IXFP4N85XM N-Channel 850V 3.5A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFP4N85XM is an N-Channel MOSFET manufactured by IXYS, designed for high-voltage switching applications. This device operates at 850V drain-to-source voltage with a continuous drain current rating of 3.5A at 25°C and maximum power dissipation of 35W. The part is housed in a TO-220-3 through-hole package and is part of the HiPerFET™ series. The IXFP4N85XM maintains Active product status with full RoHS3 compliance and unlimited moisture sensitivity rating (MSL 1).

Equivalent and substitute parts are identified to provide design flexibility when the primary part is unavailable, when inventory constraints exist, or when application requirements permit operation within the electrical and mechanical parameters of alternative devices.

Substiute Parts

IXFP4N85XM

IXYSIn Stock: 850IXFP4N85XM Datasheet

Current PartRFQ

TK7A90E,S4X

Toshiba Semiconductor and StorageIn Stock: 3455TK7A90E,S4X Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IXFP4N85XM are identified based on strict electrical and mechanical compatibility criteria. The following parameters define the substitution logic:

Primary Substitution Criteria:

• FET Type: N-Channel (required match)
• Technology: MOSFET (Metal Oxide) (required match)
• Mounting Type: Through Hole (required match)
• Package Family: TO-220 series (required match)
• Drain-to-Source Voltage (Vdss): Equal to or greater than 850V
• Continuous Drain Current (Id): Equal to or greater than 3.5A
• Drive Voltage: 10V (standard gate drive voltage)
• Maximum Gate Voltage (Vgs): ±30V (required match)
• Operating Temperature Range: Minimum -55°C to maximum 150°C or better
• RoHS3 Compliance: Required
• Moisture Sensitivity Level: MSL 1 (Unlimited)

Secondary Compatibility Parameters:

• Rds On (Max): Lower or equal values indicate improved performance
• Gate Charge (Qg): Lower values reduce switching losses
• Input Capacitance (Ciss): Lower values reduce gate drive requirements
• Power Dissipation (Max): Equal to or greater than 35W

Substitute parts must satisfy all primary criteria and maintain compatibility with existing circuit designs without requiring modifications to gate drive circuitry or thermal management systems.

Parameter Comparison

Engineering Selection Recommendations

The TK7A90E,S4X from Toshiba Semiconductor and Storage qualifies as a direct substitute for the IXFP4N85XM based on the following engineering criteria:

Electrical Compatibility: Both devices are N-Channel MOSFETs with identical gate voltage specifications (±30V maximum) and matching 10V drive voltage requirements. The TK7A90E,S4X exceeds the minimum electrical requirements with a higher Vdss rating (900V versus 850V) and double the continuous drain current capability (7A versus 3.5A). Both devices operate within the same temperature range envelope, with the TK7A90E,S4X supporting the full -55°C to 150°C specification.

Mechanical Compatibility: Both parts utilize identical TO-220-3 through-hole packaging, enabling direct socket compatibility without PCB modifications or mechanical redesign.

Regulatory and Compliance Status: Both the IXFP4N85XM and TK7A90E,S4X maintain Active product status with full RoHS3 compliance and MSL 1 (Unlimited) moisture sensitivity ratings. Both devices carry EAR99 export classification and are REACH Unaffected.

Performance Considerations: The TK7A90E,S4X demonstrates improved on-resistance characteristics (2Ohm at 3.5A versus 2.5Ohm at 2A) and higher power dissipation capability (45W versus 35W). These characteristics provide enhanced thermal margin and reduced conduction losses in switching applications. The substitute part exhibits higher gate charge (32nC versus 7nC) and input capacitance (1350pF versus 247pF), which may require evaluation in gate drive circuits operating at high switching frequencies.

Frequently Asked Questions (FAQ)

Q: Can the TK7A90E,S4X be used as a direct replacement for the IXFP4N85XM without circuit modifications?

A: Yes. Both devices share identical gate voltage specifications (±30V), matching 10V drive voltage requirements, and identical TO-220-3 through-hole packaging. No PCB modifications or mechanical redesign is required for direct substitution. However, gate drive circuits operating at switching frequencies above 100 kHz should be evaluated for the higher gate charge and input capacitance of the TK7A90E,S4X.

Q: What are the key electrical differences between these two devices?

A: The TK7A90E,S4X provides higher voltage rating (900V versus 850V), higher continuous drain current (7A versus 3.5A), and higher power dissipation capability (45W versus 35W). The IXFP4N85XM exhibits lower gate charge (7nC versus 32nC) and lower input capacitance (247pF versus 1350pF), which may be advantageous in high-frequency switching applications.

Q: Are both devices RoHS3 compliant?

A: Yes. Both the IXFP4N85XM and TK7A90E,S4X are RoHS3 compliant with MSL 1 (Unlimited) moisture sensitivity ratings, meeting current regulatory requirements for electronic component manufacturing and assembly.

Q: What is the impact of higher gate charge on circuit performance?

A: Gate charge directly affects switching speed and gate drive power requirements. The TK7A90E,S4X requires approximately 4.6 times more gate charge (32nC versus 7nC) to achieve full on-state conduction. Gate drive circuits must supply sufficient current to charge the gate within the required switching time window. Applications with slower gate drive circuits or lower switching frequency requirements are unaffected by this difference.

Q: Can these devices be used interchangeably in high-frequency switching applications?

A: Interchangeability in high-frequency applications depends on gate drive circuit design. The IXFP4N85XM, with lower gate charge and input capacitance, requires less gate drive power and enables faster switching transitions. The TK7A90E,S4X may require gate drive circuit evaluation at switching frequencies above 100 kHz to ensure adequate gate current availability and acceptable switching losses.

Q: Are there any thermal management differences between these devices?

A: The TK7A90E,S4X provides higher power dissipation capability (45W versus 35W) and improved on-resistance characteristics, resulting in lower conduction losses at rated current. Both devices utilize identical TO-220-3 packaging with equivalent thermal interface requirements. Applications operating near the 35W thermal limit of the IXFP4N85XM benefit from the increased thermal margin of the TK7A90E,S4X.

Q: What is the operating temperature range for both devices?

A: The IXFP4N85XM operates from -55°C to 150°C. The TK7A90E,S4X specification indicates a maximum junction temperature of 150°C. Both devices support the full industrial temperature range required for most applications.