IXFP76N15T2 Equivalent & Substitute Parts

Part Overview

The IXFP76N15T2 is an N-Channel MOSFET manufactured by IXYS, designed for high-current switching applications requiring 150V drain-to-source voltage capability. This device operates as an active product with full RoHS3 compliance and unlimited moisture sensitivity rating. The part is housed in a TO-220-3 through-hole package and delivers 76A continuous drain current at 25°C with 350W maximum power dissipation. Substitute parts are identified when equivalent electrical performance and mechanical compatibility are required due to component availability, supply chain constraints, or design flexibility within specified parameter tolerances.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	150	V
Continuous Drain Current (Id) @ 25°C	76	A
On-State Resistance (Rds On Max) @ Id, Vgs	20 mOhm @ 38A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id	4.5	V @ 250µA
Gate Charge (Qg Max) @ Vgs	97	nC @ 10V
Maximum Gate Voltage (Vgs Max)	±20	V
Input Capacitance (Ciss Max) @ Vds	5800	pF @ 25V
Power Dissipation (Max)	350	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-220-3	Through Hole
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the IXFP76N15T2 is determined by strict alignment of electrical and mechanical parameters. The primary substitution criteria are:

Electrical Compatibility Requirements:

Drain-to-Source Voltage (Vdss) must equal or exceed 150V
On-State Resistance (Rds On) must not exceed specified maximum values to maintain thermal performance
Gate threshold voltage and maximum gate voltage must remain within compatible ranges
Operating temperature range must support -55°C to 175°C operation

Mechanical Compatibility Requirements:

Package type must be TO-220-3 through-hole configuration
Mounting type must be through-hole
Pin configuration must match TO-220-3 standard

Compliance Requirements:

RoHS3 compliance mandatory
Moisture Sensitivity Level (MSL) of 1 (Unlimited) required
REACH Unaffected status required

The IPP200N15N3GXKSA1 qualifies as a substitute part based on matching Vdss (150V), identical package type (TO-220-3), equivalent operating temperature range (-55°C to 175°C), and identical compliance certifications (RoHS3, REACH Unaffected, MSL 1). Current rating differences and power dissipation variations are noted in the parameter comparison table below.

Parameter Comparison

Parameter	IXFP76N15T2	IPP200N15N3GXKSA1	Unit
Manufacturer	IXYS	Infineon Technologies	—
FET Type	N-Channel	N-Channel	—
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	150	150	V
Continuous Drain Current (Id) @ 25°C	76	50	A
On-State Resistance (Rds On Max) @ Id, Vgs	20 mOhm @ 38A, 10V	20 mOhm @ 50A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id	4.5 @ 250µA	4.0 @ 90µA	V
Gate Charge (Qg Max) @ Vgs	97 @ 10V	31 @ 10V	nC
Maximum Gate Voltage (Vgs Max)	±20	±20	V
Input Capacitance (Ciss Max) @ Vds	5800 @ 25V	1820 @ 75V	pF
Power Dissipation (Max)	350	150	W
Operating Temperature Range	-55 to 175	-55 to 175	°C
Package Type	TO-220-3	TO-220-3	—
Mounting Type	Through Hole	Through Hole	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	—
REACH Status	REACH Unaffected	REACH Unaffected	—
Product Status	Active	Active	—

Engineering Selection Recommendations

IXFP76N15T2 Selection Criteria: The IXFP76N15T2 is selected for applications requiring maximum continuous drain current of 76A and maximum power dissipation of 350W. This device is appropriate for high-current switching circuits where thermal headroom and current capacity are primary design constraints. The part maintains active product status with full RoHS3 compliance and unlimited moisture sensitivity rating, ensuring long-term supply availability and environmental regulatory compliance.

IPP200N15N3GXKSA1 Selection Criteria: The IPP200N15N3GXKSA1 is selected for applications where continuous drain current requirements do not exceed 50A and power dissipation does not exceed 150W. This substitute part maintains identical voltage rating (150V Vdss), identical package configuration (TO-220-3), and identical operating temperature range (-55°C to 175°C). The device exhibits lower gate charge (31 nC versus 97 nC) and lower input capacitance (1820 pF versus 5800 pF), which may reduce gate drive requirements in switching applications. Both parts maintain active product status and full compliance with RoHS3, REACH, and MSL requirements.

Substitution Applicability: Direct substitution of IPP200N15N3GXKSA1 for IXFP76N15T2 is applicable only when circuit design specifications permit operation within the lower current and power dissipation ratings of the substitute part. Applications requiring the full 76A continuous current or 350W power dissipation capability must use the IXFP76N15T2.

Frequently Asked Questions (FAQ)

Q: Can the IPP200N15N3GXKSA1 be used as a direct replacement for the IXFP76N15T2 in all applications?

A: No. The IPP200N15N3GXKSA1 has a maximum continuous drain current of 50A compared to 76A for the IXFP76N15T2, and maximum power dissipation of 150W versus 350W. Substitution is valid only when circuit design specifications do not exceed these lower ratings.

Q: Are the package configurations identical between these two parts?

A: Yes. Both the IXFP76N15T2 and IPP200N15N3GXKSA1 use the TO-220-3 through-hole package configuration with identical pin assignments and mechanical dimensions.

Q: Do both parts meet the same environmental and compliance standards?

A: Yes. Both parts are RoHS3 compliant, REACH Unaffected, and carry Moisture Sensitivity Level 1 (Unlimited) rating. Both maintain active product status.

Q: What is the significance of the difference in gate charge between these parts?

A: The IPP200N15N3GXKSA1 has a gate charge of 31 nC compared to 97 nC for the IXFP76N15T2. Lower gate charge reduces the energy required to drive the gate and may allow use of lower-power gate driver circuits. This difference does not affect substitution compatibility but may influence gate drive circuit design.

Q: What is the significance of the difference in input capacitance?

A: The IPP200N15N3GXKSA1 has input capacitance of 1820 pF (measured at 75V) compared to 5800 pF for the IXFP76N15T2 (measured at 25V). Lower input capacitance reduces capacitive loading on gate drive circuits and may improve switching speed. This difference does not affect substitution compatibility but may influence gate drive circuit performance.

Q: Can the IXFP76N15T2 be used in place of the IPP200N15N3GXKSA1?

A: Yes. The IXFP76N15T2 can be used as a substitute for the IPP200N15N3GXKSA1 in all applications. The higher current rating (76A versus 50A) and higher power dissipation capability (350W versus 150W) provide additional design margin. Package configuration, voltage rating, and compliance certifications are identical.

Q: What is the operating temperature range for both parts?

A: Both the IXFP76N15T2 and IPP200N15N3GXKSA1 operate across the temperature range of -55°C to 175°C (junction temperature).

Q: Are there any differences in gate threshold voltage between these parts?

A: The gate threshold voltage specifications differ slightly: IXFP76N15T2 is 4.5V (at 250µA) and IPP200N15N3GXKSA1 is 4.0V (at 90µA). Both values fall within acceptable ranges for standard gate drive circuits and do not prevent substitution.

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