IXFP34N65X2 N-Channel 650V 34A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFP34N65X2 is an N-Channel 650V 34A MOSFET manufactured by IXYS in the HiPerFET™ Ultra X2 series. This device is rated for 540W power dissipation and operates across a temperature range of -55°C to 150°C. The part is housed in a TO-220-3 through-hole package and maintains Active product status with full RoHS3 compliance.

Equivalent and substitute parts are identified when design requirements necessitate alternative packaging configurations, different thermal performance characteristics, or sourcing from alternative manufacturers while maintaining functional compatibility within specified electrical parameters.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	650	V
Continuous Drain Current (Id) @ 25°C	34	A
Rds On (Max) @ 17A, 10V	105	mOhm
Gate Threshold Voltage (Vgs(th)) @ 2.5mA	5.5	V
Gate Charge (Qg) @ 10V	56	nC
Power Dissipation (Max)	540	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution logic for the IXFP34N65X2 is based on the following criteria:

Parametric Equivalents maintain identical electrical specifications across all critical parameters: Vdss (650V), Id (34A), Rds On (105mOhm @ 17A, 10V), Vgs(th) (5.5V @ 2.5mA), and Gate Charge (56nC @ 10V). These parts differ only in package configuration or manufacturer designation while preserving functional interchangeability.

Similar Substitutes share the same voltage class (600V–650V) and comparable current ratings (19A–31A) with acceptable variations in Rds On, Gate Charge, and Power Dissipation. These parts are suitable for applications where the exact electrical specifications of the primary device are not mandatory, provided the application requirements fall within the substitute's rated parameters.

Key Parameters for Substitution Assessment:

Drain to Source Voltage (Vdss): 600V minimum
Continuous Drain Current (Id): 19A minimum
On-State Resistance (Rds On): 99–139mOhm range
Gate Charge (Qg): 34–64nC range
Power Dissipation: 92W minimum
Operating Temperature: -55°C to 150°C
Package Type: TO-220-3 or TO-247-3 through-hole configurations

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Power Diss. (W)	Package	Series
IXFP34N65X2	IXYS	650	34	105 @ 17A	56 @ 10V	540	TO-220-3	HiPerFET™ Ultra X2
IXFH34N65X2	IXYS	650	34	105 @ 17A	56 @ 10V	540	TO-247-3	HiPerFET™ Ultra X2
STP30N65M5	STMicroelectronics	650	22	139 @ 11A	64 @ 10V	140	TO-220-3	MDmesh™ V
STP36N60M6	STMicroelectronics	600	30	99 @ 15A	44.3 @ 10V	208	TO-220-3	MDmesh™ M6
TK25E60X,S1X	Toshiba Semiconductor	600	25	125 @ 7.5A	40 @ 10V	180	TO-220-3	DTMOSIV-H
IPP60R099P7XKSA1	Infineon Technologies	600	31	99 @ 10.5A	45 @ 10V	117	TO-220-3	CoolMOS™ P7
IPP60R120C7XKSA1	Infineon Technologies	600	19	120 @ 7.8A	34 @ 10V	92	TO-220-3	CoolMOS™ C7

Engineering Selection Recommendations

Parametric Equivalent Selection:

The IXFH34N65X2 is a direct parametric equivalent to the IXFP34N65X2, differing only in package configuration (TO-247-3 versus TO-220-3). Both devices maintain identical electrical specifications and are manufactured by IXYS within the same HiPerFET™ Ultra X2 series. Selection between these two parts is determined by PCB layout requirements and thermal management strategy. Both parts carry Active product status and full RoHS3 compliance.

Similar Substitute Selection:

Similar substitutes from STMicroelectronics (STP30N65M5, STP36N60M6), Toshiba Semiconductor (TK25E60X,S1X), and Infineon Technologies (IPP60R099P7XKSA1, IPP60R120C7XKSA1) are suitable for applications where the IXFP34N65X2 specifications exceed design requirements or where alternative sourcing is necessary. All substitute parts maintain Active product status and RoHS3 compliance.

The STP36N60M6 and IPP60R099P7XKSA1 provide the closest current-handling capability (30A and 31A respectively) to the primary device while operating at 600V. The STP30N65M5 maintains the 650V voltage rating with reduced current capacity (22A).

Selection of any substitute part requires verification that the application's maximum drain current requirement does not exceed the substitute device's rated continuous drain current, and that thermal dissipation requirements align with the substitute's power rating.

Frequently Asked Questions (FAQ)

Q: Can the IXFH34N65X2 be used as a direct replacement for the IXFP34N65X2?

A: Yes. The IXFH34N65X2 is a parametric equivalent with identical electrical specifications. The only difference is the package type: IXFH34N65X2 uses TO-247-3 while IXFP34N65X2 uses TO-220-3. Substitution is valid provided the PCB layout accommodates the TO-247-3 package footprint.

Q: What is the primary limitation when substituting the STP30N65M5 for the IXFP34N65X2?

A: The STP30N65M5 has a reduced continuous drain current rating of 22A compared to the IXFP34N65X2's 34A. This substitute is suitable only for applications where the maximum drain current does not exceed 22A. The 650V voltage rating and similar gate charge characteristics make it compatible for lower-current applications.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed in this reference maintain RoHS3 compliance and carry Active product status, consistent with the primary IXFP34N65X2 device.

Q: How does the 600V rating of some substitutes affect compatibility with the 650V IXFP34N65X2?

A: Substitutes rated at 600V (STP36N60M6, TK25E60X,S1X, IPP60R099P7XKSA1, IPP60R120C7XKSA1) are suitable only for applications where the maximum drain-to-source voltage does not exceed 600V. These parts cannot be used in circuits designed for the full 650V capability of the primary device.

Q: What is the significance of gate charge (Qg) differences among substitute parts?

A: Gate charge affects switching speed and driver circuit requirements. The IXFP34N65X2 has a gate charge of 56nC. Substitutes with lower gate charge (34–45nC) enable faster switching, while those with higher gate charge (64nC) require longer switching times. Driver circuit compatibility should be verified based on the substitute's gate charge specification.

Q: Can the IPP60R120C7XKSA1 be used in high-current applications?

A: No. The IPP60R120C7XKSA1 is rated for only 19A continuous drain current, significantly below the IXFP34N65X2's 34A rating. This part is suitable only for applications requiring 19A or less.

Q: What thermal considerations apply when selecting a substitute?

A: Power dissipation ratings vary significantly among substitutes (92W to 540W). The IXFP34N65X2 is rated for 540W, while some substitutes are rated substantially lower. Thermal management design must account for the substitute's power dissipation rating to prevent junction temperature excursion beyond the -55°C to 150°C operating range.

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