IXFP20N85X N-Channel 850V 20A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFP20N85X is an N-Channel MOSFET manufactured by IXYS, part of the HiPerFET™ Ultra X series. This device is rated for 850V drain-to-source voltage with 20A continuous drain current and 540W maximum power dissipation. The component is housed in a TO-220-3 through-hole package and is currently in active production status with 25,050 units in stock.

Substitute parts are identified when electrical parameters and functional specifications remain identical while packaging or mechanical form factors differ. This allows for design flexibility in applications where alternative mounting configurations are acceptable.

Substiute Parts

IXFP20N85X
IXYSIn Stock: 25077IXFP20N85X Datasheet
IXFP20N85X
Current Part
IXFH20N85X
IXYSIn Stock: 1744IXFH20N85X Datasheet
IXFH20N85X
Parametric Equivalent

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 850 V
Continuous Drain Current (Id) @ 25°C 20 A
On-State Resistance (Rds On Max) @ 500mA, 10V 330 mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 2.5mA 5.5 V
Gate Charge (Qg Max) @ 10V 63 nC
Input Capacitance (Ciss Max) @ 25V 1660 pF
Maximum Gate Voltage (Vgs Max) ±30 V
Power Dissipation (Max) 540 W
Operating Temperature Range -55 to 150 °C
Mounting Type Through Hole

Substitute Part Grouping Explanation

Substitution of the IXFP20N85X is determined by electrical parameter equivalence across the following critical specifications:

  • Drain-to-source voltage rating (Vdss): 850V
  • Continuous drain current (Id): 20A at 25°C
  • On-state resistance (Rds On): 330 mOhm maximum at specified conditions
  • Gate threshold voltage (Vgs(th)): 5.5V maximum
  • Gate charge (Qg): 63 nC maximum
  • Input capacitance (Ciss): 1660 pF maximum
  • Maximum gate voltage (Vgs): ±30V
  • Power dissipation capability: 540W
  • Operating temperature range: -55°C to 150°C
  • Technology: N-Channel MOSFET (Metal Oxide)
  • Series: HiPerFET™ Ultra X
  • Compliance: ROHS3, REACH Unaffected

The IXFH20N85X qualifies as a parametric equivalent because all electrical characteristics remain identical. The primary difference is the package configuration: IXFH20N85X uses TO-247-3 (IXTH) instead of TO-220-3. Both are through-hole mounting types suitable for high-power applications.

Parameter Comparison

Parameter IXFP20N85X (TO-220-3) IXFH20N85X (TO-247-3) Match
Manufacturer IXYS IXYS Yes
FET Type N-Channel N-Channel Yes
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) Yes
Series HiPerFET™ Ultra X HiPerFET™ Ultra X Yes
Vdss 850V 850V Yes
Id @ 25°C 20A 20A Yes
Rds On (Max) @ 500mA, 10V 330 mOhm 330 mOhm Yes
Vgs(th) (Max) @ 2.5mA 5.5V 5.5V Yes
Qg (Max) @ 10V 63 nC 63 nC Yes
Ciss (Max) @ 25V 1660 pF 1660 pF Yes
Vgs (Max) ±30V ±30V Yes
Power Dissipation (Max) 540W 540W Yes
Operating Temperature -55°C to 150°C -55°C to 150°C Yes
Mounting Type Through Hole Through Hole Yes
Package / Case TO-220-3 TO-247-3 Different
RoHS Status ROHS3 Compliant ROHS3 Compliant Yes
REACH Status REACH Unaffected REACH Unaffected Yes
MSL 1 (Unlimited) 1 (Unlimited) Yes

Engineering Selection Recommendations

Both the IXFP20N85X and IXFH20N85X are active production components with identical electrical specifications and full compliance certifications (ROHS3 Compliant, REACH Unaffected). Selection between these parts is determined by PCB layout and mechanical mounting requirements.

IXFP20N85X (TO-220-3): Select this package for standard through-hole applications with conventional PCB mounting. This variant has higher inventory availability (25,050 units in stock).

IXFH20N85X (TO-247-3): Select this package when TO-247 footprint compatibility is required or when the larger lead frame geometry is preferred for thermal management in specific circuit designs. Current inventory is 1,663 units.

Both devices maintain identical electrical performance, thermal characteristics, and regulatory compliance. Package selection does not affect functional behavior or electrical parameters.

Frequently Asked Questions (FAQ)

Q: Can IXFH20N85X replace IXFP20N85X in an existing design?

A: Electrical replacement is direct due to identical specifications. However, PCB layout modification is required because the TO-247-3 package has a different footprint than TO-220-3. Verify PCB pad spacing and mounting hole positions before substitution.

Q: Are the electrical characteristics identical between these two parts?

A: Yes. Drain-to-source voltage, continuous drain current, on-state resistance, gate charge, input capacitance, power dissipation, and operating temperature range are identical across both devices.

Q: What is the primary difference between IXFP20N85X and IXFH20N85X?

A: The primary difference is the package configuration. IXFP20N85X uses TO-220-3 (standard three-lead through-hole package), while IXFH20N85X uses TO-247-3 (IXTH variant, larger through-hole package). Both are through-hole mounting types.

Q: Do both parts have the same thermal performance?

A: Both devices are rated for 540W maximum power dissipation and operate across -55°C to 150°C. Thermal performance depends on PCB layout, heatsink design, and mounting configuration rather than the package type alone.

Q: Are there any compliance differences between these parts?

A: No. Both IXFP20N85X and IXFH20N85X are ROHS3 Compliant, REACH Unaffected, and carry MSL 1 (Unlimited) moisture sensitivity rating.

Q: Which part should be selected for new designs?

A: Selection is based on PCB layout requirements and mechanical constraints. Both parts are active production components. Verify package footprint compatibility with your circuit board design before component selection.

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