IXFP36N30P3 Equivalent & Substitute Parts

Part Overview

The IXFP36N30P3 is an N-Channel MOSFET manufactured by IXYS, rated for 300V drain-to-source voltage with 36A continuous drain current at 25°C. This device is part of the HiPerFET™ and Polar3™ series and is housed in a TO-220-3 through-hole package. The part is currently in Active product status with 1004 units in stock.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter tolerances, accounting for differences in voltage rating, current capacity, and thermal characteristics. The IPP17N25S3100AKSA1 is listed as a functional alternative, though with reduced voltage and current ratings suitable for lower-power applications.

Substiute Parts

IXFP36N30P3
IXYSIn Stock: 1078IXFP36N30P3 Datasheet
IXFP36N30P3
Current Part
IPP17N25S3100AKSA1
Infineon TechnologiesIn Stock: 1982IPP17N25S3100AKSA1 Datasheet
IPP17N25S3100AKSA1
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Key Parameters

Parameter Value Unit
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 V
Continuous Drain Current (Id) @ 25°C 36 A (Tc)
Rds On (Max) @ Id, Vgs 110 mOhm @ 18A, 10V
Gate Threshold Voltage (Vgs(th)) (Max) 4.5 V @ 250µA
Gate Charge (Qg) (Max) 30 nC @ 10V
Power Dissipation (Max) 347 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Package / Case TO-220-3
Mounting Type Through Hole
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution eligibility for N-Channel MOSFETs is determined by the following criteria:

Mandatory Compatibility Parameters:

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Package / Case: TO-220-3
  • Mounting Type: Through Hole

Performance Parameters (Must Meet or Exceed Application Requirements):

  • Drain to Source Voltage (Vdss): Substitute must support the circuit voltage requirement
  • Continuous Drain Current (Id) @ 25°C: Substitute must handle the required current load
  • Rds On (Max): Lower or equal on-state resistance preferred for thermal efficiency
  • Gate Threshold Voltage (Vgs(th)): Must be compatible with gate drive circuitry
  • Power Dissipation (Max): Must accommodate thermal design constraints
  • Operating Temperature Range: Must cover the application temperature envelope

The IPP17N25S3100AKSA1 qualifies as a substitute for applications requiring reduced voltage (250V vs. 300V) and current (17A vs. 36A) specifications. This part maintains N-Channel MOSFET topology, TO-220-3 packaging, and through-hole mounting compatibility.

Parameter Comparison

Parameter IXFP36N30P3 IPP17N25S3100AKSA1 Unit
Manufacturer IXYS Infineon Technologies
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 250 V
Continuous Drain Current (Id) @ 25°C 36 17 A (Tc)
Rds On (Max) @ Id, Vgs 110 @ 18A, 10V 100 @ 17A, 10V mOhm
Gate Threshold Voltage (Vgs(th)) (Max) 4.5 @ 250µA 4.0 @ 54µA V
Gate Charge (Qg) (Max) 30 @ 10V 19 @ 10V nC
Power Dissipation (Max) 347 107 W (Tc)
Operating Temperature Range -55 to 150 -55 to 175 °C (TJ)
Package / Case TO-220-3 TO-220-3
Mounting Type Through Hole Through Hole
RoHS Status ROHS3 Compliant ROHS3 Compliant
Product Status Active Last Time Buy

Engineering Selection Recommendations

IXFP36N30P3 (Primary Selection)

The IXFP36N30P3 is the recommended choice for new designs and applications requiring the full specified performance envelope. This part maintains Active product status, ensuring long-term availability and supply chain stability. The device is ROHS3 compliant and REACH unaffected, meeting current regulatory requirements. With 1004 units in stock, procurement lead times are minimal.

IPP17N25S3100AKSA1 (Substitute for Reduced-Specification Applications)

The IPP17N25S3100AKSA1 is suitable only for applications where the circuit voltage does not exceed 250V and the continuous drain current requirement does not exceed 17A. This Infineon Technologies part carries Last Time Buy status, indicating limited future availability. Selection of this substitute should account for extended procurement timelines and potential supply constraints. The part is ROHS3 compliant and REACH unaffected.

Compliance and Regulatory Status

Both parts are ROHS3 compliant and REACH unaffected, meeting environmental and regulatory standards for electronic component manufacturing and distribution. Both are classified under ECCN EAR99 and HTSUS 8541.29.0095.

Frequently Asked Questions (FAQ)

Q: Can the IPP17N25S3100AKSA1 be used as a direct replacement for the IXFP36N30P3?

A: No. The IPP17N25S3100AKSA1 has lower voltage (250V vs. 300V) and current (17A vs. 36A) ratings. Direct substitution is only valid if the application circuit operates within these reduced specifications.

Q: What is the primary difference between these two MOSFETs?

A: The IXFP36N30P3 is rated for higher voltage (300V) and higher current (36A) with greater power dissipation capability (347W). The IPP17N25S3100AKSA1 is designed for lower-voltage, lower-current applications (250V, 17A, 107W).

Q: Are both parts available in the same package?

A: Yes. Both the IXFP36N30P3 and IPP17N25S3100AKSA1 use the TO-220-3 through-hole package, ensuring mechanical and pin compatibility.

Q: What is the significance of the "Last Time Buy" status for the IPP17N25S3100AKSA1?

A: Last Time Buy status indicates that the manufacturer has announced end-of-life for this product. Future availability is limited, and procurement should be planned accordingly. The IXFP36N30P3, with Active status, has no announced end-of-life date.

Q: Are there any gate drive differences between these parts?

A: Both parts have compatible gate threshold voltages (4.5V and 4.0V respectively) and operate with ±20V maximum gate voltage. Gate charge differs (30 nC vs. 19 nC), which may affect gate drive circuit design but does not prevent substitution in applications within the IPP17N25S3100AKSA1 electrical specifications.

Q: Do both parts meet RoHS and REACH requirements?

A: Yes. Both the IXFP36N30P3 and IPP17N25S3100AKSA1 are ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory standards.

Q: What thermal considerations apply to substitution?

A: The IXFP36N30P3 has a maximum power dissipation of 347W, while the IPP17N25S3100AKSA1 is rated for 107W. Applications requiring high power dissipation must use the IXFP36N30P3. The IPP17N25S3100AKSA1 is suitable only for lower-power applications.

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