IXFP4N60P3 N-Channel MOSFET 600V 4A Equivalent & Substitute Parts

Part Overview

The IXFP4N60P3 is an N-Channel MOSFET rated for 600V drain-to-source voltage with 4A continuous drain current at 25°C. This device is manufactured by IXYS and packaged in a TO-220-3 through-hole configuration. The part operates across a temperature range of -55°C to 150°C and is compliant with RoHS3 and REACH regulations.

The IXFP4N60P3 is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this component.

Substiute Parts

IXFP4N60P3

IXYSIn Stock: 791IXFP4N60P3 Datasheet

Current PartRFQ

IXFP10N60P

IXYSIn Stock: 1980IXFP10N60P Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFP4N60P3 is determined by electrical and mechanical compatibility across the following critical parameters:

Voltage Rating Compatibility: The substitute part must maintain the 600V drain-to-source voltage (Vdss) rating to ensure safe operation within the same voltage domain.

Package and Mounting Compatibility: The substitute part must use the TO-220-3 through-hole package to maintain mechanical and thermal interface compatibility with existing PCB designs and heat sink assemblies.

Gate Drive Compatibility: The substitute part must operate with the same 10V drive voltage specification to ensure compatibility with existing gate driver circuits.

Temperature Range Compatibility: The substitute part must support the -55°C to 150°C operating temperature range to maintain thermal performance across the same environmental conditions.

Regulatory Compliance: The substitute part must maintain RoHS3 and REACH compliance status to satisfy supply chain and regulatory requirements.

The IXFP10N60P meets all substitution criteria. While this part features higher continuous drain current (10A versus 4A) and increased power dissipation capability (200W versus 114W), these represent performance enhancements that do not compromise compatibility. The higher current rating and power handling capacity provide additional design margin without introducing electrical or mechanical incompatibilities.

Parameter Comparison

Engineering Selection Recommendations

IXFP10N60P as Primary Substitute

The IXFP10N60P is the manufacturer-recommended substitute for the obsolete IXFP4N60P3. Both devices share identical voltage ratings (600V Vdss), gate drive specifications (10V), operating temperature ranges (-55°C to 150°C), and package configurations (TO-220-3 through-hole). Both parts maintain RoHS3 compliance and REACH unaffected status.

The IXFP10N60P is classified as an active product with current manufacturing availability (1896 pcs in stock), ensuring long-term supply chain continuity. The IXFP4N60P3 is obsolete with limited remaining inventory (744 pcs).

The IXFP10N60P provides enhanced electrical performance through higher continuous drain current (10A versus 4A) and increased power dissipation capability (200W versus 114W). These performance improvements are compatible with existing circuit designs and do not introduce electrical or mechanical incompatibilities. The substitute part operates within the same voltage and temperature domains and maintains identical gate drive voltage specifications.

Frequently Asked Questions (FAQ)

Q: Can the IXFP10N60P directly replace the IXFP4N60P3 in existing designs?

A: Yes. Both devices share identical drain-to-source voltage ratings (600V), gate drive voltage specifications (10V), operating temperature ranges (-55°C to 150°C), and TO-220-3 through-hole package configurations. The IXFP10N60P provides higher current and power handling capability, which represents a performance enhancement without introducing incompatibilities.

Q: What are the key differences between these two parts?

A: The primary differences are continuous drain current (4A versus 10A), power dissipation capability (114W versus 200W), on-state resistance (2.2 Ohm @ 2A, 10V versus 0.74 Ohm @ 5A, 10V), gate charge (6.9 nC versus 32 nC), and input capacitance (365 pF versus 1610 pF). The IXFP10N60P is an active product; the IXFP4N60P3 is obsolete.

Q: Are there any thermal considerations when substituting these parts?

A: Both parts operate across the same temperature range (-55°C to 150°C). The IXFP10N60P has higher power dissipation capability (200W versus 114W), which may reduce thermal stress in applications operating near the original part's power limits. Existing thermal management solutions (heat sinks, PCB copper area) designed for the IXFP4N60P3 remain compatible with the IXFP10N60P.

Q: Do gate driver circuits require modification when switching to the IXFP10N60P?

A: No modification is required. Both parts operate with 10V drive voltage specifications and ±30V maximum gate voltage ratings. Gate driver circuits designed for the IXFP4N60P3 are compatible with the IXFP10N60P. The higher gate charge (32 nC versus 6.9 nC) in the IXFP10N60P may result in slightly longer switching times, but this remains within the operational envelope of standard gate driver designs.

Q: Are both parts compliant with current regulatory standards?

A: Yes. Both the IXFP4N60P3 and IXFP10N60P are RoHS3 compliant and REACH unaffected, meeting current regulatory requirements for electronic component manufacturing and supply.

Q: What is the packaging difference between these parts?

A: Both parts use identical TO-220-3 through-hole packages. The IXFP4N60P3 is supplied in standard packaging; the IXFP10N60P is supplied in tube packaging. Both are compatible with standard PCB assembly processes and existing mechanical interfaces.