IXFP3N50PM N-Channel MOSFET 500V 2.7A Equivalent & Substitute Parts

Part Overview

The IXFP3N50PM is an N-Channel MOSFET manufactured by IXYS, rated for 500V drain-to-source voltage with 2.7A continuous drain current at 25°C. This device is packaged in a Through Hole TO-220-3 configuration and is part of the HiPerFET™ and PolarHT™ series. The IXFP3N50PM is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support and component procurement.

Substitute parts are necessary due to the obsolete status of the original component. Equivalent devices must maintain functional compatibility within the electrical and mechanical constraints of the application while offering active product status and continued availability.

Substiute Parts

IXFP3N50PM

IXYSIn Stock: 835IXFP3N50PM Datasheet

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IXFP8N65X2M

IXYSIn Stock: 726IXFP8N65X2M Datasheet

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IRFI3205PBF

Infineon TechnologiesIn Stock: 2715IRFI3205PBF Datasheet

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STU4N52K3

STMicroelectronicsIn Stock: 3324STU4N52K3 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IXFP3N50PM are selected based on strict electrical and mechanical compatibility criteria. The following parameters define acceptable substitution:

Primary Substitution Criteria:

• FET Type: N-Channel (required match)
• Technology: MOSFET (Metal Oxide) (required match)
• Drain to Source Voltage (Vdss): Equal to or greater than 500V
• Continuous Drain Current (Id) @ 25°C: Equal to or greater than 2.7A
• Drive Voltage: 10V (standard gate drive voltage)
• Mounting Type: Through Hole (required match)
• Operating Temperature Range: Minimum -55°C to maximum 150°C or higher
• Gate Voltage (Vgs Max): ±30V or greater

Secondary Compatibility Factors:

• Rds On (Max): Lower or equal values indicate improved performance
• Gate Charge (Qg): Lower values indicate faster switching characteristics
• Input Capacitance (Ciss): Lower values indicate reduced gate drive requirements
• Power Dissipation: Equal to or greater than 36W

Substitute parts must satisfy all primary criteria. Variations in secondary factors are acceptable provided they do not degrade circuit performance or introduce thermal management concerns.

Parameter Comparison

Engineering Selection Recommendations

IXFP8N65X2M (IXYS)

The IXFP8N65X2M is an active product offering superior electrical performance within the same manufacturer ecosystem. It exceeds the IXFP3N50PM in drain-to-source voltage (650V vs. 500V), continuous drain current (8A vs. 2.7A), and power dissipation (150W vs. 36W). The device maintains compatible gate drive voltage (10V), gate threshold voltage range, and operating temperature limits. The TO-220 Isolated Tab package provides enhanced thermal performance. This substitute is suitable for applications requiring higher voltage or current margins. ROHS3 compliance and REACH Unaffected status confirm regulatory alignment.

STU4N52K3 (STMicroelectronics)

The STU4N52K3 provides close electrical equivalence to the IXFP3N50PM with a drain-to-source voltage of 525V and continuous drain current of 2.5A. The device operates within the same temperature range and maintains compatible gate drive characteristics. The I-PAK (TO-251-3) package represents a mechanical variation from the original TO-220-3 configuration and requires PCB layout modification. Rds On performance is slightly higher (2.6 Ohm vs. 2 Ohm), and gate charge remains comparable (11 nC vs. 9.3 nC). ROHS3 compliance and REACH Unaffected status confirm regulatory alignment. This substitute is appropriate for space-constrained applications where the smaller package footprint is advantageous.

IRFI3205PBF (Infineon Technologies)

The IRFI3205PBF is not recommended as a direct substitute for the IXFP3N50PM. The drain-to-source voltage rating of 55V is substantially below the required 500V specification, making this device unsuitable for the intended application. Although the device offers higher continuous drain current (64A) and lower Rds On (8 mOhm), the voltage rating mismatch disqualifies it from substitution consideration. This part is listed in the provided substitute list but does not meet primary substitution criteria.

Frequently Asked Questions (FAQ)

Q: Can the IXFP8N65X2M replace the IXFP3N50PM in all applications?

A: The IXFP8N65X2M meets all primary substitution criteria and exceeds the electrical specifications of the IXFP3N50PM. The higher voltage and current ratings provide design margin. However, the isolated tab variant of the TO-220 package may require verification of thermal interface compatibility with existing heatsink designs. Electrical substitution is valid; mechanical integration requires confirmation.

Q: What is the significance of the package difference between TO-220-3 and TO-251-3 (I-PAK)?

A: The TO-220-3 and TO-251-3 packages differ in physical dimensions, lead configuration, and PCB footprint. The TO-251-3 (I-PAK) is a smaller package suitable for space-constrained designs. Direct mechanical substitution is not possible without PCB redesign. Electrical performance is independent of package type; however, thermal management characteristics may differ due to package geometry variations.

Q: Why is the IRFI3205PBF listed as a substitute if it does not meet voltage requirements?

A: The IRFI3205PBF is included in the provided substitute list but does not satisfy the primary substitution criterion of drain-to-source voltage (55V vs. required 500V). This device is not suitable for applications requiring the IXFP3N50PM specification. The listing reflects historical component cross-reference data and does not constitute a valid engineering substitution.

Q: Are all substitute parts ROHS3 compliant?

A: The IXFP8N65X2M, IRFI3205PBF, and STU4N52K3 are all ROHS3 compliant. The original IXFP3N50PM RoHS status is not specified in the provided data. All substitute parts maintain REACH Unaffected status, confirming regulatory compliance for European market applications.

Q: What is the impact of higher gate charge (Qg) on circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The IXFP3N50PM has a gate charge of 9.3 nC at 10V. The IXFP8N65X2M and STU4N52K3 have slightly higher gate charge values (11 nC), requiring marginally more gate drive energy. The IRFI3205PBF has significantly higher gate charge (170 nC), which would require substantially increased gate drive capability. Higher gate charge increases switching losses and may require gate driver circuit modifications.

Q: Can the STU4N52K3 be used as a direct pin-for-pin replacement?

A: The STU4N52K3 uses the TO-251-3 (I-PAK) package, which has a different pin configuration and footprint than the TO-220-3 package of the IXFP3N50PM. Pin-for-pin replacement is not possible. PCB redesign is required to accommodate the different package geometry. Electrical functionality is compatible; mechanical integration requires layout modification.

Q: What are the thermal management implications of selecting a substitute part?

A: The IXFP8N65X2M offers higher power dissipation capability (150W vs. 36W) and includes an isolated tab variant, which may improve thermal interface performance. The STU4N52K3 in I-PAK package has different thermal characteristics than the TO-220-3 package. The IRFI3205PBF is not thermally suitable due to voltage rating mismatch. Thermal management requirements depend on application duty cycle and heatsink design; substitute selection should account for thermal interface compatibility.