IXFP3N80 Equivalent & Substitute Parts

Part Overview

The IXFP3N80 is an N-Channel MOSFET rated for 800V drain-to-source voltage with 3.6A continuous drain current at 25°C, housed in a TO-220-3 through-hole package. This device is part of the HiPerFET™ series from IXYS and is classified as obsolete. Due to its obsolete status and limited availability for new production cycles, equivalent substitute parts from active product lines are necessary to maintain design continuity and ensure long-term supply chain reliability.

Substiute Parts

IXFP3N80
IXYSIn Stock: 986IXFP3N80 Datasheet
IXFP3N80
Current Part
STP3N80K5
STMicroelectronicsIn Stock: 2376STP3N80K5 Datasheet
STP3N80K5
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STP3NK80Z
STMicroelectronicsIn Stock: 3032STP3NK80Z Datasheet
STP3NK80Z
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STP4NK80Z
STMicroelectronicsIn Stock: 6377STP4NK80Z Datasheet
STP4NK80Z
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Key Parameters

Parameter Value Unit
FET Type N-Channel
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 3.6 A (Tc)
Rds On (Max) @ Id, Vgs 3.6 Ohm @ 500mA, 10V
Power Dissipation (Max) 100 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Package / Case TO-220-3
Mounting Type Through Hole

Substitute Part Grouping Explanation

Substitution of the IXFP3N80 is determined by the following critical parameters:

  1. Drain-to-Source Voltage (Vdss): All substitute parts must maintain 800V rating to ensure equivalent voltage withstand capability.
  2. Continuous Drain Current (Id): Substitute parts must support the application's current requirements. The IXFP3N80 operates at 3.6A; substitutes with lower ratings (2.5A) represent reduced current capacity and require application-level verification.
  3. On-State Resistance (Rds On): Lower Rds On values indicate improved efficiency and reduced power dissipation; higher values increase thermal load.
  4. Power Dissipation (Max): Thermal performance varies across substitutes; lower ratings indicate reduced thermal headroom.
  5. Package and Mounting: All substitutes use TO-220-3 through-hole packaging, ensuring mechanical and electrical compatibility.
  6. Operating Temperature Range: All parts share -55°C to 150°C (TJ) range, maintaining thermal specification alignment.

Parameter Comparison

Parameter IXFP3N80 STP3N80K5 STP3NK80Z STP4NK80Z Unit
Manufacturer IXYS STMicroelectronics STMicroelectronics STMicroelectronics
FET Type N-Channel N-Channel N-Channel N-Channel
Vdss 800 800 800 800 V
Id @ 25°C 3.6 2.5 2.5 3.0 A (Tc)
Rds On (Max) @ 10V 3.6 3.5 4.5 3.5 Ohm
Vgs(th) (Max) 4.5 5.0 4.5 4.5 V @ specified Id
Gate Charge (Qg) (Max) @ 10V 24 9.5 19 22.5 nC
Input Capacitance (Ciss) (Max) 685 130 485 575 pF
Power Dissipation (Max) 100 60 70 80 W (Tc)
Operating Temperature -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C (TJ)
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3
Mounting Type Through Hole Through Hole Through Hole Through Hole
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Product Status Obsolete Not For New Designs Active Active

Engineering Selection Recommendations

STP3NK80Z is the primary substitute for the IXFP3N80. This part is classified as Active and is ROHS3 compliant, ensuring long-term availability and regulatory compliance. While the continuous drain current is reduced to 2.5A (compared to 3.6A), the 800V Vdss rating, TO-220-3 package, and -55°C to 150°C operating range provide direct functional equivalence. The Rds On of 4.5Ohm is slightly higher, resulting in marginally increased power dissipation at equivalent current levels. Gate charge and input capacitance characteristics are comparable to the original part.

STP4NK80Z is an alternative substitute offering improved current capacity at 3.0A, closer to the original 3.6A specification. This part is also Active and ROHS3 compliant. The Rds On of 3.5Ohm provides superior on-state performance compared to both the IXFP3N80 and STP3NK80Z. Power dissipation is rated at 80W, which is lower than the original 100W but adequate for most applications operating below maximum thermal limits.

STP3N80K5 is classified as Not For New Designs and should be avoided for new product development. Although it offers the lowest Rds On at 3.5Ohm and comparable gate charge characteristics, its obsolescence status and reduced power dissipation rating (60W) make it unsuitable for long-term supply chain planning.

All substitute parts maintain electrical and mechanical compatibility with the original IXFP3N80 within the specified parameter ranges.

Frequently Asked Questions (FAQ)

Q: Can the STP3NK80Z directly replace the IXFP3N80 in existing designs?

A: Yes, the STP3NK80Z provides direct functional replacement. Both parts share identical 800V Vdss rating, TO-220-3 package, through-hole mounting, and -55°C to 150°C operating temperature range. The primary difference is reduced continuous drain current (2.5A versus 3.6A). Applications operating below 2.5A continuous current experience no functional impact. Applications requiring the full 3.6A rating require thermal and current-path analysis to confirm STP3NK80Z suitability.

Q: What is the difference between STP3NK80Z and STP4NK80Z?

A: Both parts are Active products with identical 800V Vdss and TO-220-3 packaging. STP4NK80Z offers higher continuous drain current (3.0A versus 2.5A) and superior Rds On performance (3.5Ohm versus 4.5Ohm). STP4NK80Z is the preferred choice for applications requiring current capacity closer to the original 3.6A specification. STP3NK80Z is suitable for lower-current applications and provides slightly higher power dissipation margin (70W versus 80W).

Q: Why is the STP3N80K5 not recommended despite its low Rds On?

A: The STP3N80K5 is classified as Not For New Designs, indicating STMicroelectronics has discontinued active support and development for this part. While its Rds On of 3.5Ohm is competitive, the reduced power dissipation rating (60W versus 100W on the original) and obsolescence status create supply chain and thermal design risks. Active product alternatives (STP3NK80Z and STP4NK80Z) provide superior long-term availability and support.

Q: Are all substitute parts RoHS3 compliant?

A: Yes, all substitute parts listed (STP3N80K5, STP3NK80Z, and STP4NK80Z) are ROHS3 compliant, matching the original IXFP3N80 compliance status. All parts are also REACH unaffected and carry EAR99 ECCN classification.

Q: What is the impact of higher Rds On in the STP3NK80Z compared to the IXFP3N80?

A: The STP3NK80Z Rds On of 4.5Ohm (measured at 1.25A, 10V) is 0.9Ohm higher than the IXFP3N80 (3.6Ohm at 500mA, 10V). At equivalent current levels, this results in increased resistive power dissipation. For applications operating at continuous currents below 2.5A, this difference is typically absorbed within the 70W power dissipation rating. Thermal analysis is required for applications approaching maximum power dissipation limits.

Q: Can the IXFP3N80 be used in new designs?

A: No. The IXFP3N80 is classified as Obsolete. New designs must use Active substitute parts (STP3NK80Z or STP4NK80Z) to ensure long-term component availability, manufacturer support, and compliance with current supply chain standards.

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