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IXFP30N60X N-Channel MOSFET Equivalent & Substitute Parts
Part Overview
The IXFP30N60X is an N-Channel MOSFET manufactured by IXYS, rated for 600V drain-to-source voltage with 30A continuous drain current at 25°C. This device is part of the HiPerFET™ Ultra X series and is housed in a TO-220-3 package for through-hole mounting applications. The part is classified as obsolete, indicating it has been discontinued by the manufacturer. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this component.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (Vdss) | 600 | V |
| Continuous Drain Current (Id) @ 25°C | 30 | A |
| On-State Resistance (Rds On) @ 15A, 10V | 155 | mOhm |
| Gate Threshold Voltage (Vgs(th)) @ 4mA | 4.5 | V |
| Gate Charge (Qg) @ 10V | 56 | nC |
| Input Capacitance (Ciss) @ 25V | 2270 | pF |
| Power Dissipation (Max) | 500 | W |
| Operating Temperature Range | -55 to 150 | °C |
| Package Type | TO-220-3 | — |
| Mounting Type | Through Hole | — |
| RoHS Status | ROHS3 Compliant | — |
Substitute Part Grouping Explanation
Substitution of the IXFP30N60X is determined by electrical and mechanical compatibility within the following criteria:
Primary Substitution Criteria:
- Drain-to-Source Voltage (Vdss): Equal to or greater than 600V
- Continuous Drain Current (Id): Equal to or greater than 30A at 25°C
- On-State Resistance (Rds On): Equal to or lower than 155mOhm at specified gate voltage
- Gate Threshold Voltage (Vgs(th)): Within ±30V maximum gate voltage specification
- Operating Temperature Range: Minimum -55°C to maximum 150°C
- Package/Mounting: TO-220-3 through-hole configuration preferred for direct mechanical compatibility
Substitution Categories:
Manufacturer Recommended Substitute: IXFP34N65X2 exceeds the electrical specifications of the IXFP30N60X with higher voltage rating (650V), increased current capability (34A), and improved on-state resistance (105mOhm). This part is from the same manufacturer and series family, ensuring design consistency and is currently in active production status.
Parametric Equivalent: IXFH30N60X maintains identical electrical specifications to the IXFP30N60X but differs in package configuration (TO-247-3 instead of TO-220-3). This part is suitable for applications where the larger TO-247 footprint is acceptable and provides mechanical compatibility through alternative mounting.
Similar Alternatives: FCP20N60, SIHP22N60AE-GE3, SPP20N65C3XKSA1, STP28N60DM2, and STP28N65M2 provide functional equivalence with trade-offs in current rating, voltage rating, or on-state resistance. These parts maintain the 600V voltage class and TO-220-3 package but operate at reduced current levels (18A to 21A) or with different resistance characteristics.
Parameter Comparison
| Parameter | IXFP30N60X (Main) | IXFP34N65X2 (Recommended) | IXFH30N60X (Parametric Equiv.) | FCP20N60 | SIHP22N60AE-GE3 | SPP20N65C3XKSA1 | STP28N60DM2 | STP28N65M2 | TSM60NB190CZ C0G |
|---|---|---|---|---|---|---|---|---|---|
| Vdss (V) | 600 | 650 | 600 | 600 | 600 | 650 | 600 | 650 | 600 |
| Id @ 25°C (A) | 30 | 34 | 30 | 20 | 20 | 20.7 | 21 | 20 | 18 |
| Rds On (mOhm) | 155 @ 15A | 105 @ 17A | 155 @ 15A | 190 @ 10A | 180 @ 11A | 190 @ 13.1A | 160 @ 10.5A | 180 @ 10A | 190 @ 6A |
| Vgs(th) (V) | 4.5 @ 4mA | 5.5 @ 2.5mA | 4.5 @ 4mA | 5 @ 250µA | 4 @ 250µA | 3.9 @ 1mA | 5 @ 250µA | 4 @ 250µA | 4 @ 250µA |
| Qg (nC) | 56 @ 10V | 56 @ 10V | 56 @ 10V | 98 @ 10V | 96 @ 10V | 114 @ 10V | 34 @ 10V | 35 @ 10V | 31 @ 10V |
| Ciss (pF) | 2270 @ 25V | 3330 @ 25V | 2270 @ 25V | 3080 @ 25V | 1451 @ 100V | 2400 @ 25V | 1500 @ 100V | 1440 @ 100V | 1273 @ 100V |
| Power Dissipation (W) | 500 | 540 | 500 | 208 | 179 | 208 | 170 | 170 | 33.8 |
| Package | TO-220-3 | TO-220-3 | TO-247-3 | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Product Status | Obsolete | Active | Obsolete | Not For New Designs | Active | Not For New Designs | Active | Active | Obsolete |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
Engineering Selection Recommendations
For Direct Replacement (Same Electrical Performance):
IXFP34N65X2 is the manufacturer-recommended substitute and is the preferred choice for new designs and ongoing production. This part is manufactured by IXYS, the original manufacturer of the IXFP30N60X, and belongs to the same HiPerFET™ Ultra X series family. The IXFP34N65X2 is currently in active production status, ensuring long-term supply availability. It exceeds the electrical specifications of the original part with higher voltage rating (650V vs. 600V), increased current capability (34A vs. 30A), and superior on-state resistance (105mOhm vs. 155mOhm). All parts maintain ROHS3 compliance and unlimited moisture sensitivity level (MSL 1).
