IXFP220N06T3 N-Channel 60V 220A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFP220N06T3 is an N-Channel power MOSFET manufactured by IXYS, rated for 60V drain-source voltage and 220A continuous drain current at 25°C. This device features the HiperFET™ and TrenchT3™ technology series and is housed in a TO-220-3 through-hole package. The part carries a Last Time Buy product status, indicating discontinued production. Identification of equivalent and substitute parts is necessary to ensure design continuity and procurement availability for applications requiring comparable electrical and thermal performance characteristics.

Key Parameters

Parameter	Value	Unit
Drain-Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	220	A
On-State Resistance (Rds On) @ 100A, 10V	4	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	136	nC
Input Capacitance (Ciss) @ 25V	8500	pF
Power Dissipation (Max)	440	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-220-3	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitution eligibility for the IXFP220N06T3 is determined by the following critical parameters:

Primary Substitution Criteria:

Drain-Source Voltage (Vdss): Must equal or exceed 60V
Continuous Drain Current (Id): Must equal or exceed 220A at 25°C
On-State Resistance (Rds On): Must not exceed 4mOhm at rated conditions
Gate Threshold Voltage (Vgs(th)): Must be compatible within ±20V gate voltage range
Package Type: TO-220-3 or mechanically equivalent through-hole packages
Operating Temperature: Must support -55°C to 175°C range
Technology: N-Channel MOSFET (Metal Oxide)

Parametric Equivalent Classification: Parts meeting all primary criteria with identical electrical performance are classified as parametric equivalents. The IXFH220N06T3 qualifies as a parametric equivalent despite package variation (TO-247 vs. TO-220-3), as it maintains identical electrical specifications.

Similar Part Classification: Parts with reduced drain current capacity, increased on-state resistance, or higher drain-source voltage ratings are classified as similar parts. These may be suitable for applications with lower current demands or higher voltage margins but do not provide direct one-to-one substitution.

Parameter Comparison

Manufacturer Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg @ 10V (nC)	Ciss @ Vds (pF)	Pd Max (W)	Package	Product Status
IXFP220N06T3	IXYS	60	220	4	136	8500	440	TO-220-3	Last Time Buy
IXFH220N06T3	IXYS	60	220	4	136	8500	440	TO-247-3	Last Time Buy
CSD18532KCS	Texas Instruments	60	100	4.2	53	4680	250	TO-220-3	Active
IPP040N06N3GXKSA1	Infineon Technologies	60	90	4	98	11000	188	TO-220-3	Not For New Designs
IRFB3207PBF	Infineon Technologies	75	170	4.5	260	7600	330	TO-220-3	Active
IRFB3207ZPBF	Infineon Technologies	75	120	4.1	170	6920	300	TO-220-3	Active
IRFB3306PBF	Infineon Technologies	60	120	4.2	120	4520	230	TO-220-3	Active
PSMN3R9-60PSQ	Nexperia USA Inc.	60	130	3.9	103	5600	263	TO-220-3	Obsolete
TSM190N08CZ C0G	Taiwan Semiconductor Corporation	75	190	4.2	160	8600	250	TO-220-3	Not For New Designs

Engineering Selection Recommendations

Parametric Equivalent Selection:

The IXFH220N06T3 is the only parametric equivalent to the IXFP220N06T3. Both parts maintain identical electrical specifications (60V, 220A, 4mOhm Rds On, 440W power dissipation). The primary difference is package format: IXFH220N06T3 uses TO-247-3 instead of TO-220-3. Both parts carry Last Time Buy status and ROHS3 compliance. Selection between these two depends on PCB layout requirements and thermal management design. The TO-247 package provides superior thermal performance due to increased copper contact area.

Active Product Alternatives:

For applications where Last Time Buy status presents supply chain risk, the following active products offer comparable performance within specified constraints:

IRFB3207PBF (Infineon Technologies, Active status) provides 75V rating with 170A continuous current. This part accommodates higher voltage margins while delivering 330W power dissipation. Gate charge increases to 260nC, requiring adjusted gate drive timing. Suitable for designs with voltage headroom requirements.

