IXFP24N60X N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IXFP24N60X is an N-Channel 600V 24A MOSFET manufactured by IXYS in the HiPerFET™ Ultra X series. This device is rated for 400W power dissipation and features a TO-220-3 through-hole package. The part is classified as obsolete, necessitating identification of active equivalent and substitute components for new designs and ongoing production requirements. Substitute parts must maintain compatibility across voltage ratings, current handling, thermal characteristics, and package specifications.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	24	A
On-State Resistance (Rds On) @ 12A, 10V	175	mOhm
Gate Threshold Voltage (Vgs(th)) @ 2.5mA	4.5	V
Gate Charge (Qg) @ 10V	47	nC
Input Capacitance (Ciss) @ 25V	1910	pF
Power Dissipation (Max)	400	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitute parts for the IXFP24N60X are selected based on the following critical parameters:

Voltage Rating Compatibility: All substitutes must support a minimum Drain to Source Voltage (Vdss) of 600V. Parts rated at 650V or higher are acceptable as they provide voltage margin.

Current Handling: Continuous drain current (Id) must be within acceptable range of the original 24A specification. Substitutes rated between 17A and 24A are functionally equivalent for most applications, with lower-rated parts suitable for current-limited designs.

On-State Resistance (Rds On): This parameter directly affects power dissipation and thermal performance. Substitutes with Rds On values between 160mOhm and 190mOhm maintain comparable efficiency characteristics.

Gate Charge (Qg): Lower gate charge values reduce switching losses and improve efficiency. Substitutes with Qg between 11nC and 86nC are acceptable.

Package and Mounting: All substitutes maintain TO-220-3 through-hole packaging for direct mechanical and electrical compatibility.

Compliance and Status: Active product status ensures ongoing availability and manufacturer support. RoHS3 compliance and REACH unaffected status are maintained across all substitutes.

Parameter Comparison

Parameter	IXFP24N60X	IXFP22N65X2	IPP60R190P6XKSA1	SIHP22N60E-GE3	STP24NM60N
Manufacturer	IXYS	IXYS	Infineon Technologies	Vishay Siliconix	STMicroelectronics
Vdss (V)	600	650	600	600	600
Id @ 25°C (A)	24	22	20.2	21	17
Rds On (mOhm)	175 @ 12A	160 @ 11A	190 @ 7.6A	180 @ 11A	190 @ 8A
Vgs(th) (V)	4.5	5.5	4.5	4.0	4.0
Qg @ 10V (nC)	47	38	11	86	46
Ciss @ Vds (pF)	1910 @ 25V	2310 @ 25V	1750 @ 100V	1920 @ 100V	1400 @ 50V
Power Dissipation (W)	400	390	151	227	125
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Product Status	Obsolete	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Substitute: IXFP22N65X2

The IXFP22N65X2 is the manufacturer-recommended substitute from IXYS. This part maintains the same product family lineage (HiPerFET™ Ultra X2 series) and offers improved specifications. The 650V rating provides voltage margin above the original 600V specification. Current rating of 22A is within acceptable range for most applications. On-state resistance of 160mOhm is superior to the original 175mOhm, resulting in lower power dissipation. Gate charge of 38nC is reduced, improving switching efficiency. Active product status ensures long-term availability and manufacturer support. RoHS3 compliance and REACH unaffected status are maintained.

Secondary Substitute: SIHP22N60E-GE3

The SIHP22N60E-GE3 from Vishay Siliconix provides direct voltage and current compatibility at 600V and 21A respectively. On-state resistance of 180mOhm is comparable to the original specification. This part is actively manufactured with extensive inventory availability (18,297 units). RoHS3 compliance and REACH unaffected status are confirmed. Gate threshold voltage of 4.0V is lower than the original 4.5V, providing improved gate drive margin.

Tertiary Substitute: IPP60R190P6XKSA1

The IPP60R190P6XKSA1 from Infineon Technologies (CoolMOS™ P6 series) matches the 600V voltage rating. Continuous drain current of 20.2A is within acceptable range. This part features significantly reduced gate charge of 11nC, providing substantial switching loss reduction. However, power dissipation rating of 151W is substantially lower than the original 400W, limiting application to lower-power designs. Active product status and RoHS3 compliance are confirmed.

Quaternary Substitute: STP24NM60N

The STP24NM60N from STMicroelectronics (MDmesh™ II series) maintains 600V voltage rating. Continuous drain current of 17A represents a reduction from the original 24A specification, suitable for current-limited applications. On-state resistance of 190mOhm is comparable. Gate charge of 46nC is nearly identical to the original 47nC. Power dissipation of 125W is substantially reduced. Active product status and RoHS3 compliance are confirmed.

Frequently Asked Questions (FAQ)

Q: Can the IXFP22N65X2 directly replace the IXFP24N60X in all applications?

A: The IXFP22N65X2 is suitable for applications where continuous drain current does not exceed 22A. The 650V rating provides voltage margin. On-state resistance is improved, reducing power dissipation. Verify that thermal management and gate drive circuits are compatible with the slightly higher gate threshold voltage of 5.5V compared to the original 4.5V.

Q: What is the primary advantage of the IPP60R190P6XKSA1 substitute?

A: The IPP60R190P6XKSA1 features significantly reduced gate charge of 11nC compared to the original 47nC, resulting in lower switching losses and improved efficiency in high-frequency applications. However, the power dissipation rating of 151W is substantially lower, limiting use to designs with reduced thermal requirements.

Q: Are all substitute parts available in the same TO-220-3 package?

A: All listed substitute parts are packaged in TO-220-3 through-hole configuration, ensuring mechanical and electrical compatibility with existing PCB layouts and thermal management solutions.

Q: How does the SIHP22N60E-GE3 compare to the original IXFP24N60X?

A: The SIHP22N60E-GE3 maintains the same 600V voltage rating and provides 21A continuous drain current, slightly below the original 24A. On-state resistance of 180mOhm is comparable to the original 175mOhm. Gate threshold voltage is lower at 4.0V, providing improved gate drive margin. This part has the highest inventory availability among all substitutes.

Q: What compliance certifications are maintained across all substitute parts?

A: All substitute parts maintain RoHS3 compliance and REACH unaffected status, consistent with the original IXFP24N60X. Operating temperature range of -55°C to 150°C is preserved across all substitutes.

Q: Is the STP24NM60N suitable for applications requiring 24A continuous current?

A: The STP24NM60N is rated for 17A continuous drain current, which is below the original 24A specification. This part is suitable for applications where current requirements do not exceed 17A or where current limiting is implemented in the circuit design.

Q: How do gate charge differences affect circuit design?

A: Gate charge (Qg) determines the energy required to switch the MOSFET. The IPP60R190P6XKSA1 features 11nC (lowest), while the SIHP22N60E-GE3 features 86nC (highest). Lower gate charge reduces switching losses and allows faster switching speeds. Gate drive circuits must supply sufficient current to charge the gate within the required switching time.

Q: Can substitute parts be mixed in parallel configurations?

A: Parallel operation of different MOSFET types is not recommended due to differences in on-state resistance, gate threshold voltage, and thermal characteristics. If parallel operation is required, use identical part numbers to ensure matched electrical behavior.

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