For Package-Variant Equivalence:
IXFH30N60X provides identical electrical specifications to the IXFP30N60X but in a TO-247-3 package instead of TO-220-3. This part is suitable for applications where the larger TO-247 footprint and increased thermal performance are beneficial. However, this part is also classified as obsolete and should not be selected for new designs.
For Current-Limited Applications:
When the full 30A current capability is not required, FCP20N60 (onsemi), SIHP22N60AE-GE3 (Vishay Siliconix), STP28N60DM2 (STMicroelectronics), and STP28N65M2 (STMicroelectronics) provide functional alternatives. Among these, SIHP22N60AE-GE3, STP28N60DM2, and STP28N65M2 are currently in active production status. These parts maintain the 600V voltage class and TO-220-3 package configuration but operate at reduced current levels (18A to 21A). Selection among these alternatives depends on specific application current requirements and thermal management considerations.
Compliance and Certification:
All recommended substitute parts maintain ROHS3 compliance and REACH unaffected status, consistent with the original IXFP30N60X. All parts operate within the -55°C to 150°C temperature range, ensuring compatibility with existing thermal management designs.
Frequently Asked Questions (FAQ)
Q: Can IXFP34N65X2 be used as a direct drop-in replacement for IXFP30N60X?
A: IXFP34N65X2 is electrically compatible and can be used as a direct replacement in TO-220-3 package applications. The higher voltage rating (650V vs. 600V) and increased current capability (34A vs. 30A) make it suitable for the same circuit topology. The improved on-state resistance (105mOhm vs. 155mOhm) reduces power dissipation. No circuit modifications are required for substitution.
Q: What is the difference between IXFP30N60X and IXFH30N60X?
A: IXFP30N60X and IXFH30N60X have identical electrical specifications (600V, 30A, 155mOhm Rds On). The primary difference is the package type: IXFP30N60X uses TO-220-3 while IXFH30N60X uses TO-247-3. The TO-247 package provides a larger footprint and improved thermal performance. Both parts are obsolete and should not be selected for new designs.
Q: Why are some substitute parts rated for lower current (20A vs. 30A)?
A: Lower-current alternatives such as FCP20N60, SIHP22N60AE-GE3, and SPP20N65C3XKSA1 are suitable only for applications where the maximum continuous drain current does not exceed their rated specifications. These parts maintain the 600V voltage class and TO-220-3 package but are designed for lower-power applications. Selection depends on the actual current requirements of the target application.
Q: Are all substitute parts RoHS compliant?
A: Yes, all substitute parts listed in this reference are ROHS3 compliant and REACH unaffected, consistent with the original IXFP30N60X. All parts meet current environmental and regulatory requirements for electronic component manufacturing and use.
Q: What is the significance of gate charge (Qg) differences among substitute parts?
A: Gate charge affects switching speed and driver circuit requirements. The IXFP30N60X and IXFP34N65X2 both have 56nC gate charge at 10V, indicating similar switching characteristics. Lower gate charge values (31nC to 35nC in STP28N60DM2, STP28N65M2, and TSM60NB190CZ C0G) indicate faster switching but may require different gate driver specifications. Higher gate charge values (96nC to 114nC) indicate slower switching and may require more robust gate drive circuits.
Q: Can IXFP30N60X be used in new product designs?
A: No. IXFP30N60X is classified as obsolete and should not be used in new product designs. IXFP34N65X2 is the recommended substitute for new designs, as it is currently in active production status and offers superior electrical performance with the same package configuration.
Q: What are the thermal considerations when substituting these parts?
A: Power dissipation ratings vary among substitute parts. IXFP34N65X2 has a higher power dissipation rating (540W vs. 500W) than the original part, indicating improved thermal performance. Lower-current alternatives have significantly reduced power dissipation ratings (170W to 208W), reflecting their lower current capability. Thermal management design should account for the specific power dissipation rating of the selected substitute part.
Q: Are there any gate voltage (Vgs) compatibility issues among substitute parts?
A: All substitute parts maintain maximum gate voltage specifications within ±20V to ±30V, compatible with standard gate driver circuits. Gate threshold voltage (Vgs(th)) varies slightly among parts (3.9V to 5.5V), but these variations are within acceptable ranges for typical gate driver designs operating at 10V or higher drive voltages.
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