IXFP5N50P3 N-Channel MOSFET 500V 5A Equivalent & Substitute Parts

Part Overview

The IXFP5N50P3 is an N-Channel MOSFET manufactured by IXYS, rated for 500V drain-to-source voltage with 5A continuous drain current at 25°C. This device is part of the HiPerFET™ and Polar3™ series and is housed in a TO-220-3 through-hole package. The IXFP5N50P3 is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support and component procurement.

Substiute Parts

IXFP5N50P3

IXYSIn Stock: 1047IXFP5N50P3 Datasheet

Current PartRFQ

IXFP12N50P

IXYSIn Stock: 1223IXFP12N50P Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFP5N50P3 is determined by the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: The substitute part must maintain the 500V drain-to-source voltage (Vdss) rating to ensure safe operation in the same circuit topology.

Package Compatibility: The substitute part must use the TO-220-3 through-hole package to maintain mechanical and thermal interface compatibility with existing PCB layouts and heatsinking arrangements.

Gate Drive Compatibility: The substitute part must operate with the same 10V drive voltage specification to ensure compatibility with existing gate driver circuits.

Operating Temperature Range: The substitute part must support the -55°C to 150°C operating temperature range to maintain thermal performance across the intended application environment.

Compliance Standards: The substitute part must maintain ROHS3 compliance and REACH unaffected status to satisfy regulatory and supply chain requirements.

The IXFP12N50P meets all these substitution criteria. While it provides higher continuous drain current (12A versus 5A) and increased power dissipation capability (200W versus 114W), these represent performance enhancements rather than incompatibilities. The higher current rating and lower on-resistance provide improved thermal performance and reduced conduction losses in the same package footprint.

Parameter Comparison

Engineering Selection Recommendations

The IXFP12N50P is the designated manufacturer-recommended substitute for the obsolete IXFP5N50P3. Both devices are manufactured by IXYS and share identical voltage ratings, package configurations, and operating temperature ranges. Both parts maintain ROHS3 compliance and REACH unaffected status, satisfying regulatory requirements for new designs and component replacement.

The IXFP12N50P is classified as an active product with current manufacturing support and inventory availability, whereas the IXFP5N50P3 is obsolete. This status difference makes the IXFP12N50P the appropriate choice for new designs, redesigns, and long-term component procurement strategies.

The IXFP12N50P provides enhanced electrical performance through higher continuous drain current capability (12A versus 5A) and increased power dissipation rating (200W versus 114W). These improvements result in lower on-resistance at equivalent gate drive voltages, reducing conduction losses and thermal stress in high-current applications. The higher gate charge and input capacitance of the IXFP12N50P require proportionally increased gate driver current capability but do not introduce incompatibility with standard gate drive circuits.

Frequently Asked Questions (FAQ)

Q: Can the IXFP12N50P directly replace the IXFP5N50P3 in existing circuit designs?

A: Yes. Both devices share identical 500V voltage ratings, TO-220-3 package configurations, ±30V gate voltage ratings, and -55°C to 150°C operating temperature ranges. The IXFP12N50P operates with the same 10V drive voltage specification. Direct PCB-level substitution is mechanically and electrically compatible.

Q: What are the key differences between these two MOSFETs?

A: The IXFP12N50P provides higher continuous drain current (12A versus 5A), lower on-resistance (0.5 Ohm versus 1.65 Ohm at equivalent drive conditions), and increased power dissipation capability (200W versus 114W). The IXFP12N50P also exhibits higher gate charge (29 nC versus 6.9 nC) and input capacitance (1830 pF versus 370 pF), requiring higher gate driver current but maintaining full compatibility with standard gate drive circuits.

Q: Does the higher gate charge of the IXFP12N50P affect gate driver selection?

A: Gate driver selection must account for the increased gate charge specification. The IXFP12N50P requires approximately 4.2 times higher gate charge than the IXFP5N50P3. Existing gate drivers must provide sufficient current sourcing and sinking capability to meet switching frequency and rise/fall time requirements. Gate driver current capacity should be evaluated against the IXFP12N50P datasheet specifications.

Q: Are both parts RoHS compliant?

A: Yes. Both the IXFP5N50P3 and IXFP12N50P are ROHS3 compliant and REACH unaffected, satisfying regulatory requirements for electronic component procurement and use in regulated markets.

Q: Why is the IXFP5N50P3 classified as obsolete?

A: The IXFP5N50P3 is no longer in active production by IXYS. The IXFP12N50P represents the current active product offering in this voltage and package class, providing superior performance characteristics and ongoing manufacturing support.

Q: Can the IXFP12N50P be used in applications requiring lower current ratings?

A: Yes. The IXFP12N50P is rated for 12A continuous drain current, making it suitable for applications requiring 5A or lower. The device operates within specification at reduced current levels. The lower on-resistance of the IXFP12N50P results in reduced conduction losses compared to the IXFP5N50P3 at equivalent current levels.

Q: What is the thermal interface compatibility between these devices?

A: Both devices use the TO-220-3 through-hole package with identical mechanical dimensions and thermal interface characteristics. Heatsinking arrangements, thermal interface materials, and mounting hardware designed for the IXFP5N50P3 are directly compatible with the IXFP12N50P.