IXFP7N60P3 N-Channel 600V 7A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFP7N60P3 is an N-Channel 600V 7A MOSFET manufactured by IXYS in the HiPerFET™ and Polar3™ series. This device is rated for 180W power dissipation and features a through-hole TO-220-3 package. The part is currently classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support, maintenance, and production continuity. Substitute parts must maintain compatibility with the original electrical specifications and mechanical form factor while offering active product status and continued availability.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	7	A
Power Dissipation (Max)	180	W
Rds On (Max) @ 500mA, 10V	1.15	Ohm
Gate Charge (Qg) @ 10V	13.3	nC
Operating Temperature Range	-55 to 150	°C
Mounting Type	Through Hole	—
Package / Case	TO-220-3	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the IXFP7N60P3 is determined by the following critical parameters:

Voltage Rating (Vdss): The drain-to-source voltage must equal or exceed 600V. Parts rated at 600V provide direct voltage compatibility. Parts rated above 600V (such as 650V or 800V) are electrically compatible but represent higher voltage-rated alternatives suitable for applications with elevated voltage margins.

Current Rating (Id): The continuous drain current must meet or exceed 7A at 25°C. Parts rated at 7A or higher maintain current-handling capability. Higher current ratings provide design margin and thermal headroom.

Package Type: The TO-220-3 through-hole package is the mechanical requirement. Substitute parts must use identical or compatible through-hole TO-220 variants to ensure PCB mounting compatibility.

Technology: All substitute parts must be Metal Oxide MOSFET (MOSFET) technology with N-Channel configuration to maintain functional equivalence.

Operating Temperature Range: The -55°C to 150°C range must be supported by substitute parts to ensure thermal compatibility across the full operating envelope.

Compliance: RoHS3 compliance and REACH status are mandatory for regulatory alignment with the original part.

Parameter Comparison

Parameter	IXFP7N60P3	IXFP10N60P	STP9NK65Z	IRFBC40PBF	IPP80R900P7XKSA1	IPP80R1K2P7XKSA1
Manufacturer	IXYS	IXYS	STMicroelectronics	Vishay Siliconix	Infineon Technologies	Infineon Technologies
Vdss (V)	600	600	650	600	800	800
Id @ 25°C (A)	7	10	6.4	6.2	6	4.5
Power Dissipation (W)	180	200	125	125	45	37
Rds On (Max) @ 10V (Ohm)	1.15 @ 500mA	0.74 @ 5A	1.2 @ 3.2A	1.2 @ 3.7A	0.9 @ 2.2A	1.2 @ 1.7A
Gate Charge (nC) @ 10V	13.3	32	41	60	15	11
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-220-3	TO-220-3	TO-220	TO-220AB	PG-TO220-3	PG-TO220-3
Product Status	Obsolete	Active	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Substitute: IXFP10N60P

The IXFP10N60P is the manufacturer-recommended substitute for the IXFP7N60P3. Both parts are IXYS HiPerFET™ series devices with identical 600V voltage rating and TO-220-3 package. The IXFP10N60P provides 10A continuous drain current, exceeding the original 7A specification, and delivers 200W power dissipation versus 180W. This part maintains full electrical and mechanical compatibility while offering improved current capacity and thermal performance. Product status is active with full RoHS3 compliance and REACH unaffected designation.

Secondary Substitutes: STP9NK65Z and IRFBC40PBF

Both STP9NK65Z (STMicroelectronics) and IRFBC40PBF (Vishay Siliconix) meet the core substitution criteria with 600V+ voltage ratings, 6+ ampere current ratings, and TO-220 package compatibility. The STP9NK65Z operates at 650V with 6.4A rating and 125W dissipation. The IRFBC40PBF operates at 600V with 6.2A rating and 125W dissipation. Both parts are active products with RoHS3 compliance. The IRFBC40PBF carries REACH affected status, requiring verification against specific application regulatory requirements.

Higher Voltage Alternatives: IPP80R900P7XKSA1 and IPP80R1K2P7XKSA1

The Infineon CoolMOS™ P7 series parts (IPP80R900P7XKSA1 and IPP80R1K2P7XKSA1) operate at 800V, providing elevated voltage margin. These parts are suitable for applications requiring higher voltage headroom. The IPP80R900P7XKSA1 provides 6A at 45W dissipation, while the IPP80R1K2P7XKSA1 provides 4.5A at 37W dissipation. Both are active products with full compliance certifications. Selection of these parts is appropriate only when the application circuit topology supports 800V operation.

Compliance Verification

All recommended substitutes maintain ROHS3 compliance and operate across the -55°C to 150°C temperature range. The IRFBC40PBF is REACH affected; applications subject to REACH regulations must confirm compatibility with specific substance restrictions before selection.

Frequently Asked Questions (FAQ)

Q: Can the IXFP10N60P directly replace the IXFP7N60P3 without circuit modification?

A: Yes. The IXFP10N60P is the manufacturer-recommended substitute with identical voltage rating (600V), same package (TO-220-3), and compatible gate drive characteristics. The higher current rating (10A vs. 7A) and power dissipation (200W vs. 180W) provide design margin without requiring circuit changes.

Q: What is the primary difference between the IXFP10N60P and the Infineon IPP80R900P7XKSA1?

A: The IXFP10N60P operates at 600V with 10A continuous current, while the IPP80R900P7XKSA1 operates at 800V with 6A continuous current. The IXFP10N60P is the direct voltage-class substitute. The Infineon part is a higher voltage alternative suitable only for applications designed for 800V operation.

Q: Are TO-220 and TO-220-3 packages mechanically interchangeable?

A: TO-220 and TO-220-3 are compatible through-hole packages with identical pin spacing and mounting hole patterns. Both support standard TO-220 heatsink mounting. Mechanical interchangeability is confirmed for PCB layout purposes.

Q: Why does the IRFBC40PBF show REACH affected status while other substitutes show REACH unaffected?

A: REACH affected status indicates the part may contain substances subject to REACH regulatory restrictions. Applications operating under REACH regulations must verify the specific substance declarations provided by Vishay Siliconix before final part selection. This does not prevent use in non-REACH jurisdictions.

Q: What is the significance of gate charge (Qg) differences between substitute parts?

A: Gate charge affects gate drive circuit design and switching speed. The IXFP7N60P3 has 13.3 nC gate charge. Substitutes with higher gate charge (such as IRFBC40PBF at 60 nC) require higher gate drive current or longer switching times. Substitutes with lower gate charge (such as IPP80R1K2P7XKSA1 at 11 nC) enable faster switching. Gate drive circuit compatibility must be verified for parts with significantly different gate charge values.

Q: Can the IPP80R1K2P7XKSA1 be used in applications originally designed for the IXFP7N60P3?

A: The IPP80R1K2P7XKSA1 is suitable only if the application circuit is designed for 800V operation. The lower current rating (4.5A vs. 7A) and reduced power dissipation (37W vs. 180W) make this part unsuitable for applications requiring the full 7A current capacity of the original part. Thermal and electrical circuit analysis is required before selection.

Q: What packaging format is recommended for new production designs?

A: The IXFP10N60P is supplied in tube packaging and carries active product status, making it the recommended choice for new production designs. This part provides the best combination of direct substitution compatibility, current availability, and manufacturer support.

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