IXFP7N80PM N-Channel 800V 3.5A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFP7N80PM is an N-Channel metal oxide semiconductor field-effect transistor (MOSFET) manufactured by IXYS, rated for 800V drain-to-source voltage with 3.5A continuous drain current at 25°C. This device is part of the HiPerFET™ series and is housed in a TO-220-3 through-hole package. The part is currently active in production with full RoHS3 compliance and REACH unaffected status.

Equivalent and substitute parts are identified based on matching or exceeding the critical electrical and mechanical parameters that define the functional requirements of this component. Substitutes must maintain compatibility with the TO-220-3 package footprint and support the same voltage and current operating ranges.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	800	V
Continuous Drain Current (Id) @ 25°C	3.5	A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs	1.44	Ω @ 3.5A, 10V
Gate Threshold Voltage (Vgs(th) Max) @ Id	5	V @ 1mA
Gate Charge (Qg Max) @ Vgs	32	nC @ 10V
Power Dissipation (Max)	50	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-220-3	Through Hole
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitute parts for the IXFP7N80PM are qualified based on the following criteria:

Mandatory Matching Parameters:

Drain-to-Source Voltage (Vdss): 800V minimum
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package: TO-220-3 or compatible TO-220-3 variant
Mounting Type: Through Hole
Operating Temperature Range: -55°C to 150°C minimum

Functional Compatibility Parameters:

Continuous Drain Current (Id) @ 25°C: 3.5A or greater
On-State Resistance (Rds On): Equal to or lower than 1.44Ω at rated conditions
Gate Threshold Voltage (Vgs(th)): Within acceptable gate drive voltage range
Power Dissipation: Sufficient for application requirements

All substitute parts listed maintain 800V Vdss rating, N-Channel configuration, through-hole mounting, and compatible package geometry. Each substitute meets or exceeds the 3.5A continuous drain current specification and operates within the -55°C to 150°C temperature range. All parts carry RoHS3 compliance and REACH unaffected status.

Parameter Comparison

Parameter	IXFP7N80PM (IXYS)	IPP80R1K4P7XKSA1 (Infineon)	STF6N80K5 (STMicroelectronics)	STP7NK80ZFP (STMicroelectronics)
Drain-to-Source Voltage (Vdss)	800V	800V	800V	800V
Continuous Drain Current (Id) @ 25°C	3.5A	4A	4.5A	5.2A
On-State Resistance (Rds On Max) @ Vgs 10V	1.44Ω @ 3.5A	1.4Ω @ 1.4A	1.6Ω @ 2A	1.8Ω @ 2.6A
Gate Threshold Voltage (Vgs(th) Max)	5V @ 1mA	3.5V @ 70µA	5V @ 100µA	4.5V @ 100µA
Gate Charge (Qg Max) @ 10V	32nC	10nC	13nC	56nC
Input Capacitance (Ciss Max)	1890pF @ 25V	250pF @ 500V	270pF @ 100V	1138pF @ 25V
Power Dissipation (Max)	50W	32W	25W	30W
Operating Temperature Range	-55°C to 150°C	-55°C to 150°C	-55°C to 150°C	-55°C to 150°C
Package / Case	TO-220-3	TO-220-3	TO-220-3 Full Pack	TO-220-3 Full Pack
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected

Engineering Selection Recommendations

All listed substitute parts are active products with current manufacturing status and full regulatory compliance. Selection among these alternatives depends on application-specific requirements within the following framework:

IPP80R1K4P7XKSA1 (Infineon CoolMOS™): This substitute offers the lowest gate charge (10nC) and reduced input capacitance (250pF @ 500V), resulting in faster switching characteristics and lower gate drive power requirements. The 4A continuous drain current exceeds the IXFP7N80PM specification. Power dissipation rating of 32W is lower than the original part, requiring thermal design consideration for high-power applications.

STF6N80K5 (STMicroelectronics SuperMESH5™): This substitute provides 4.5A continuous drain current with moderate gate charge (13nC) and input capacitance (270pF @ 100V). The 25W power dissipation rating is the lowest among all substitutes, suitable for applications with thermal constraints. Gate threshold voltage matches the original part at 5V.

STP7NK80ZFP (STMicroelectronics SuperMESH™): This substitute delivers the highest continuous drain current (5.2A) and operates within the same gate voltage range (±30V) as the original IXFP7N80PM. Gate charge is elevated at 56nC, and input capacitance is comparable to the original part (1138pF @ 25V). Power dissipation of 30W provides moderate thermal headroom.

All substitutes maintain full RoHS3 compliance and REACH unaffected status, ensuring regulatory compatibility with the original part.

Frequently Asked Questions (FAQ)

Q: Can the IPP80R1K4P7XKSA1 directly replace the IXFP7N80PM in all applications?

A: The IPP80R1K4P7XKSA1 meets the core electrical requirements (800V Vdss, 4A Id exceeding 3.5A specification) and package compatibility (TO-220-3). However, the lower power dissipation rating (32W versus 50W) and significantly reduced gate charge (10nC versus 32nC) may affect thermal performance and gate drive circuit design. Application-specific thermal and switching frequency analysis is required.

Q: What is the difference between TO-220-3 and TO-220-3 Full Pack?

A: Both package designations refer to the same three-lead through-hole TO-220 footprint. The "Full Pack" designation indicates a variant with full-sized leads. All listed parts are mechanically compatible with standard TO-220-3 PCB layouts.

Q: Which substitute has the lowest on-state resistance?

A: The IPP80R1K4P7XKSA1 has the lowest on-state resistance at 1.4Ω (measured at 1.4A, 10V). The IXFP7N80PM is rated at 1.44Ω (at 3.5A, 10V). Lower on-state resistance reduces conduction losses and heat generation during operation.

Q: Are all substitutes suitable for high-frequency switching applications?

A: The IPP80R1K4P7XKSA1 and STF6N80K5 are optimized for high-frequency operation due to lower gate charge values (10nC and 13nC respectively). The STP7NK80ZFP has elevated gate charge (56nC), making it more suitable for lower-frequency applications or circuits with robust gate drive capability.

Q: Do all substitutes support the same gate voltage range as the original IXFP7N80PM?

A: The IXFP7N80PM and STP7NK80ZFP both support ±30V gate voltage. The IPP80R1K4P7XKSA1 supports ±20V, and the STF6N80K5 supports 30V (single polarity). Gate drive circuits must be verified for compatibility with the selected substitute.

Q: What is the impact of different input capacitance values on circuit design?

A: Input capacitance affects gate charge requirements and switching speed. The IPP80R1K4P7XKSA1 has the lowest input capacitance (250pF @ 500V), enabling faster switching with lower gate drive power. The IXFP7N80PM and STP7NK80ZFP have higher input capacitance (1890pF and 1138pF respectively), requiring more robust gate drive circuits but offering more stable switching characteristics.

Q: Are moisture sensitivity levels equivalent across all parts?

A: The IXFP7N80PM, STF6N80K5, and STP7NK80ZFP are rated MSL 1 (Unlimited). The IPP80R1K4P7XKSA1 is rated Not Applicable. All parts meet the same moisture handling requirements for standard industrial storage and assembly processes.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message