IXFP7N100P N-Channel 1000V 7A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFP7N100P is an N-Channel MOSFET manufactured by IXYS, rated for 1000V drain-to-source voltage with 7A continuous drain current at 25°C. This device is packaged in TO-220-3 through-hole configuration and is part of the HiPerFET™ series. The part is Active status and RoHS3 compliant.

Equivalent and substitute parts are identified based on matching or compatible electrical characteristics including drain-to-source voltage rating, continuous drain current, on-resistance, gate charge, and thermal specifications. Alternative packaging options and similar performance devices from other manufacturers are provided for design flexibility and supply chain alternatives.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	1000	V
Current - Continuous Drain (Id) @ 25°C	7	A
Rds On (Max) @ Id, Vgs	1.9	Ohm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs	47	nC @ 10V
Power Dissipation (Max)	300	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3	Through Hole
Vgs (Max)	±30	V
Input Capacitance (Ciss) (Max) @ Vds	2590	pF @ 25V

Substitute Part Grouping Explanation

Substitute parts for the IXFP7N100P are classified into two categories based on electrical and mechanical compatibility:

Parametric Equivalent (Same Electrical Specifications, Different Package): The IXFH7N100P maintains identical electrical characteristics including 1000V Vdss, 7A continuous drain current, 1.9Ohm Rds(on), and 300W power dissipation. The primary difference is packaging: IXFH7N100P uses TO-247-3 through-hole configuration instead of TO-220-3. This substitution is valid when board layout and thermal management accommodate the larger TO-247 footprint.

Similar Performance Devices (Comparable Electrical Characteristics, Different Voltage/Current Ratings): The STP5N95K5 and STP7N95K3 from STMicroelectronics provide alternative solutions with slightly reduced voltage ratings (950V Vdss) but maintain N-Channel MOSFET topology and through-hole mounting. These devices are suitable for applications where the full 1000V rating is not required.

Substitution logic is based on the following key parameters:

Drain-to-source voltage (Vdss) rating
Continuous drain current (Id) capability
On-resistance (Rds(on)) at specified gate voltage
Gate charge (Qg) for switching characteristics
Power dissipation capability
Operating temperature range
Package type and mounting method

Parameter Comparison

Parameter	IXFP7N100P (Main)	IXFH7N100P (Parametric Equivalent)	STP5N95K5 (Similar)	STP7N95K3 (Similar)
Manufacturer	IXYS	IXYS	STMicroelectronics	STMicroelectronics
Drain to Source Voltage (Vdss)	1000V	1000V	950V	950V
Current - Continuous Drain (Id) @ 25°C	7A	7A	3.5A	7.2A
Rds On (Max) @ Id, Vgs	1.9Ohm @ 3.5A, 10V	1.9Ohm @ 3.5A, 10V	2.5Ohm @ 1.5A, 10V	1.35Ohm @ 3.6A, 10V
Gate Charge (Qg) (Max) @ Vgs	47nC @ 10V	47nC @ 10V	12.5nC @ 10V	34nC @ 10V
Power Dissipation (Max)	300W	300W	70W	150W
Operating Temperature Range	-55 to 150°C	-55 to 150°C	-55 to 150°C	-55 to 150°C
Package Type	TO-220-3	TO-247-3	TO-220-3	TO-220-3
Vgs (Max)	±30V	±30V	±30V	±30V
Input Capacitance (Ciss) (Max) @ Vds	2590pF @ 25V	2590pF @ 25V	220pF @ 100V	1031pF @ 100V
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Product Status	Active	Active	Active	Active

Engineering Selection Recommendations

IXFH7N100P Selection Criteria: The IXFH7N100P is a direct parametric equivalent to the IXFP7N100P with identical electrical specifications. Selection of this part is appropriate when TO-247-3 package dimensions are compatible with the application's printed circuit board layout and thermal management design. Both devices are Active status, RoHS3 compliant, and manufactured by IXYS within the HiPerFET™ series. This substitution requires only package footprint verification.

STP7N95K3 Selection Criteria: The STP7N95K3 provides a viable alternative when the application voltage requirement does not exceed 950V. This device offers superior on-resistance (1.35Ohm) compared to the main part, resulting in lower conduction losses. The STP7N95K3 maintains 7.2A continuous drain current, exceeding the IXFP7N100P specification. Both devices are Active status and RoHS3 compliant. This substitution is suitable for lower-voltage applications requiring improved efficiency.

STP5N95K5 Selection Criteria: The STP5N95K5 is applicable only in applications where continuous drain current requirements do not exceed 3.5A and voltage rating of 950V is sufficient. This device exhibits the lowest gate charge (12.5nC) among the alternatives, enabling faster switching characteristics. Selection of this part requires verification that application current demands are within the 3.5A specification. Both devices are Active status and RoHS3 compliant.

All substitute parts maintain the same operating temperature range (-55°C to 150°C), gate voltage rating (±30V), and compliance certifications as the main part.

Frequently Asked Questions (FAQ)

Q: Can the IXFH7N100P directly replace the IXFP7N100P in existing designs?

A: The IXFH7N100P is a parametric equivalent with identical electrical specifications. Direct replacement is possible provided the TO-247-3 package footprint is compatible with the printed circuit board layout. Pin configuration and electrical performance are equivalent; only the physical package dimensions differ.

Q: What are the key differences between the IXFP7N100P and STP7N95K3?

A: The primary differences are voltage rating (1000V versus 950V) and on-resistance (1.9Ohm versus 1.35Ohm). The STP7N95K3 provides lower conduction losses due to superior on-resistance but is limited to 950V applications. Both devices support 7A+ continuous drain current and maintain identical operating temperature ranges.

Q: Is the STP5N95K5 suitable for applications requiring 7A continuous current?

A: No. The STP5N95K5 is rated for 3.5A continuous drain current at 25°C, which is insufficient for applications requiring 7A. The STP7N95K3 is the appropriate STMicroelectronics alternative for 7A applications.

Q: What is the significance of gate charge (Qg) differences among these devices?

A: Gate charge affects switching speed and driver circuit requirements. The IXFP7N100P and IXFH7N100P both specify 47nC gate charge, requiring identical driver circuits. The STP5N95K5 (12.5nC) enables faster switching with lower driver power consumption, while the STP7N95K3 (34nC) provides intermediate switching characteristics.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. The IXFP7N100P, IXFH7N100P, STP5N95K5, and STP7N95K3 are all RoHS3 compliant with Moisture Sensitivity Level 1 (Unlimited).

Q: What thermal considerations apply when selecting between TO-220-3 and TO-247-3 packages?

A: Both packages are through-hole configurations with identical power dissipation ratings (300W for IXYS devices). The TO-247-3 package provides a larger die-attach area and may offer improved thermal performance in specific mounting configurations. Package selection should be based on printed circuit board layout constraints and thermal management design requirements.

Q: Can the STP7N95K3 be used in a 1000V application?

A: No. The STP7N95K3 is rated for maximum 950V drain-to-source voltage. Use in 1000V applications exceeds the device specification and is not permitted.

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