IRFB3306PBF (Infineon Technologies, Active status) maintains 60V rating with 120A continuous current. This part operates within identical voltage specifications but with reduced current capacity. Power dissipation is 230W. On-state resistance is 4.2mOhm at 75A, 10V. Applicable to lower-current applications within the 60V envelope.

Reduced-Current Alternatives:

CSD18532KCS (Texas Instruments, Active status) provides 60V, 100A performance in TO-220-3 package. Power dissipation is 250W with 4.2mOhm Rds On. Gate charge is significantly lower at 53nC, reducing gate drive power requirements. Suitable for applications with current demands below 100A.

Compliance and Regulatory Status:

All listed parts maintain ROHS3 compliance and REACH Unaffected status. Moisture Sensitivity Level is 1 (Unlimited) for IXYS and Infineon parts. Texas Instruments CSD18532KCS carries Not Applicable MSL designation. All parts are classified under ECCN EAR99 and HTSUS 8541.29.0095.

Frequently Asked Questions (FAQ)

Q: Can IXFH220N06T3 (TO-247) directly replace IXFP220N06T3 (TO-220-3) on existing PCBs?

A: IXFH220N06T3 provides identical electrical performance but requires PCB layout modification. TO-247 and TO-220-3 packages have different pin configurations and mounting footprints. Mechanical redesign of the PCB is necessary. Thermal performance may improve due to TO-247's larger copper contact area.

Q: Is CSD18532KCS suitable as a substitute for high-current applications?

A: No. CSD18532KCS is rated for 100A continuous current, which is 55% below the IXFP220N06T3 specification of 220A. This part is suitable only for applications with maximum current demands of 100A at 25°C. Exceeding this rating will cause thermal runaway and device failure.

Q: What is the significance of Last Time Buy status for IXFP220N06T3 and IXFH220N06T3?

A: Last Time Buy status indicates IXYS has discontinued production and will not accept new orders after a specified date. Existing inventory is available but will not be replenished. Long-term designs should transition to active products such as IRFB3306PBF or IRFB3207PBF to ensure supply continuity.

Q: Why does IRFB3207PBF have higher gate charge (260nC) compared to IXFP220N06T3 (136nC)?

A: Gate charge correlates with input capacitance and switching speed. IRFB3207PBF's higher gate charge reflects its 75V rating and different internal structure. Gate drive circuits must supply sufficient current to charge the gate within acceptable switching times. Verify gate driver specifications before substitution.

Q: Can parts with higher Vdss ratings (75V) be used in 60V applications?

A: Yes. Higher voltage ratings provide design margin and do not compromise performance in lower-voltage applications. IRFB3207PBF (75V) and TSM190N08CZ (75V) operate safely in 60V circuits. However, on-state resistance and gate charge characteristics differ, requiring circuit validation.

Q: What is the impact of on-state resistance variation between substitute parts?

A: On-state resistance directly affects power dissipation and heat generation. PSMN3R9-60PSQ (3.9mOhm) dissipates less heat than IXFP220N06T3 (4mOhm) at identical current levels. Conversely, CSD18532KCS (4.2mOhm) generates slightly more heat. Thermal design calculations must account for these variations to maintain junction temperature within -55°C to 175°C operating range.

Q: Are Obsolete and Not For New Designs parts acceptable for production designs?

A: Obsolete parts (PSMN3R9-60PSQ) and Not For New Designs parts (IPP040N06N3GXKSA1, TSM190N08CZ) should not be selected for new production designs. These designations indicate manufacturer commitment to discontinuation. Use only Active status parts (IRFB3306PBF, IRFB3207PBF, CSD18532KCS) for designs requiring long-term supply assurance.

Q: How do input capacitance differences affect circuit performance?

A: Input capacitance (Ciss) influences gate charge requirements and switching speed. IXFP220N06T3 has 8500pF at 25V. CSD18532KCS has 4680pF, requiring less gate charge (53nC vs. 136nC). Lower capacitance enables faster switching but may increase EMI. Circuit design must account for these differences in gate drive timing and filtering.

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