IXFP4N100Q Equivalent & Substitute Parts

Part Overview

The IXFP4N100Q is an N-Channel 1000 V, 4A continuous drain current MOSFET manufactured by IXYS in the HiPerFET™ Q Class series. This device is packaged in TO-220-3 through-hole configuration with a maximum power dissipation of 150W at case temperature. The part is marked as not for new designs, indicating obsolescence or end-of-life status. Identifying equivalent and substitute parts is necessary for design continuity, inventory management, and system reliability when the primary part becomes unavailable.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	1000	V
Continuous Drain Current (Id) @ 25°C	4	A
On-State Resistance (Rds On) @ 2A, 10V	3	Ω
Gate Threshold Voltage (Vgs(th)) @ 1.5mA	5	V
Gate Charge (Qg) @ 10V	39	nC
Input Capacitance (Ciss) @ 25V	1050	pF
Power Dissipation (Max)	150	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the IXFP4N100Q is determined by the following critical parameters:

Voltage Rating: All substitute parts must maintain the 1000 V Vdss specification to ensure safe operation in the intended application circuit.

Current Rating: Substitute parts with equal or higher continuous drain current (4A or greater) are acceptable, as they provide equivalent or improved current handling capability.

On-State Resistance: Rds On values within acceptable tolerance ensure comparable conduction losses and thermal performance. Parts with lower Rds On values provide improved efficiency.

Package Compatibility: TO-220-3 through-hole packaging is the primary form factor. Equivalent parts in alternative through-hole packages (TO-247-3) are listed separately as parametric equivalents due to different mechanical footprints.

Thermal and Electrical Characteristics: Operating temperature range, gate charge, and input capacitance must be compatible with the application's switching frequency and thermal management requirements.

Compliance Status: RoHS3 compliance and active product status indicate current manufacturing availability and regulatory alignment.

Parameter Comparison

Parameter	IXFP4N100Q	IXFP5N100P	IXFH4N100Q	IRFBF30	STP5NK100Z
Manufacturer	IXYS	IXYS	IXYS	Vishay Siliconix	STMicroelectronics
Vdss (V)	1000	1000	1000	900	1000
Id @ 25°C (A)	4	5	4	3.6	3.5
Rds On @ 10V (Ω)	3 @ 2A	2.8 @ 500mA	3 @ 2A	3.7 @ 2.2A	3.7 @ 1.75A
Vgs(th) (V)	5 @ 1.5mA	6 @ 250µA	5 @ 1.5mA	4 @ 250µA	4.5 @ 100µA
Qg @ 10V (nC)	39	33.4	39	78	59
Ciss @ 25V (pF)	1050	1830	1050	1200	1154
Power Dissipation (W)	150	250	150	125	125
Package	TO-220-3	TO-220-3	TO-247-3	TO-220-3	TO-220-3
Product Status	Not For New Designs	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	Non-compliant	ROHS3 Compliant

Engineering Selection Recommendations

IXFP5N100P (IXYS): This part is the primary direct substitute for the IXFP4N100Q. Both devices share identical voltage ratings (1000 V Vdss), same package type (TO-220-3), and compatible operating temperature ranges. The IXFP5N100P provides higher continuous drain current (5A versus 4A) and increased power dissipation capability (250W versus 150W), making it suitable for applications requiring equal or greater current handling. The part is currently active and RoHS3 compliant, ensuring long-term availability and regulatory compliance.

IXFH4N100Q (IXYS): This part is a parametric equivalent offering identical electrical characteristics (1000 V, 4A, 150W, 3Ω Rds On) but in a different through-hole package (TO-247-3 versus TO-220-3). Selection of this part requires PCB redesign to accommodate the larger TO-247-3 footprint. The part is currently active and RoHS3 compliant. Use this option only when mechanical constraints or thermal management requirements justify the package change.

STP5NK100Z (STMicroelectronics): This part maintains the 1000 V voltage rating and TO-220-3 package compatibility. Continuous drain current is 3.5A, which is slightly lower than the IXFP4N100Q (4A). Power dissipation is 125W, below the original 150W specification. This part is suitable for applications where the 3.5A current rating is sufficient. The device is currently active and RoHS3 compliant.

IRFBF30 (Vishay Siliconix): This part has a reduced voltage rating (900 V Vdss versus 1000 V) and lower continuous drain current (3.6A versus 4A). It is not recommended as a direct substitute due to the voltage derating. Additionally, this part is RoHS non-compliant, which may conflict with regulatory requirements in new designs or procurement policies. Use only in legacy systems where RoHS compliance is not required and the 900 V rating is acceptable.

Frequently Asked Questions (FAQ)

Q: Can the IXFP5N100P directly replace the IXFP4N100Q without PCB modifications?

A: Yes. Both parts use the TO-220-3 package with identical pin configurations and mechanical footprints. No PCB layout changes are required. The IXFP5N100P provides higher current and power ratings, making it a direct upgrade.

Q: What is the difference between the IXFP4N100Q and IXFH4N100Q?

A: The electrical specifications are identical (1000 V, 4A, 150W, 3Ω Rds On). The primary difference is the package: IXFP4N100Q uses TO-220-3, while IXFH4N100Q uses TO-247-3. The TO-247-3 package is larger and typically offers improved thermal performance due to increased copper area. PCB redesign is required to use the IXFH4N100Q.

Q: Why is the IRFBF30 listed as a substitute if it has lower voltage and current ratings?

A: The IRFBF30 is included for reference in applications where the 900 V voltage rating is acceptable and current requirements do not exceed 3.6A. However, it is not recommended as a primary substitute due to voltage derating and RoHS non-compliance. Use only in legacy systems.

Q: Does the STP5NK100Z provide equivalent performance to the IXFP4N100Q?

A: The STP5NK100Z maintains the 1000 V voltage rating and TO-220-3 package. However, continuous drain current is 3.5A (versus 4A) and power dissipation is 125W (versus 150W). It is suitable for applications where these lower ratings are acceptable. Gate charge is higher (59 nC versus 39 nC), which may affect switching frequency performance.

Q: Are all substitute parts RoHS3 compliant?

A: No. The IRFBF30 is RoHS non-compliant. All other substitutes (IXFP5N100P, IXFH4N100Q, STP5NK100Z) are RoHS3 compliant. Verify compliance requirements for your application before part selection.

Q: What is the impact of higher gate charge on switching performance?

A: Higher gate charge (Qg) increases the time required to switch the transistor on and off, which can reduce maximum switching frequency and increase switching losses. The IXFP4N100Q has 39 nC gate charge. The STP5NK100Z has 59 nC, and the IRFBF30 has 78 nC. For high-frequency applications, lower gate charge is preferable.

Q: Can I use the IXFP5N100P in a circuit designed for the IXFP4N100Q?

A: Yes. The IXFP5N100P is a direct substitute with higher current and power ratings. It will operate safely in any circuit designed for the IXFP4N100Q. No circuit modifications are required.

Q: What does "Not For New Designs" mean for the IXFP4N100Q?

A: This status indicates the part is obsolete or end-of-life. IXYS no longer recommends this part for new product designs. Existing inventory may be available, but long-term supply is not guaranteed. Use an active substitute part for new designs.

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