IXFP5N50PM N-Channel MOSFET 500V 3.2A Equivalent & Substitute Parts

Part Overview

The IXFP5N50PM is an N-Channel MOSFET manufactured by IXYS, rated for 500V drain-to-source voltage with 3.2A continuous drain current at 25°C. This device is packaged in a Through Hole TO-220-3 configuration and is part of the HiPerFET™ and PolarHT™ series. The IXFP5N50PM is classified as Obsolete, making identification of equivalent and substitute parts essential for ongoing system support and new design alternatives.

Substiute Parts

IXFP5N50PM

IXYSIn Stock: 927IXFP5N50PM Datasheet

Current PartRFQ

IXFP8N65X2M

IXYSIn Stock: 726IXFP8N65X2M Datasheet

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AOT5N50

Alpha & Omega Semiconductor Inc.In Stock: 14140AOT5N50 Datasheet

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IRFI3205PBF

Infineon TechnologiesIn Stock: 2715IRFI3205PBF Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFP5N50PM is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

• Drain to Source Voltage (Vdss): Must equal or exceed 500V
• Continuous Drain Current (Id): Must equal or exceed 3.2A at 25°C
• Gate Voltage Range (Vgs): Must accommodate ±30V maximum
• Mounting Type: Must be Through Hole
• Package: Must be TO-220-3 or compatible TO-220 variant
• Operating Temperature Range: Must span -55°C to 150°C minimum

Secondary Compatibility Factors:

• Rds On (Max): Lower values indicate improved performance
• Gate Charge (Qg): Lower values reduce switching losses
• Input Capacitance (Ciss): Affects gate drive requirements
• Power Dissipation: Higher ratings provide thermal margin

Substitute parts are grouped based on whether they meet or exceed the primary criteria while maintaining electrical and mechanical compatibility with the original IXFP5N50PM application.

Parameter Comparison

Engineering Selection Recommendations

IXFP8N65X2M (IXYS)

This substitute exceeds the primary electrical requirements of the IXFP5N50PM. It provides 650V Vdss (130V margin above the original 500V specification) and 8A continuous drain current (2.5A above the original 3.2A requirement). The IXFP8N65X2M is classified as Active, ensuring long-term availability and supply chain continuity. It is ROHS3 compliant and maintains the same operating temperature range. The isolated tab variant of the TO-220 package provides enhanced thermal management. This part is suitable for direct substitution in applications where the higher voltage rating and current capacity do not create design conflicts.

AOT5N50 (Alpha & Omega Semiconductor Inc.)

This substitute matches the 500V Vdss specification exactly and provides 5A continuous drain current, exceeding the original 3.2A requirement by 1.8A. The AOT5N50 is packaged in TO-220-3 and maintains compatibility with the original mounting footprint. However, this part is classified as Not For New Designs, limiting its suitability for new system development. It is ROHS3 compliant. The higher gate charge (19nC versus 12.6nC) and power dissipation rating (104W versus 38W) indicate different switching characteristics. This part is applicable for legacy system maintenance where supply of the original IXFP5N50PM is unavailable.

IRFI3205PBF (Infineon Technologies)

This substitute is not electrically compatible with the IXFP5N50PM for direct substitution. The IRFI3205PBF is rated for only 55V Vdss, which is insufficient for applications requiring the original 500V specification. While it provides significantly higher current capacity (64A) and lower on-resistance (8mΩ), these advantages are negated by the voltage rating mismatch. The maximum gate voltage is limited to ±20V, below the original ±30V specification. This part is classified as Active and ROHS3 compliant but is suitable only for applications with substantially different voltage requirements.

Frequently Asked Questions (FAQ)

Q: Can the IXFP8N65X2M directly replace the IXFP5N50PM in all applications?

A: The IXFP8N65X2M meets or exceeds all primary electrical and mechanical parameters of the IXFP5N50PM. Direct substitution is possible from an electrical standpoint. However, the isolated tab variant of the TO-220 package must be verified for compatibility with the original PCB layout and thermal management design. The higher voltage rating (650V versus 500V) and current capacity (8A versus 3.2A) do not create incompatibility but may affect circuit performance if the design relies on specific device characteristics.

Q: Why is the IRFI3205PBF listed as a substitute if it has only 55V Vdss?

A: The IRFI3205PBF is included in the provided substitute list but is not electrically compatible with the IXFP5N50PM for applications requiring 500V operation. This part is suitable only for applications with substantially lower voltage requirements. Selection of this part for a 500V application would result in device failure.

Q: What is the significance of the "Not For New Designs" status of the AOT5N50?

A: The "Not For New Designs" classification indicates that the manufacturer (Alpha & Omega Semiconductor Inc.) is not recommending this part for new product development. While the AOT5N50 remains available and functional, it may have limited long-term supply guarantees or may be subject to discontinuation. This part is appropriate for maintaining existing systems but should not be selected for new designs where the IXFP8N65X2M or other Active-status alternatives are available.

Q: Are there thermal management differences between the IXFP5N50PM and its substitutes?

A: The IXFP8N65X2M features an isolated tab variant of the TO-220 package, which provides enhanced thermal isolation compared to the standard TO-220-3. The power dissipation rating of the IXFP8N65X2M (150W) is significantly higher than the original (38W), indicating improved thermal performance. The AOT5N50 has a power dissipation rating of 104W. Thermal management design should account for these differences, particularly in applications operating at elevated ambient temperatures or high duty cycles.

Q: What is the impact of gate charge differences on circuit design?

A: Gate charge (Qg) affects the energy required to switch the MOSFET and influences switching speed and losses. The IXFP5N50PM has a gate charge of 12.6nC at 10V. The IXFP8N65X2M (11nC) has slightly lower gate charge, resulting in marginally faster switching. The AOT5N50 (19nC) has higher gate charge, requiring more gate drive energy. The IRFI3205PBF (170nC) has substantially higher gate charge due to its high current rating. Gate drive circuits must be verified for compatibility with the selected substitute part.

Q: Is the ±30V maximum gate voltage specification critical for substitution?

A: The IXFP5N50PM specifies a maximum gate voltage of ±30V. The IXFP8N65X2M and AOT5N50 both support ±30V, ensuring full compatibility. The IRFI3205PBF is limited to ±20V, which may be insufficient for gate drive circuits designed for the original part. If the gate drive circuit applies voltages exceeding ±20V, the IRFI3205PBF would not be suitable.

Q: What compliance certifications should be verified for substitute parts?

A: All substitute parts listed are ROHS3 compliant, meeting environmental and hazardous substance restrictions. The IXFP5N50PM does not specify RoHS status in the provided data. All parts are REACH Unaffected and classified under ECCN EAR99 and HTSUS 8541.29.0095. Moisture Sensitivity Level (MSL) is 1 (Unlimited) for all parts, indicating no special moisture handling requirements during storage or assembly.