Comparison

Engineering Selection Recommendations

IXFP12N50P as Primary Substitute:

The IXFP12N50P is the manufacturer-recommended substitute for the IXFP8N50P3. Both devices share identical voltage ratings (500V Vdss), identical gate voltage specifications (±30V Vgs Max), and identical package configurations (TO-220-3 through-hole). Both operate across the same temperature range (-55°C to 150°C TJ).

The IXFP12N50P is classified as an active product with current production status, ensuring long-term availability and supply chain continuity. Both parts maintain ROHS3 compliance, MSL Level 1 (Unlimited), and REACH Unaffected status, satisfying regulatory and environmental requirements.

The IXFP12N50P provides enhanced performance characteristics: 12A continuous drain current versus 8A, 200W power dissipation versus 180W, and improved on-resistance (500 mOhm @ 6A, 10V versus 800 mOhm @ 4A, 10V). These enhancements support higher current applications and improved thermal performance without compromising compatibility with existing circuit designs.

Frequently Asked Questions (FAQ)

Q: Can the IXFP12N50P directly replace the IXFP8N50P3 in existing designs?

A: Yes. Both devices share identical voltage ratings (500V Vdss), gate voltage specifications (±30V Vgs Max), and TO-220-3 package configurations. The IXFP12N50P provides equal or superior performance across all critical electrical parameters. No circuit modifications are required for direct substitution.

Q: What are the key differences between the IXFP8N50P3 and IXFP12N50P?

A: The primary differences are continuous drain current (8A versus 12A), power dissipation (180W versus 200W), on-resistance (800 mOhm @ 4A, 10V versus 500 mOhm @ 6A, 10V), gate charge (13 nC versus 29 nC @ 10V), and input capacitance (705 pF versus 1830 pF @ 25V). The IXFP12N50P is an active product; the IXFP8N50P3 is obsolete.

Q: Are there any thermal considerations when substituting the IXFP12N50P for the IXFP8N50P3?

A: Both devices operate across the same temperature range (-55°C to 150°C TJ). The IXFP12N50P has a higher power dissipation rating (200W versus 180W), indicating improved thermal capability. Existing thermal management solutions designed for the IXFP8N50P3 remain valid for the IXFP12N50P.

Q: Do both parts meet the same regulatory and compliance standards?

A: Yes. Both the IXFP8N50P3 and IXFP12N50P are ROHS3 compliant, carry MSL Level 1 (Unlimited) moisture sensitivity ratings, and are REACH Unaffected. Both are classified under ECCN EAR99 and HTSUS 8541.29.0095.

Q: What is the impact of increased gate charge in the IXFP12N50P?

A: The IXFP12N50P has higher gate charge (29 nC versus 13 nC @ 10V) and input capacitance (1830 pF versus 705 pF @ 25V). These parameters affect gate drive circuit design and switching speed. Applications with gate drive circuits designed for the IXFP8N50P3 must evaluate whether the increased capacitive loading is compatible with existing driver specifications.

Q: Is the IXFP12N50P available in the same packaging as the IXFP8N50P3?

A: Yes. Both devices are packaged in TO-220-3 through-hole configuration. The IXFP12N50P is supplied in tube packaging, while the IXFP8N50P3 packaging format is not specified in the provided data. Both are mechanically compatible with existing PCB layouts and mounting hardware.